Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

Abstract: A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

Abstract: A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

Abstract: A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

Abstract: The present invention is directed to an integrated flexure mount scheme for dynamic isolation of ultrasonic transducers for use with a wire bonding machine. The transducer has a body of a generally elongated shape having front, rear, and main portions. The transducer has mounting flanges for mounting the transducer to the wire bonding machine. The mounting flanges have at least two integrated flexures that connect the mounting flange to the main portion of the transducer body and define at least one flexure orifice.

Abstract: The present invention is directed to an integrated flexure mount scheme for dynamic isolation of ultrasonic transducers for use with a wire bonding machine. The transducer has a body of a generally elongated shape having front, rear, and main portions. The transducer has mounting flanges for mounting the transducer to the wire bonding machine. The mounting flanges have at least two integrated flexures that connect the mounting flange to the main portion of the transducer body and define at least one flexure orifice.

Abstract: A shape memory alloy (SMA) actuator predeformed in compression actuates a cable cutter mechanism. A cable or other item to be cut is placed between an anvil and a movable blade affixed to the SMA element. The SMA element is heated by an electrical resistance heater to cause it to return to its undeformed elongated state, thereby moving the blade against the anvil to compress and sever the cable or other item. Ones of the shape memory alloy actuator have a plurality of parallelly arranged SMA elements, every other one of which is predeformed in compression and intermediate ones of which are predeformed in tension. The elements are coupled end-to-end so that, when they are heated to cause them to return to their undeformed states, their respective elongations and shrinkages combine at the output to produce an actuation that is the cumulation in the same direction of the changes of all the elements. The plurality of elements may be in a side-by-side or concentric arrangement.

Abstract: A shape memory alloy (SMA) actuator predeformed in tension actuates a separation device mechanism. A segmented nut, which engages a threaded bolt to be held and released, is held together by a nut retainer that is movable with respect to the nut and is affixed to the SMA element. The SMA element is heated by an electrical resistance heater to cause it to return to its undeformed state, thereby moving the retainer relative to the nut segments. When the retainer disengages from the segments, the segments are free to move outwardly thereby releasing the bolt or other item. Ones of the shape memory alloy actuator have a plurality of parallelly arranged SMA elements, every other one of which is predeformed in compression and intermediate ones of which are predeformed in tension.

Abstract: A sludge treatment technique adapted for separating volatile liquid hydrocarbons and/or water from sludge solids in a horizontal enclosed tank having a supported bed of filter particles. Liquids are permitted to drain and evaporate under controlled conditions and a removable top closure permits exposure of sludge solids to ambient U-V radiation and weathering conditions whereby lead-containing sludge is detoxified to environmentally acceptable levels.