Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.

Abstract: Disclosed herein are a protective film having a structure capable of protecting an adherend and an electronic appliance including the same. The protective film includes a protection layer comprising polyolefin, and an adhesive layer laminated on the protection layer and comprising a silicone adhesive.

Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.

Abstract: An image sensor is described. The image sensor may include a substrate including a pixel area, a logic area, and a guard area disposed between the pixel area and the logic area. The guard area may substantially prevent transfer of heat generated in the logic area from reaching the pixel area.

Abstract: An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.

Abstract: Disclosed herein are a protective film having a structure capable of protecting an adherend and an electronic appliance including the same. The protective film includes a protection layer comprising polyolefin, and an adhesive layer laminated on the protection layer and comprising a silicone adhesive.

Abstract: An image sensor is described. The image sensor may include a substrate including a pixel area, a logic area, and a guard area disposed between the pixel area and the logic area. The guard area may substantially prevent transfer of heat generated in the logic area from reaching the pixel area.

Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Abstract: An image sensor includes a photoelectric conversion element suitable for generating photocharges corresponding to incident light, a transfer transistor suitable for transferring the generated photocharges to a floating diffusion node based on a transfer signal, and a reset transistor suitable for resetting the floating diffusion node based on a reset signal and including a memory gate.

Abstract: A cooling system for a bus may include a heat dissipating plate mounted on a roof panel of a top of a bus and cooling heated fluid with wind, and an actuator connected to an air tank, selectively actuating the heat dissipating plate and adjusting an inclination angle between the heat dissipating plate and the roof panel.

Abstract: A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

Abstract: There is provided a red phosphor including a compound represented by an empirical formula Az(Sr,M)2(Si,Al)O4-xNy:R(0<x<3, y=2x/3, and 0.0001?z<0.1), and has a grain size distribution corresponding to 6.9 ?m?D50?13.9 ?m, wherein M and Al are optional, A is at least one element selected from a group consisting of lithium (Li), potassium (K) and sodium (Na), and M is at least one element selected from a group consisting of Barium (Ba), magnesium (Mg) and calcium (Ca).

Abstract: An image sensor includes a light receiving section suitable for generating photocharges corresponding to incident light, a first driving section suitable for transferring a first output voltage corresponding to a first voltage to a first column line based on the photocharges, a second driving section suitable for transferring a second output voltage corresponding to a second voltage to a second column line based on the photocharges, and an output section suitable for outputting an image signal based on the first and second output voltages.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.