Abstract: Disclosed herein are staged oscillators for neural computing, as well as related methods and assemblies. In some embodiments, neural computing circuitry may include a first oscillator set, a second oscillator set, and an averaging structure coupled between the first oscillator set and the second oscillator set.

Abstract: Disclosed herein are neural computing dies with stacked neural core regions as well as related methods and assemblies. In some embodiments, a neural computing die may include: a first neural core region; a second neural core region; and an inter-core interconnect region in a volume between the first neural core region and the second neural core region, wherein the inter-core interconnect region includes a conductive pathway between the first neural core region and the second neural core region, and the conductive pathway includes a conductive via.

Abstract: Systems and methods for precision writing of weight values to a memory capable of storing multiple levels in each cell are disclosed. Embodiments include logic to compare an electrical parameter read from a memory cell with a base reference and an interval reference, and stop writing once the electrical parameter is between the base reference and the base plus the interval reference. The interval may be determined using a greater number of levels than the number of stored levels, to prevent possible overlap of read values of the electrical parameter due to memory device variations.

Abstract: Embodiments may relate to a system to be used in an oscillating neural network (ONN). The system may include a control node and a plurality of nodes wirelessly communicatively coupled with a control node. A node of the plurality of nodes may be configured to identify an oscillation frequency of the node based on a weight W and an input X. The node may further be configured to transmit a wireless signal to the control node, wherein a frequency of the wireless signal oscillates based on the identified oscillation frequency. Other embodiments may be described or claimed.

Abstract: Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; and a third spin channel region adjacent to the 4-state output magnet. Described in an apparatus which comprises: a 4-state input magnet; a first filter layer adjacent to the 4-state input magnet; a first spin channel region adjacent to the first filter layer; a 4-state output magnet; a second filter layer adjacent to the 4-state output magnet; a second spin channel region adjacent to the first and second filter layers; and a third spin channel region adjacent to the second filter layer.

Abstract: Embodiments of the present disclosure are directed toward probabilistic in-memory computing configurations and arrangements, and configurations of probabilistic bit devices (p-bits) for probabilistic in-memory computing. concept with emerging. A probabilistic in-memory computing device includes an array of p-bits, where each p-bit is disposed at or near horizontal and vertical wires. Each p-bit is a time-varying resistor that has a time-varying resistance, which follows a desired probability distribution. The time-varying resistance of each p-bit represents a weight in a weight matrix of a stochastic neural network. During operation, an input voltage is applied to the horizontal wires to control the current through each p-bit. The currents are accumulated in the vertical wires thereby performing respective multiply-and-accumulative (MAC) operations. Other embodiments may be described and/or claimed.

Abstract: A magneto-electric (ME) majority gate device includes a conducting device and a plurality of ME transistors coupled to the conducting device. In one implementation, the plurality of ME transistors include a ME AND gate device with downward interface polarization, a ME-transmission gate device with downward interface polarization, and a ME-XNOR gate device. In another implementation, the plurality of ME transistors is five single-input ME-FETs.

Abstract: A magneto-electric (ME) XNOR logic gate device includes a conducting device; and a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a first gate terminal coupled to a first portion of the split gate for receiving a first input signal; a second gate terminal coupled to a second portion of the split gate for receiving a second input signal; a source terminal coupled to a ground line; and a drain terminal coupled to the conducting device.

Abstract: Described herein are integrated circuit devices formed using perovskite materials. Perovskite materials with a similar crystal structure and different electrical properties can be layered to realize a transistor or memory device. In some embodiments, a ferroelectric perovskite can be incorporated into a device with other perovskite films to form a ferroelectric memory device.

Abstract: A microelectronic assembly is provided comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer between the first layer and a third layer; and a third plurality of IC dies in the third layer. In some embodiments, the second plurality of IC dies comprises IC dies in an array of rows and columns, each IC die of the second plurality of IC dies is coupled to more than one IC die of the first plurality of IC dies, and the third plurality of IC dies is to provide electrical coupling between adjacent ones of the second plurality of IC dies.

Abstract: A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.

Abstract: Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.

Abstract: A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; and a third interconnect extending along a third axis, wherein the first, second and third axes are orthogonal to one another, and wherein a bit-cell of the MRAM bit-cells includes: a magnetic junction device including a first electrode coupled to the first interconnect; a piezoelectric (PZe) layer adjacent to a second electrode, wherein the second electrode is coupled to the second interconnect; and a first layer adjacent to the PZe layer and the magnetic junction, wherein the first layer is coupled the third interconnect.

Abstract: A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.

Abstract: A magneto-electric (ME) majority gate device includes a conducting device and a plurality of ME transistors coupled to the conducting device. In one implementation, the plurality of ME transistors include a ME AND gate device with downward interface polarization, a ME-transmission gate device with downward interface polarization, and a ME-XNOR gate device. In another implementation, the plurality of ME transistors is five single-input ME-FETs.

Abstract: A magneto-electric (ME) XNOR logic gate device includes a conducting device; and a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a first gate terminal coupled to a first portion of the split gate for receiving a first input signal; a second gate terminal coupled to a second portion of the split gate for receiving a second input signal; a source terminal coupled to a ground line; and a drain terminal coupled to the conducting device.

Abstract: An analog multiplication circuit includes switched capacitors to multiply digital operands in an analog representation and output a digital result with an analog-to-digital convertor. The capacitors are arranged with a capacitance according to the respective value of the digital bit inputs. To perform the multiplication, the capacitors are selectively charged according to the first operand of the multiplication. The capacitors are then connected to a common interconnect for charge sharing across the capacitors, averaging the charge according to the charge determined by the first operand. The capacitor are then maintained or discharged according to a second operand, such that the remaining charge represents a number of “copies” of the averaged charge. The capacitors are then averaged and output for conversion by an analog-to-digital convertor. This circuit may be repeated to construct a multiply-and-accumulate circuit by combining charges from several such multiplication circuits.

Abstract: Logic circuits constructed with magnetoelectric (ME) transistors are described herein. A ME logic gate device can include at least one conducting device, for example, at least one MOS transistor; and at least one ME transistor coupled to the at least one conducting device. The ME transistor can be a ME field effect transistor (ME-FET), which can be can be an anti-ferromagnetic spin-orbit read (AFSOR) device or a non-AFSOR device. The gates and logic circuits described herein can be included as standard cells in a design library. Cells of the cell library can include standard cells for a ME inverter device, a ME minority gate device, a ME majority gate device, a ME full adder, a ME XNOR device, a ME XOR device, or a combination thereof.

Abstract: Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.