Abstract: An optical assembly includes an optical element (13), configured in particular for the reflection of EUV radiation (4), and a protective element (30) for protecting a surface (31) of the optical element (13, 14) from contaminating substances (P). The protective element (30) has a membrane (33a-c) and a frame (34) on which the membrane (33a-c) is mounted. The membrane is formed by a plurality of membrane segments (33a, 33b, 33c) which respectively protect a partial region (T) of the surface (31) of the optical element (13) from the contaminating substances (P). The optical assembly can form part of an overall optical arrangement, for example an EUV lithography system.

Abstract: A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (101), a reflection layer system (110) and a defect structure (120) of channel-shaped defects (121) which extend inward from the optical effective surface (100a), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects (121) increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system (110) by at least 20%, in comparison to a similar layer construction without these channel-shaped defects.

Abstract: In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.

Abstract: A method for producing a capping layer (18) composed of silicon oxide SiOx on a coating (16) of a mirror (13), the coating reflecting EUV radiation (6) e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer (18) composed of silicon nitride SiNx or composed of silicon oxynitride SiNxOy for converting the silicon nitride SiNx or the silicon oxynitride SiNxOy of the capping layer (18) into silicon oxide SiOx. An associated mirror (13) includes a capping layer comprised of silicon oxide SiOX, and can be provided in an associated EUV lithography apparatus.

Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

Abstract: A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (101), a reflection layer system (110) and a defect structure (120) of channel-shaped defects (121) which extend inward from the optical effective surface (100a), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects (121) increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system (110) by at least 20%, in comparison to a similar layer construction without these channel-shaped defects.

Abstract: An optical assembly including: a beam generating system generating radiation (6) at an operating wavelength, an optical element (13, 14) arranged in a residual gas atmosphere (16) and subjected to the radiation, which induces a degradation of a surface of the optical element, and a feed device feeding at least one gaseous constituent into the residual gas atmosphere, to suppress the degradation of the surface. Either a beam diameter (d) of the radiation at the surface of the optical element, lies above a threshold value (dc), thereby suppressing the degradation by the gaseous constituent, or, if the beam diameter (d) at the surface (14a) of the optical element (14) lies below the threshold value (dc) so that the effectiveness of the suppression of the degradation is reduced, at least one further device (25, 27) enhancing suppression of the degradation of the surface (14a) is assigned to the optical element (14).

Abstract: A minor reflecting radiation with an operating wavelength of 5-30 nm, includes a substrate and a reflective coating. The reflective coating includes a first group of layers (19) and a second group (5) of layers, such that the second group of layers is arranged between the substrate and the first group of layers. The first group and the second group of layers comprise a plurality of first and second layers (9, 11). The first layers have a refractive index for radiation having the operating wavelength which is greater than a refractive index of the second layers for radiation having the operating wavelength. A correction layer (13) has a layer thickness variation for correcting the surface form of the minor and is arranged between the second group and the first group of layers. The correction layer contains carbon, sulfur, phosphorus, fluorine or organic compounds thereof, and inorganic metal compounds.

Abstract: An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).

Abstract: An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).

Abstract: A method for correcting a surface form of a mirror (1) for reflecting radiation in the wavelength range of 5-30 nm, which includes: applying a correction layer (13) having a layer thickness variation (21) for correcting the mirror's surface form, and applying a first group (19) of layers to the correction layer. The first group (19) of layers includes first (9) and second (11) layers arranged alternately one above another, wherein the first layers have a refractive index at the operating wavelength which is greater than the refractive index of the second layers for that radiation. The correction layer (13) is applied by: introducing the mirror into an atmosphere including a reaction gas (15), applying a correction radiation (17) having a location-dependent radiation energy density, such that a correction layer having a location-dependent layer thickness variation (21) grows on the mirror's irradiated surface.

Abstract: An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a).

Abstract: A mirror (1) for a microlithography projection exposure apparatus including a substrate (3) and a reflective coating (5). A functional coating (11) between the substrate (3) and the reflective coating (5) has a local form variation (19) for correcting the surface form of the mirror (1), wherein the local form variation (19) is brought about by a local variation in the chemical composition of the functional coating (11) and wherein a thickness of the reflective coating (5) is not changed by the local variation in the chemical composition of the functional coating (11). The local variation in the chemical composition of the functional coating (11) can be brought about by bombardment with particles (15), for example with hydrogen ions.

Abstract: A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: An optical arrangement, in particular in a projection exposure apparatus for EUV lithography. In an aspect an optical arrangement has a housing (100, 200, 550, 780) in which at least one optical element is arranged, and at least one subhousing (140, 240, 560, 790, 811, 823, 824, 831, 841) which is arranged within the housing and which surrounds at least one beam incident on the optical element in operation of the optical system, wherein the internal space of the subhousing is in communication with the external space of the subhousing by way of at least one opening, wherein provided in the region of the opening is at least one flow guide portion which deflects a flushing gas flow passing through the opening from the internal space to the external space of the subhousing, at least once in its direction.

Abstract: The present invention relates to a topical pharmaceutical composition comprising, based on the total weight of the composition: a) from 1.5 wt. % to 5 wt. % of terbinafine or any pharmaceutically acceptable salt thereof; b) from 15 wt. % to 35 wt. % of urea; and c) more than 25 wt. % of water.

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract: An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Abstract: A lithographic apparatus includes a projection system constructed and arranged to project a beam of radiation onto a target portion of a substrate, an internal sensor having a sensing surface, and a mini-reactor movable with respect to the sensor. The mini-reactor includes an inlet for a hydrogen containing gas, a hydrogen radical generator, and an outlet for a hydrogen radical containing gas. The mini-reactor is constructed and arranged to create a local mini-environment comprising hydrogen radicals to treat the sensing surface.