Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.

Abstract: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof. The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.

Abstract: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: A thin-film type solar cell module having a reflective media layer capable of optionally transmitting light through intervals formed on the reflective media layer and a method of fabricating the same are described.

Abstract: The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.

Abstract: The present invention relates to a gas concentrator, which produces concentrated gas by applying a pressure difference to adsorbent having selective adsorption property to specific gas from mixed gas and by separating the specific gas.

Abstract: A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel. The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.

Abstract: A gas separation apparatus comprises: at least two absorption beds respectively including an absorbent for absorbing certain gas; at least two three-way valves respectively installed on conduits for respectively connecting the absorption beds and outside of the apparatus; and a pump respectively connected to each end of the absorption beds and the three-way valves, for discharging gas absorbed by the absorbent and gas that is not absorbed by the absorbent. Gas that is absorbed by the absorbent and gas that is not absorbed by the absorbent are discharged by the single pump, thereby having a simple structure and reducing an installation space and a fabrication cost.

Abstract: The present invention relates a method for concentrating a gas by applying a pressure difference to an adsorbent and an apparatus therefor, and particularly, a method for producing an enriched gas in a large amount by introducing a continuous production into every step of the process focusing on productivity rather than concentration of the product gas and an apparatus therefor. The present invention relates to a method incorporating the vacuum swing adsorption method with the pressure swing adsorption method, particularly the rapid pressure swing adsorption method which can continuously produce a desired material in a depressurization step to improve recovery rate of the desired material and productivity and an apparatus therefor. The apparatus according to the present invention is advantageously applied in a small size machine rather than for industrial uses.

Abstract: The present invention relates to a gas concentrator, which produces concentrated gas by applying a pressure difference to adsorbent having selective adsorption property to specific gas from mixed gas and by separating the specific gas.

Abstract: A negative ion generator using a carbon fiber can facilitate its manufacturing process, improve negative ion generation efficiency and implement improved antimicrobial and sterilizing functions by distributing metallic particles in an activated carbon fiber and then applying a voltage thereto. To this end, the negative ion generator comprises: a carbon fiber in which metallic particles are distributed; an electrode connected to the carbon fiber and applying a voltage thereto; and a power unit for supplying power to the electrode.

Abstract: The present invention relates a method for concentrating a gas by applying a pressure difference to an adsorbent and an apparatus therefor, and particularly, a method for producing an enriched gas in a large amount by introducing a continuous production into every step of the process focusing on productivity rather than concentration of the product gas and an apparatus therefor. The present invention relates to a method incorporating the vacuum swing adsorption method with the pressure swing adsorption method, particularly the rapid pressure swing adsorption method which can continuously produce a desired material in a depressurization step to improve recovery rate of the desired material and productivity and an apparatus therefor. The apparatus according to the present invention is advantageously applied in a small size machine rather than for industrial uses.