Abstract: A transistor includes a substrate and a gate insulation layer formed on the substrate having a negative charge storage layer with a fixed negative charge to induce a buried channel in the substrate. A gate electrode is formed on the gate insulation layer.

Abstract: An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.

Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

Abstract: Provided is a red phosphor having superior thermal and chemical stability and excellent luminous efficiency, wherein the red phosphor comprises a compound expressed in the composition formula: Az(Sr, M)2(Si, Al)O4?xNy:R(0<x<3, y=2x/3, 0.001<z<0.1), where A is at least one element selected from a group consisting of lithium (Li), potassium (K) and sodium (Na), M is at least one element selected from a group consisting of barium (Ba), magnesium (Mg), and calcium (Ca), and R is at least one element selected from a group consisting of lanthanide and a transition metal element.

Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.

Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.

Abstract: According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2: In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Abstract: A lighting device may be provided to include a heat sink which includes a receiving recess and a top surface including a hole; a light source module which includes a substrate disposed on the heat sink, a light emitting device disposed on the substrate and a pad disposed on the substrate; a power supplier which is disposed in the receiving recess of the heat sink and includes a projection outputting a power signal for driving the light source module; and a connector which is coupled to the hole of the heat sink, includes a contacting part electrically connected to the pad of the light source module, and is electrically connected to the projection of the power supplier.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Abstract: A lighting device may be provided to include a heat sink which includes a receiving recess and a top surface including a hole; a light source module which includes a substrate disposed on the heat sink, a light emitting device disposed on the substrate and a pad disposed on the substrate; a power supplier which is disposed in the receiving recess of the heat sink and includes a projection outputting a power signal for driving the light source module; and a connector which is coupled to the hole of the heat sink, includes a contacting part electrically connected to the pad of the light source module, and is electrically connected to the projection of the power supplier.

Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.

Abstract: The present technology provides a semiconductor device that includes a substrate including an active region and an device isolation region, a plurality of micro insulation structures formed in the substrate of the device isolation region and spaced from each other, and an impurity region suitable for filling spaces between the micro insulation structures and for surrounding the micro insulation structures in the substrate of the device isolation region, and a method of fabricating the semiconductor device by improving a method of forming device isolation regions that insulate active regions. In particular, discontinuous micro insulation structures are suggested.

Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

Abstract: A lighting device may be provided that includes: a heat sink; a light source module which is disposed on the heat sink, includes a substrate having at least one hole, and includes a plurality of light emitting devices disposed on a top surface of the substrate; a power supply unit which is disposed within the heat sink and includes a support plate and a plurality of parts disposed on the support plate; and a soldering portion which connects the substrate and the support plate. The support plate includes an extended substrate which is disposed in the hole of the substrate. The extended substrate includes a through-portion which has passed through the hole of the substrate. The soldering portion electrically connects the through-portion of the extended substrate and the top surface of the substrate.

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract: A complex crystal phosphor is an inorganic composition containing at least an M element, an Al element, silicon, oxygen, and nitrogen. The inorganic composition has particles having at least two types of crystal phase, and the at least two types of crystal phase include a first crystal phase which is the same as a M2SiO4 crystal and a second crystal phase as a ?-sialon crystal. Here, M is at least one element selected from the group consisting of (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

Abstract: A lighting device includes a heat sink including a first heat radiation part and a second heat radiation part; a light source module including a substrate disposed on the first heat radiation part, and a light emitting device disposed on the substrate; and a power supply unit which is disposed within the second heat radiation part and supplies power to the light source module. The second heat radiation part includes an inner portion receiving the power supply unit therewithin, an outer portion enclosing the inner portion, and a first receiver disposed between the inner portion and the outer portion. The first heat radiation part includes an upper portion which is disposed on the inner portion of the second heat radiation part and on which the substrate of the light source module is disposed, and a lower portion disposed in the first receiver of the second heat radiation part.

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.