Abstract: A memory array has a memory cell that comprises a storage element storing a logical state at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line. The reduced voltage is reduced relative to an operating voltage of at least one peripheral circuit associated with reading and/or writing of the memory cell.

Abstract: A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line.

Abstract: A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line.

Abstract: A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line.

Abstract: A method is provided for writing to a memory cell having a read access circuit that is separate and isolatable from a write access circuit. The method comprises providing a logic state to be written to the memory cell onto a write bit line coupled to the memory cell through the write access circuit, changing a write word line that controls the write access circuit from a deactivated low voltage state to an activated high voltage state, and changing a read word line that controls the read access circuit from an activated low voltage state to a deactivated high voltage state, wherein the change in voltage on the read word line provides a voltage boost to the voltage on the write word line caused by the electrical coupling between the read word line and the write word line to provide write assist to the memory cell during a write operation.

Abstract: A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line.

Abstract: A method is provided for writing to a memory cell having a read access circuit that is separate and isolatable from a write access circuit. The method comprises providing a logic state to be written to the memory cell onto a write bit line coupled to the memory cell through the write access circuit, changing a write word line that controls the write access circuit from a deactivated low voltage state to an activated high voltage state, and changing a read word line that controls the read access circuit from an activated low voltage state to a deactivated high voltage state, wherein the change in voltage on the read word line provides a voltage boost to the voltage on the write word line caused by the electrical coupling between the read word line and the write word line to provide write assist to the memory cell during a write operation.

Abstract: A first clock stage in a circuit utilizes a second stage clock for triggering the falling edge of a first clock stage output. The output will not reset until both the first clock is low and the second clock are high due to the addition of the second clock signal. This is accomplished by adding a transistor and inverter to the first stage. The drain of a P-type FET is connected to source of the P-FET being controlled by the first clock through its gate. The additional P-FET is controlled by an inverted second clock signal. The clock signal is inverted by an inverter connected to the gate of the additional P-FET. Stability is provided to the first stage by creating a full keeper, which holds the output from the logic device in the first stage. A pair of transistors are connected by their drains to the output of the logic device. The transistors are controlled by an inverter, which is connected to the pairs' bases, wherein the inverter receives the output from the logic device.

Abstract: A domino logic circuit has a beta controllable noise margin and an ability to hold an evaluated state until a received clock signal goes to a low state by adding an additional N-channel field effect transistor (NFET) in series with another N-channel field effect transistor, where both of these devices receive the date input signal. Additionally, a P-channel field effect transistor (PFET) also receives the data input signal into its gate electrode. This P-channel field effect transistor is positioned so that it opposes one of the N-channel field effect transistors. The advantages gained by this additional circuitry may also be implemented within a multiplexer circuit.

Abstract: An on-chip clock distribution system and method which utilizes local clock buffers to provide an improved clock signal distribution while avoiding the disadvantages of conventional central buffer and repowered distribution systems. The system also reduces distribution routing problems and distributes “delta-I” problem and thermal problem, and also supports better local delay tuning.

Abstract: A latch circuit (10) includes a feedback path which is isolated from a circuit critical path (12). A scan input component (22) is coupled to the feedback path for providing scan test data to the latch circuit (10). A scan output component (23) may also be coupled to the feedback path for providing a separate scan out signal.

Abstract: A silicon-on-insulator digital circuit combination having a body voltage control stage and a voltage clamp stage. The body voltage control stage is responsive to an input control signal to provide an output driver signal. The body voltage control stage has a first transistor with a terminal for electrically-coupling to a combinational logic circuit, and a body contact electrically-coupled to the input control signal such that a threshold voltage of the transistor is reduced when the transistor is placed in an active state. It can be readily appreciated that the reduced threshold voltage of the transistor increases the transition rate for the first transistor to an inactive state in response to the input control signal. The voltage clamp stage has a second transistor responsive to the input control signal such that the terminal is electrically-coupled to a reference voltage when the first transistor is in the inactive state.

Abstract: A register file array for storing or outputting binary logic bits of information encoded in 2B format is disclosed. The array includes an integrated 2B encoder which encodes stored information in 2B format before access by a read port to provide 2B formatted output without significantly affecting memory access time.

Abstract: A dynamic switching circuit for use in a domino circuit array is disclosed. The dynamic switching circuit includes a charge-saving transistor for preventing charge stored on the dynamic circuit's output node from discharging to ground. The charge stored on the output node is then fed back to a precharge control transistor to charge the dynamic node during the subsequent precharge/evaluate cycle.

Abstract: An edge triggered latch has an improved transparency window, which is essentially the delay of the N-stack pull-down tree. This minimizes the delay yet guarantees that the circuit will have enough time to evaluate the input data, since the evaluation is limited by the pulse width. This circuit eliminates early mode failure for latches placed in series, without the requirement of delay padding.

Abstract: Switching on a first line, from a first signal level to a second level, tends to induce a change in signal level of a second line. To reduce induced noise, the second line is connected to a power rail for a predetermined time interval, responsive to the switching on the first line. The connecting for the time interval tends to counteract the change induced in the second line by the signal of the first line.

Abstract: Performance is increased within a dynamic multiplexer by removing the foot device and replacing it with a logic gate (such as an OR, NOR, or NAND gate) receiving the select signals and activating the precharge device within the dynamic multiplexer circuit. With such a configuration, crowbar current is still inhibited.

Abstract: An improved random-access memory apparatus and method for rapidly reading and writing high-level logic data to and fiom the random-access memory apparatus during phase-driven timing cycles. The improved random-access memory apparatus includes an unbalanced storage circuit for the evanescent storage of binary data, and includes two opposing logic inverters coupled together such that high level logic data can be rapidly written to the unbalanced storage circuit during a write cycle. A first logic inverter is sized larger than a second logic inverter. In addition, the improved random-access memory apparatus includes a circuit for reading and writing binary data to and from the unbalanced storage circuit. The circuit for reading and writing binary data to and from the unbalanced storage circuit operates in a cycle which includes clock phases carried on a phase line to the circuit for reading and writing binary data to and from the unbalanced storage circuit.

Abstract: A method and implementing structure for a domino block circuit 200 includes a minimal component latching circuit 203 which is merged with an exemplary MUX functional block 201, to provide both inverting and latching functions with minimal propagation delay in the domino data path. Implementations with scanning circuitry and including a holding feature are also illustrated.

Abstract: A method and implementing structures for a domino block circuit configuration includes a plurality of domino logic blocks including inverter circuits to provide inverted signals which are needed for a comprehensive logic analysis and processing. A plurality of clocking signals are applied at various clocking inputs throughout the circuit. The clocking signals are timed relative to each other in a timing sequence to assure that the logic circuit evaluations occur only after relevant data and switching signals have stabilized.