Patents by Inventor DMITRY A. DZILNO
DMITRY A. DZILNO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220248500Abstract: A method of providing power to a plurality of heaters in multiple zones for wafer-processing equipment may include causing a voltage to be supplied to a plurality of power leads configured to supply the voltage to a plurality of different heating zones in a pedestal, causing current to be received from the plurality of different heating zones through a return lead that is shared by the plurality of power leads, and causing a polarity of the voltage provided to the plurality of power leads to switch. The switching frequency may be configured such that a DC chucking operation can be active at the same time to hold a substrate to the pedestal. Duty cycling the heating zones that share the return lead may minimize the current through the shared return lead.Type: ApplicationFiled: February 4, 2021Publication date: August 4, 2022Applicant: Applied Materials, Inc.Inventors: Uwe P. Haller, Kiyki-Shiy N. Shang, Dmitry A. Dzilno
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Publication number: 20220208531Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.Type: ApplicationFiled: December 26, 2020Publication date: June 30, 2022Applicant: Applied Materials, Inc.Inventors: Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
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Publication number: 20220165540Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220157569Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.Type: ApplicationFiled: November 13, 2020Publication date: May 19, 2022Applicant: Applied Materials, Inc.Inventors: Robert B. Moore, Jared Ahmad Lee, Marc David Shull, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno
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Publication number: 20220130704Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. Peripheral edges of one or both of the first and second bipolar electrodes may extend beyond an outer periphery of the seat. The assemblies may include an RF power supply coupled with the first and second bipolar electrodes. The assemblies may include a first floating DC power supply coupled with the first bipolar electrode. The assemblies may include a second floating DC power supply coupled with the second bipolar electrode.Type: ApplicationFiled: October 23, 2020Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Jian Li, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Zheng J. Ye, Paul L. Brillhart
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Patent number: 11315763Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.Type: GrantFiled: September 1, 2020Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Dmitry A. Dzilno, Anantha K. Subramani, John C. Forster, Tsutomu Tanaka
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Publication number: 20220122873Abstract: Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.Type: ApplicationFiled: October 19, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Jian Li, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Paul L. Brillhart, Akshay Gunaji, Mayur Govind Kulkarni, Sandeep Bindgi, Sanjay Kamath, Kwangduk Douglas Lee, Zongbin Wang, Yubin Zhang, Yong Xiang Lim
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Publication number: 20220122874Abstract: A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, and measuring an initial current provided to at least a first electrode of the two electrodes. The method further includes initiating a process that affects a DC voltage of the substrate, then measuring a modified current provided to at least the first electrode, and determining, based at least on the initial current and the modified current, a modified chucking voltage for a selected one of the two electrodes, that will reduce chucking force imbalance across the substrate. The method also includes providing the modified chucking voltage to the selected one of the two electrodes.Type: ApplicationFiled: October 21, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Jian Li, Juan Carlos Rocha-Alvarez, Dmitry A. Dzilno
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Publication number: 20220122875Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The first bipolar electrode may include at least two separated mesh sections, with each mesh section characterized by a circular sector shape. The substrate support assemblies may include a second bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The second bipolar electrode may include a continuous mesh extending through the at least two separated mesh sections of the first bipolar electrode.Type: ApplicationFiled: October 21, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Jian Li, Zheng J. Ye, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez
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Publication number: 20220102179Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
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Patent number: 11282676Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.Type: GrantFiled: June 18, 2019Date of Patent: March 22, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220084796Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a spring which is disposed between electrodes and a dielectric ring.Type: ApplicationFiled: September 11, 2020Publication date: March 17, 2022Applicant: Applied Materials, Inc.Inventors: Quoc Truong, Dmitry A. Dzilno, Robert B. Moore
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Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool
Publication number: 20210327686Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: ApplicationFiled: April 29, 2021Publication date: October 21, 2021Applicant: Applied Materials, Inc.Inventors: Xiaopu Li, Jozef Kudela, Kallol Bera, Tsutomu Tanaka, Dmitry A. Dzilno -
Patent number: 11114282Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.Type: GrantFiled: June 8, 2020Date of Patent: September 7, 2021Assignee: Applied Materials, Inc.Inventors: Philip Allan Kraus, Thai Cheng Chua, Christian Amormino, Dmitry A. Dzilno
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Patent number: 11081318Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.Type: GrantFiled: December 14, 2018Date of Patent: August 3, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kenichi Ohno, Keiichi Tanaka, Li-Qun Xia, Tsutomu Tanaka, Dmitry A. Dzilno, Mario D. Silvetti, John C. Forster, Rakesh Ramadas, Mike Murtagh, Alexander V. Garachtchenko
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Publication number: 20210125820Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.Type: ApplicationFiled: October 21, 2020Publication date: April 29, 2021Applicant: Applied Materials, Inc.Inventors: Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
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Publication number: 20210059037Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: ApplicationFiled: August 19, 2020Publication date: February 25, 2021Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool
Publication number: 20210050187Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: ApplicationFiled: March 1, 2019Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Publication number: 20200395194Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.Type: ApplicationFiled: September 1, 2020Publication date: December 17, 2020Applicant: Applied Materials, Inc.Inventors: Kallol Bera, Dmitry A. Dzilno, Anantha K. Subramani, John C. Forster, Tsutomu Tanaka
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Patent number: D938373Type: GrantFiled: October 25, 2019Date of Patent: December 14, 2021Assignee: Applied Materials, Inc.Inventors: Jason M. Schaller, Benjamin Riordon, Mitchell DiSanto, Paul Forderhase, Gary Wyka, Jeffrey Hudgens, Paul Z. Wirth, Charles T. Carlson, Siva Chandrasekar, Michael Carrell, Venkata Raghavaiah Chowdhary Kode, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez