Abstract: Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic de-multiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.

Abstract: A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; and a third interconnect extending along a third axis, wherein the first, second and third axes are orthogonal to one another, and wherein a bit-cell of the MRAM bit-cells includes: a magnetic junction device including a first electrode coupled to the first interconnect; a piezoelectric (PZe) layer adjacent to a second electrode, wherein the second electrode is coupled to the second interconnect; and a first layer adjacent to the PZe layer and the magnetic junction, wherein the first layer is coupled the third interconnect.

Abstract: An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

Abstract: Embodiments herein describe techniques for a semi-conductor device comprising a channel having a first semiconductor material; a source contact coupled to the channel, comprising a first Heusler alloy; and a drain contact coupled to the channel, comprising a second Heusler alloy. The first Heusler alloy is lattice-matched to the first semiconductor material within a first predetermined threshold. A first Schottky barrier between the channel and the source contact, and a second Schottky barrier between the channel and the drain contact are negative, or smaller than another predetermined threshold. The source contact and the drain contact can be applied to a strained silicon transistor, an III-V transistor, a tunnel field-effect transistor, a dichalcogenide (MX2) transistor, and a junctionless nanowire transistor.

Abstract: Techniques are disclosed for forming vias for integrated circuit structures. During an additive via formation process, a dielectric material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is desired to have vias, openings are etched in the dielectric material through the removed regions, and the openings are filled with a first via material. This is then repeated for a second via material. During the subtractive via formation process, a first via material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is not desired to have vias, openings are etched in the first via material through the removed regions. This is then repeated for a second via material.

Abstract: Techniques are disclosed for forming semiconductor integrated circuits including one or more of source and drain contacts and gate electrodes comprising crystalline alloys including a transition metal. The crystalline alloys help to reduce contact resistance to the semiconductor devices. In some embodiments of the present disclosure, this reduction in contact resistance is accomplished by aligning the work function of the crystalline alloy with the work function of the source and drain regions such that a Schottky barrier height associated with an interface between the crystalline alloys and the source and drain regions is in a range of 0.3 eV or less.

Abstract: An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Bychkov effect; a second magnet with PMA; a magnetoelectric layer adjacent to the second magnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

Abstract: Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; and a third spin channel region adjacent to the 4-state output magnet. Described in an apparatus which comprises: a 4-state input magnet; a first filter layer adjacent to the 4-state input magnet; a first spin channel region adjacent to the first filter layer; a 4-state output magnet; a second filter layer adjacent to the 4-state output magnet; a second spin channel region adjacent to the first and second filter layers; and a third spin channel region adjacent to the second filter layer.

Abstract: An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

Abstract: Systems and methods for precision writing of weight values to a memory capable of storing multiple levels in each cell are disclosed. Embodiments include logic to compare an electrical parameter read from a memory cell with a base reference and an interval reference, and stop writing once the electrical parameter is between the base reference and the base plus the interval reference. The interval may be determined using a greater number of levels than the number of stored levels, to prevent possible overlap of read values of the electrical parameter due to memory device variations.

Abstract: Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.

Abstract: Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; and a third spin channel region adjacent to the 4-state output magnet. Described in an apparatus which comprises: a 4-state input magnet; a first filter layer adjacent to the 4-state input magnet; a first spin channel region adjacent to the first filter layer; a 4-state output magnet; a second filter layer adjacent to the 4-state output magnet; a second spin channel region adjacent to the first and second filter layers; and a third spin channel region adjacent to the second filter layer.

Abstract: An apparatus. The apparatus includes a macro storage cell having a first storage device and a second storage device. The first and second storage devices each able to store more than two states. The macro storage cell to store multiple values resulting from a combination of the respectively stored states of the first and second storage devices.

Abstract: Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatus which comprises: a first electrode; a magnetic junction having a free magnet; and one or more layers of Jahn-Teller material adjacent to the first electrode and the free magnet of the magnetic junction.

Abstract: An apparatus. The apparatus includes a macro storage cell having a first storage device and a second storage device. The first and second storage devices each able to store more than two states. The macro storage cell to store multiple values resulting from a combination of the respectively stored states of the first and second storage devices.

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.

Abstract: Disclosed herein are staged oscillators for neural computing, as well as related methods and assemblies. In some embodiments, neural computing circuitry may include a first oscillator set, a second oscillator set, and an averaging structure coupled between the first oscillator set and the second oscillator set.

Abstract: Disclosed herein are neural computing dies with stacked neural core regions as well as related methods and assemblies. In some embodiments, a neural computing die may include: a first neural core region; a second neural core region; and an inter-core interconnect region in a volume between the first neural core region and the second neural core region, wherein the inter-core interconnect region includes a conductive pathway between the first neural core region and the second neural core region, and the conductive pathway includes a conductive via.

Abstract: A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; and a third interconnect extending along a third axis, wherein the first, second and third axes are orthogonal to one another, and wherein a bit-cell of the MRAM bit-cells includes: a magnetic junction device including a first electrode coupled to the first interconnect; a piezoelectric (PZe) layer adjacent to a second electrode, wherein the second electrode is coupled to the second interconnect; and a first layer adjacent to the PZe layer and the magnetic junction, wherein the first layer is coupled the third interconnect.

Abstract: Techniques are disclosed for forming vias for integrated circuit structures. During an additive via formation process, a dielectric material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is desired to have vias, openings are etched in the dielectric material through the removed regions, and the openings are filled with a first via material. This is then repeated for a second via material. During the subtractive via formation process, a first via material is deposited, an etch stop layer is deposited, a checkerboard pattern is deposited on the etch stop layer, regions in the checkerboard pattern are removed where it is not desired to have vias, openings are etched in the first via material through the removed regions. This is then repeated for a second via material.