Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.

Abstract: A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a changeable magnetization; a first nonmagnetic spacer layer on the first magnetic free layer; a reference layer having a fixed magnetization on the first nonmagnetic spacer layer; a second nonmagnetic spacer layer on the reference layer; a second magnetic free layer on the second nonmagnetic spacer layer, the second magnetic free layer having a changeable magnetization; and a second spin-orbit interaction active layer on the second magnetic free layer.

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10?6 erg/cm.

Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.

Abstract: A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jc0 of the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack.

Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a free layer, providing a pinned layer and providing a nonmagnetic spacer between the free and pinned layers. The free layer is switchable between stable magnetic states using a write current passed through the magnetic junction. At least one of the step of providing the free layer and the step of providing the pinned layer includes depositing a magnetic layer; depositing an adsorber layer on the magnetic layer and performing at least one anneal. The magnetic layer is amorphous as-deposited and includes an interstitial glass-promoting component. The adsorber layer attracts the interstitial glass-promoting component and has a lattice mismatch with the nonmagnetic spacer layer of not more than ten percent. Each of the anneal(s) is at a temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius.

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

Abstract: A magnetic memory device comprises a first reference magnetic layer, a first tunnel barrier layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. A magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe. One embodiment comprises a second reference magnetic layer on the second tunnel barrier layer in which the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack, and in which a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier and the second reference magnetic layer in a second direction is less than about 30 nm.