Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etchin

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Abstract: A phase change switching device includes a substrate comprising a main surface, an RF input pad and a plurality of RF output pads disposed over the main surface, and phase change switch connections between the RF input pad and each of the RF output pads, wherein the phase change switch connections each include a phase change material and a heating element thermally coupled to the phase change material, wherein each of the RF output pads are arranged outside of an outer perimeter of the RF input pad, and wherein plurality of RF output pads at least partially surrounds the outer perimeter of the RF input pad.

Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Abstract: A housing includes a first partial housing and a second partial housing which complement each other in an assembled state to form the housing. The first partial housing has a first conductor receptacle that receives a first electrical conductor and a first connection assembly for connecting the first electrical conductor to a first contact element, and is provided with a passage opening for a second contact element. The second partial housing has a second conductor receptacle that receives a second electrical conductor and a second connection assembly for connecting the second electrical conductor to the second contact element. The second partial housing is configured to abut against the first partial housing in the region of the passage opening. In the assembled state, the second conductor receptacle forms a common cavity with the passage opening.

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

Abstract: A charging socket of an electric or hybrid vehicle is adapted to connect to a charging plug. The charging socket comprises a socket wall, and at least one heating module shaft extending into the socket wall and adapted to receive a heating module.

Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

Abstract: A phase change material switch device is provided. In one implementation, the phase change material switch device includes a phase change material and a heater device thermally coupled to the phase change material. During heating phases, a coupling device provides a first electrical impedance between a power source and the heater device. Outside the heating phases, the coupling device provides a second, higher, impedance.

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

Abstract: A method includes providing a semiconductor substrate comprising a main surface, forming a dielectric region on the main surface, forming a recess in the dielectric region, forming a strip of phase change material within the recess, forming a heating element that is thermally coupled to the strip of phase change material, forming an interconnection region over the main surface before or after forming the recess, the interconnection region including a metallization layer and a dielectric layer, electrically connecting the strip of phase change material to a connecting one of the metallization layers from the interconnection region, and completing formation of the interconnection region after electrically connecting the strip of phase change material, wherein completing formation of the interconnection region includes forming an outer one of the dielectric layers from the interconnection region that is disposed over the connecting one of the metallization layers and comprises a planar upper surface.

Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

Abstract: A plug cover hinge of a charging connection of an electric vehicle includes a cover or cover flap for selectively covering a socket or plug of the charging connection, and a four-joint hinge. The four-joint hinge defines two flap-side joints attached to the cover flap, and two fastening-side joints attachable to a frame. The four-joint hinge includes two joint elements, with each joint element connecting one of the flap-side joints to one of the fastening-side joints.

Abstract: A phase change material switch device is provided. The phase change material switch device includes a phase change material, a first electrode electrically coupled to the phase change material, and at least one heater thermally coupled to the phase change material. An equalization device is configured to provide an impedance coupling between the first electrode and the phase change material. The impedance coupling varies over the phase change material.

Abstract: A phase change switch device includes a phase change material and a heater device thermally coupled to the phase change material. The heater device is configured to have a first electrical resistance in a first state where current is applied to the heater device for heating the phase change material, and have a second electrical resistance higher than the first electrical resistance in a second state outside heating phases of the heater device.

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

Abstract: An electrical connector for grounding a multicore cable having a shield includes a spring terminal engaging the shield and an insulation displacement connection (IDC) terminal terminating a ground wire. The shield is grounded through the electrical connector.

Abstract: A high-current contact device includes a first contact element transmitting electrical energy, a circuit carrier, a first data contact transmitting data, and a data interface. The first contact element extends through the circuit carrier along a mating axis at a feedthrough. A conductor track of the circuit carrier electrically connects the first data contact to the data interface. A carrier of the circuit carrier is injection-molded and mechanically supports the first data contact, the conductor track, and the data interface.

Abstract: A housing part for an electrical connector includes a cable channel receiving a cable, a flange surface adapted to abut a complementary housing part, and a sealing gasket extending along the flange surface. The sealing gasket has a pair of cable sealing portions extending across the cable channel. The cable sealing portions are spaced apart from one another in an axial direction of the cable channel.

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.