Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

Abstract: A heater assembly for a substrate support assembly includes a flexible body. The heater assembly further includes one or more resistive heating elements disposed in the flexible body. The heater assembly further includes a first metal layer disposed on the top surface of the flexible body and extending at least partially onto an outer sidewall of the flexible body. The heater assembly further includes a second metal layer disposed on a bottom surface of the flexible body and extending at least partially onto the outer sidewall of the flexible body, wherein the second metal layer is coupled to the first metal layer at the outer sidewall of the flexible body such that the first metal layer and the second metal layer enclose, and form a continuous electrically conductive path around, the outer sidewall of the flexible body.

Abstract: A method includes feeding powder comprising a yttrium oxide into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating an article to apply a ceramic coating onto the article, wherein the ceramic coating comprises the yttrium oxide, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract: Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

Abstract: Implementations of the present disclosure relate to an electrode assembly for a processing chamber. In one implementation, the electrode assembly includes a cathode electrode having an inner volume and a ground anode electrode spaced apart from the cathode electrode. A first etchant gas is introduced through the cathode electrode and into the inner volume. The first etchant gas is ionized within the inner volume. The ionized first etchant gas is filtered to allow only radicals to flow from the inner volume into a mixing volume formed within the ground anode electrode. The mixing volume is separated from the inner volume by a gas injection ring. The radicals from the first etchant gas are mixed and reacted with a second etchant gas in molecular phase, which is introduced through the ground anode electrode into a sidewall of the gas injection ring before entering the mixing volume in an evenly distributed manner.

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

Abstract: Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

Abstract: Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The cambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber housing may include a lid. The chamber may include a pedestal configured to support a substrate within a processing region of the chamber. The chamber may also include a first showerhead coupled with an electrical source. The first showerhead may be positioned within the semiconductor processing chamber between the lid and the processing region. The chamber may also include a first dielectric faceplate positioned within the semiconductor processing chamber between the first showerhead and the processing region. The chamber may include a second showerhead coupled with electrical ground and positioned within the semiconductor processing chamber between the first dielectric faceplate and the processing region.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.

Abstract: A test fixture includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The inner conductor includes a top portion having a first diameter, a bottom portion having a second diameter, and a third portion proximate the bottom portion that has a third diameter that is less than the second diameter and is greater than the first diameter. An electrical property of a chamber component disposed within the outer conductor is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.