Abstract: The present invention relates to a method for determining a truncation diagram for a pluri-Gaussin geological parameter estimation associated with a zone of a real subsoil. The method comprises receiving an auxiliary variable describing the zone, computing a normalized variable based on the auxiliary variable and determining a weighted probability map for the normalized variable, each point of the weighted probability map being in correspondence with a point, of the truncation diagram. Moreover for each point of the truncation diagram, the method further comprises determining an associated geological parameter based on the probability value of each point of the weighted probability map. The method is also used to adapt truncation diagram to global or local target, proportions of the facies model to built.

Abstract: Provided are methods and systems for treating shunts on solar cell substrates. Also provided are solar cells including such substrates. A shunt detected on a substrate proximate to a metallized grid pattern is electrically disconnected from at least the bus portion of the grid, which reduces shunt's impact on performance on the solar cell. An antireflective layer may be disposed between the shunt and a portion of the grid extending over the shunt. The exposure pattern of a photoresist used to form the antireflective layer may be adjusted accordingly to achieve this result. In some embodiments, the metallized grid may be modified by adjusting the exposure pattern of a photoresist used to form this grid. The grid may be modified to avoid any contact between the grid and the shunt or to disconnect a portion of the grid contacting the shunt from the bus portion area of the grid.

Abstract: Provided are methods and systems for treating shunts on solar cell substrates. Also provided are solar cells including such substrates. A shunt detected on a substrate proximate to a metallized grid pattern is electrically disconnected from at least the bus portion of the grid, which reduces shunt's impact on performance on the solar cell. An antireflective layer may be disposed between the shunt and a portion of the grid extending over the shunt. The exposure pattern of a photoresist used to form the antireflective layer may be adjusted accordingly to achieve this result. In some embodiments, the metallized grid may be modified by adjusting the exposure pattern of a photoresist used to form this grid. The grid may be modified to avoid any contact between the grid and the shunt or to disconnect a portion of the grid contacting the shunt from the bus portion area of the grid.

Abstract: A method of estimating lithologic properties of a geological zone represented by a grid, in which method facies are allocated to the nodes of the grid by sequential stochastic simulation. For a target node (x0) from a set of target nodes for scanning iteratively, and for each possible facies (ck0), a conditional probability (pk0/k1, . . . , kn) of observing said facies is estimated knowing that respective facies have already been allocated to other nodes in the neighborhood. A random draw weighted by these conditional probabilities is then performed. The estimation of the conditional probabilities makes use of univariate probabilities (pk0) and of bivariate probabilities (pk0,ki) of observing two facies at two respective nodes of the grid. Each bivariate probability used in estimating the conditional probability relates to the target node (x0) and to a node (xi) neighboring the target node.

Abstract: A solar cell assembly including a semiconductor wafer having a solar cell portion and a wing portion, wherein the wing portion is electrically isolated from the solar cell portion, and an electrical contact material positioned on the solar cell portion, wherein the wing portion is substantially free of the electrical contact material.

Abstract: A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum.

Abstract: A method of estimating lithologic properties of a geological zone represented by a grid, in which method facies are allocated to the nodes of the grid by sequential stochastic simulation. For a target node (x0) from a set of target nodes for scanning iteratively, and for each possible facies (ck0), a conditional probability (pk0/k1, . . . , kn) of observing said facies is estimated knowing that respective facies have already been allocated to other nodes in the neighborhood. A random draw weighted by these conditional probabilities is then performed. The estimation of the conditional probabilities makes use of univariate probabilities (pk0) and of bivariate probabilities (pk0,ki) of observing two facies at two respective nodes of the grid. Each bivariate probability used in estimating the conditional probability relates to the target node (x0) and to a node (xi) neighboring the target node.

Abstract: A seal arrangement provided between a static component and a rotating component arranged for rotation about a rotational axis. The arrangement preferably takes the form of an interstage seal for a gas turbine engine, including: first and second seal members carried by respective said components and arranged concentrically about said rotational axis. The first seal member has a plurality of radially directed seal fins extending towards the second member and a substantially radially directed flow outlet configured to direct a flow of cooling air through the first member. In one aspect of the invention, the second member has a radial projection at one end of its axial length, the projection extending towards the first member at a position spaced axially between the flow outlet and said seal fins. In another aspect of the invention, the flow outlet is axially adjacent a seal fin which is configured so as to be generally concave towards the flow outlet.

Abstract: A semiconductor device having at least one layer of a group III–V semiconductor material epitaxially deposited on a group III–V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III–V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.

Abstract: A solar cell includes a photovoltaic energy source, a frontside array of metallic gridlines deposited upon a front face of the photovoltaic energy source, and a busbar structure in electrical continuity with the frontside array of metallic gridlines. The busbar structure has an electrical insulator layer overlying and contacting the front face of the photovoltaic energy source, and a metallic busbar layer overlying and contacting the electrical insulator layer. The metallic busbar layer is in electrical continuity with the frontside array of metallic gridlines. The solar cell is preferably a concentrator solar cell.

Abstract: A latch for the pivoting head arm of a data-storage magnetic disc machine, in which a U-shaped latching member is arranged to avoid malfunctioning to block the movement of the arm, and may be operated entirely by means of a toggle spring, or entirely by means of a magnetic arrangement or cooperatively with both.