Abstract: A data storage device includes a memory and a controller and may perform a method that includes updating, in the controller, a value of a particular counter of a set of counters in response to an erase operation to a particular region of the non-volatile memory that is tracked by the particular counter. The method includes, in response to the value of the particular counter indicating that a count of erase operations to the particular region satisfies a first threshold, initiating a remedial action to the particular region of the non-volatile memory.

Abstract: A method includes decreasing a programming step size from a first value to a second value for a block of a memory device. The programming step size is decreased at least partially based on determining that an error count corresponding to the block satisfies a threshold.

Abstract: An apparatus includes a semiconductor device that includes a multi-ported three-dimensional (3D) memory. The multi-ported 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells.

Abstract: An apparatus includes a semiconductor device that includes a three-dimensional (3D) memory. The 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The 3D memory includes circuitry associated with operation of the multiple memory cells and includes a serializer/deserializer interface.

Abstract: An apparatus includes a first semiconductor device including a three-dimensional (3D) memory. The 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The 3D memory further includes circuitry associated with operation of the multiple memory cells. The apparatus includes a second semiconductor device coupled to the first semiconductor device. The second semiconductor device includes a charge pump, and the 3D memory does not include a charge pump.

Abstract: An apparatus includes a semiconductor device including a three-dimensional (3D) memory. The 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The 3D memory includes circuitry associated with operation of the multiple memory cells and includes a differential signaling interface.

Abstract: A method includes determining a programming step size for a word line of a memory in a data storage device. The programming step size is determined at least partially based on a count of memory elements of the word line to be programmed to a particular state.

Abstract: A method includes decreasing a programming step size from a first value to a second value for a block of a memory device. The programming step size is decreased at least partially based on determining that an error count corresponding to the block satisfies a threshold.

Abstract: A method includes determining a programming step size for a word line of a memory in a data storage device. The programming step size is determined at least partially based on a count of memory elements of the word line to be programmed to a particular state.

Abstract: An apparatus includes a first semiconductor device including a NAND flash memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the NAND flash memory core.

Abstract: An apparatus includes a first memory die including a first memory core, a second memory die including a second memory core, and a periphery die coupled to the first memory die and to the second memory die. The periphery die includes periphery circuitry corresponding to the first memory core and periphery circuitry corresponding to the second memory core. The periphery die is responsive to a memory controller and configured to initiate a first memory operation at the first memory core and a second memory operation at the second memory core.

Abstract: An apparatus includes a first semiconductor device including a memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the memory core. The second semiconductor device includes a second serializer/deserializer communication interface coupled to a first serializer/deserializer communication interface of a memory controller.

Abstract: A clock detection and selection circuit (100) can include a first counter (102-0) that generates a first count value CNT1 according to a first clock signal CLK1 and a second counter (102-1) that generates a second count value CNT2 according to a second clock signal CLK2. First separation-detect logic (102-0) and second separation-detect logic (102-1) determine if a pre-specified difference exists between a first count value (CNT1/CNT1?) and second count value (CNT2/CNT2?). According to such determinations, separation information (INF—1 and INF—2) can be generated indicating which clock signal (CLK1 or CLK2) is faster. Selection logic (106) can select a faster of the clock signals (CLK1 or CLK2) if the separation information values confirm one another.

Abstract: An arbiter circuit (100) can include a latch (106) that latches competing input signals (Req_A and Req_B) to generate latch output signals (latn1 and latn2). A filter section (108) can prevent metastable states of latch output signals (latn1 and latn2) from propagating through to output signals (Sel_A and Sel_B). If both input signals (Req_A and Req_B) are activated, a feedback circuit (110) can activate a feedback signal (fb) after a predetermined delay (?), provided both output signals (Sel_A and Sel_B) remain inactive.

Abstract: Memory address decoder circuitry including a decoder for activating a corresponding memory access control conductor in response to registered address bits. An address register stores received address bits for presentation to the inputs of the decoder and includes reset circuitry for resetting the outputs of the address register to an inactive state during an inactive time period to reduce transition glitches in the decoder during latching in a subsequent active period.

Abstract: A signal generator generates an output signal with a programmable duty cycle and includes a first buffer which generates in response to an input signal an intermediate signal having a selected edge with a voltage slope selected to vary a length of a selected phase of the output signal. A second buffer having a selected input voltage threshold generates the output signal in response to the intermediate signal.

Abstract: A signal generator generates an output signal with a programmable duty cycle and includes a first buffer which generates in response to an input signal an intermediate signal having a selected edge with a voltage slope selected to vary a length of a selected phase of the output signal. A second buffer having a selected input voltage threshold generates the output signal in response to the intermediate signal.

Abstract: A stress test circuit and method for static random access memory (“SRAM”) cells of an SRAM device are disclosed. The stress test component has a resistance element and a switch component to electrically couple the resistance element between a bit line and complementary bit line of an SRAM cell storing a digital value. Stress test component is activated to electrically couple the resistance element to the bit line and complementary bit line. An electrical path is created causing a voltage on an SRAM circuit path maintaining the digital value to be pulled in one direction by a stress current. The electrical path causes another voltage on another SRAM circuit path maintaining a complementary digital value to be pulled in an opposite direction by the stress current. The SRAM cell is then read to determine whether the digital value has changed state.

Abstract: A clock generation circuit which includes a first circuit for generating first and second trains of non-overlapping and opposite phase clock pulses from an input train of clock pulses, and second and third circuits each for generating a pair of non-overlapping and opposite phase trains of clock pulses from one of the first or second trains of opposite phase clock pulses provided by the first circuit.

Abstract: A regulation circuit which includes circuitry for furnishing a reference voltage, a voltage divider for furnishing a voltage provided by a charge pump circuit, a comparator for comparing the output of the charge pump circuit with the reference voltage, and apparatus for operating the charge pump when the voltage drops below the reference level and for interrupting operation of the charge pump when the voltage produced by the charge pump becomes greater than the reference voltage.