Abstract: A method is provided for forming metal layers in semiconductor channels or vias by using a very high pressure ionized metal deposition technique which results in improved sidewall step coverage with enhanced subsequent filling of the channel or vias by conductive materials. To obtain the very high pressure in excess of 100 mT, the plasma coil power is increased and the gas flow is increased while maintaining a constant pumping feed in the ionized metal deposition equipment.

Abstract: Reliable copper or copper alloy interconnection patterns are formed by forming a protective barrier layer lining a via or contact hole exposing an underlying conductive feature. Embodiments include forming a barrier layer on the insulating layer lining the side surfaces and on the exposed nitride layer before exposing a portion of the underlying conductive feature. The barrier layer prevents copper from depositing on the sidewalls of the dielectric interlayer and diffusing through the ILD.

Abstract: Copper or copper alloy interconnection patterns are formed with improved barrier layer protection against copper diffusion. A damascene opening is formed in a dielectric layer and a barrier layer is deposited lining the damascene opening and on the dielectric layer. Embodiments include forming a nitride barrier layer with a plasma generated in a chamber containing a shutter which prevents sputtered atoms from impinging on the dielectric layer. The shutter is then opened to allow a metal layer, e.g., Al, Mg or an alloy thereof, to be sputter deposited on the nitride layer in the chamber. Copper or a copper alloy is then deposited to fill the opening, as by electroplating or electroless plating.

Abstract: Copper interconnects with enhanced electromigration are formed by filling a via/contact hole and/or trench in a dielectric layer with undoped Cu. A Cu layer containing a dopant element, such as Pd, Zr or Sn is deposited on the undoped Cu contact/via and/or line. Annealing is then conducted to diffuse the dopant element into the copper contact/via and/or line to improve its electromigration resistance. CMP is then performed.