Abstract: Disclosed is an apparatus for transporting containers, having a movable carrier on which a plurality of gripping devices for gripping containers are arranged, wherein these gripping devices being designed as gripping clamps, and these clamps each having at least two clamp arms which can be moved between a first position, in which they grip the containers to be transported, and a second position, wherein the gripping clamps having contact portions which are suitable and intended to contact the containers, and wherein furthermore an actuating mechanism is provided which is suitable for transferring the gripping means between the first position and the second position, characterized in that this actuating mechanism comprises at least one roller element which is arranged on at least one of the clamp arms and can be rotated with respect to this clamp arm and with respect to a predetermined axis of rotation.

Abstract: A method for maintaining a projection exposure apparatus comprising at least two modules and a reference element, wherein the modules are referenced to the reference element, comprises: removing a module; attaching a service module to or in the vicinity of the projection exposure apparatus; referencing the service module to the reference element of the projection exposure apparatus; and implementing a maintenance measure with the aid of the service module.

Abstract: A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

Abstract: The present disclosure provides pharmaceutical compositions comprising mometasone and diisopropyl adipate (DIPA) for topical administration. These compositions can be formulated as creams, lotions, and foams, and are particularly suitable for administration in hairy skin; for example, for treating inflammatory skin conditions, such as dermatitis, eczema, and psoriasis.

Abstract: The present invention is directed to stretched filaments based on fluoropolymers, where the filaments were stretched at a temperature between 70° C. and the Vicat temperature and where the filaments are cooled under full tensile load to room temperature.

Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

Abstract: Stretched filaments based on linear, branched or cyclic, aliphatic or semiaromatic polyamides, wherein the filaments have been stretched at a temperature between glass transition temperature and melting point and wherein the filaments are cooled down to room temperature under full tensile load.

Abstract: Stretched filaments based on aromatic polyethers, wherein the filaments have been stretched at a temperature between glass transition temperature and melting point and wherein the filaments are cooled down to below the glass transition temperature under full tensile load and a process for production thereof and use thereof.

Abstract: A connection adapter for producing a detachable fluid connection between a first fluid system and a second fluid system is provided, the connection adapter comprising a switching valve; a housing including a pressure chamber and a valve chamber fluidly connected; an actuation element to actuate the switching valve to selectively open and close the fluidic connection; a ventilation path leading out of the connection adapter from the valve chamber; a ventilation shut-off means to close and open the ventilation path; a connection element fluidly connecting the pressure chamber to the first fluid system; a quick fastener socket fluidly connecting to the valve chamber and connects the valve chamber to a connection element of the second flush system; and a locking mechanism to lock the quick fastener socket and is restricted to a locked position when the ventilation shut-off means closes off the ventilation path.

Abstract: An optical assembly includes an optical element (13), configured in particular for the reflection of EUV radiation (4), and a protective element (30) for protecting a surface (31) of the optical element (13, 14) from contaminating substances (P). The protective element (30) has a membrane (33a-c) and a frame (34) on which the membrane (33a-c) is mounted. The membrane is formed by a plurality of membrane segments (33a, 33b, 33c) which respectively protect a partial region (T) of the surface (31) of the optical element (13) from the contaminating substances (P). The optical assembly can form part of an overall optical arrangement, for example an EUV lithography system.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: In a method for characterizing at least one optical component of a projection exposure apparatus (1), an intensity distribution of the illumination radiation (2) is detected in a field plane of the projection exposure apparatus (1) with a measuring device (31) and predicted values of an optical parameter are spatially determined therefrom over at least one predefined surface.

Abstract: An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: A connection adapter for producing a detachable fluid connection between a first fluid system and a second fluid system is provided, the connection adapter comprising a switching valve; a housing including a pressure chamber and a valve chamber fluidly connected; an actuation element to actuate the switching valve to selectively open and close the fluidic connection; a ventilation path leading out of the connection adapter from the valve chamber; a ventilation shut-off means to close and open the ventilation path; a connection element fluidly connecting the pressure chamber to the first fluid system; a quick fastener socket fluidly connecting to the valve chamber and connects the valve chamber to a connection element of the second flush system; and a locking mechanism to lock the quick fastener socket and is restricted to a locked position when the ventilation shut-off means closes off the ventilation path.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

Abstract: An optical assembly includes an optical element (13), configured in particular for the reflection of EUV radiation (4), and a protective element (30) for protecting a surface (31) of the optical element (13, 14) from contaminating substances (P). The protective element (30) has a membrane (33a-c) and a frame (34) on which the membrane (33a-c) is mounted. The membrane is formed by a plurality of membrane segments (33a, 33b, 33c) which respectively protect a partial region (T) of the surface (31) of the optical element (13) from the contaminating substances (P). The optical assembly can form part of an overall optical arrangement, for example an EUV lithography system.