Abstract: A diode laser array assembly made from a plurality of linear diode laser array subassemblies stacked one above the other. Each subassembly is an array of individual laser beam emitters, such as a laser bar, mounted on a support plate. An electrically conductive path goes from one major surface of a support plate, through the linear laser array, to an opposite major surface of the support plate. Each subassembly is connected physically and electrically to adjacent subassemblies to form the final assembly. In one embodiment, the support plates are electrically insulating and partly coated or covered with conducting material. The plates are either rectangular with projections and directly connected, rectangular with metal plates between each other, or rectangular and connected in a staircase configuration. Alternatively, the support plates may be electrically conducting with an insulating layer and a conducting layer disposed in a sandwich configuration.

Abstract: A hybrid index/gain guided semiconductor laser has a gain guide type body with index waveguide attributes is characterized by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provide regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region.

Abstract: A fiberoptic coupling system comprising a phased array semiconductor laser and a squashed multimode light transmitting fiber. The squashed input end has an oblong, preferably elliptical, or polygonal cross-section with major and minor core widths. The major width decreases toward an output end which preferably has a circular cross-section. The minor width may increase toward the output end or remain constant. This increase and decrease correspond to the characteristic laser light beam widths and divergences in planes parallel and perpendicular to an active region of the laser such that the fiber core widths are at least as large as the laser light beam widths and the fiber has input numerical apertures that cause the beam to be coupled at the divergences. This system has a light coupling efficiency of at least 70 percent.

Abstract: A semiconductor quantized layered structure comprising first and second different semiconductor materials comprising compound semiconductors from both the Group III and Group V elements and forming a plurality of alternate layers, each interfaced to its adjacent layer in a semiconductor homojunction or heterojunction. The bottom of the conduction bands of the first and second materials are at different energy levels and the tops of the valence bands of the first and second materials are at different energy levels. The bottoms of the conduction bands of the first and second materials form a plurality of serially arranged potential wells and barriers due to differences in the band structures of the different materials forming alternate layers and the interfacing of the layers forming heterojunctions so that the thinness of the layers will spatially localize electrons to obtain quantized electron states in one dimension transverse to the longitudinal extent of said layers.

Abstract: A laser cavity optical system is provided for stabilizing the laser far field dominate lobe so that no beam shift occurs. The laser cavity optical system comprises a lens system positioned at one facet of a phased array semiconductor laser for imaging the near field pattern of the laser comprising a single beam waist position in a first spatial direction and reimaging the far field pattern in a second spatial direction after having first focused the far field pattern in the second spatial direction to a single beam waist position. The improvement in the laser cavity optical system comprises a partially reflecting, partially transmitting mirror located at the second spatial direction beam waist position to stabilize the laser beam and prevent laser beam shift at higher operating powers and operating temperatures. Feedback means provided in the system is capable of either spatially or angularly discriminating relative to far field lobes present in a portion of said reflected light output.

Abstract: A heterostructure semiconductor laser emitting light in a direction vertical to the horizontal active layer has one or more internal reflectors for feedback. Angled reflectors, in the form of grooves etched at an angle exceeding the angle of total internal reflection through the layers, totally internally reflect light out of the laser. One or more of the following feedback constructions are used separately or in combination to provide low threshold current and frequency selection. Insulating windows may be put on the grooves. A periodic grating on a layer adjacent the active layer provides distributed feedback. A plurality of thin dielectric layers placed next to the active layer reflect light back into the active layer. Two parallel integral feedback facets crossing vertically through the active layer act as planar mirrors.

Abstract: A phased array semiconductor laser comprises a plurality of spatially disposed multiple lasing elements formed relative to an active region providing optical cavities and multi-emitters for light wave generation and propagation under lasing conditions. The optical field of the lasing elements are coupled into the optical cavities of adjacent lasing elements to provide a phased locked condition across the array. Structural means associated with the laser causes regions between the optical cavities to produce higher gain in those between regions as compared to the gain experienced in the optical cavities by spatially modulating the optical overlap of the optical field of each of the lasing elements laterally across the array so as to favor the fundamental supermode over the other potential supermodes of the array laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: A multi-emitter extended source solid state laser designed to omit light beams at multiple wavelengths within a narrow total spectral bandwidth, that is, a relatively incoherent composite output beam of narrow total spectral bandwidth, is used as the input to a multimode optical fiber of an optic communications link or network. By providing an incoherent composite laser input beam to the fiber, modal noise due to coherence effects are virtually eliminated so that such effects no longer affect network performance. In addition, because the source is extended, a more uniform illumination of the fiber face is achieved. An exemplary multi-emitter laser would consist of an array of simultaneously driven emitting regions or cavities which operate in multiple longitudinal modes.

Abstract: A semiconductor laser characterized by having a combination index and gain guiding region in the optical cavity established between end facets of the laser.

Abstract: An improved collimating and conversion means is provided in a single system component that can be easily formed in a cost effective manner to convert an elliptically shaped collimated beam into a circular beam. The single component of this invention is a semiconductor laser beam collimator comprising means for collimating an output beam of radiation emitted from a semiconductor laser having a substantially elliptical cross sectional configuration and converting the emitted beam of radiation into a beam of circular cross sectional configuration, the means characterized by consisting of a graded-index (GRIN) rod or fiber with one end of the rod being beveled at an angle. The length of the GRIN rod bevel and the bevel angle are chosen according to the particular diameter and optical power of the emitted beam of the semiconductor laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: An injection laser is provided with quantum size effect transparent waveguiding. The laser includes an active layer having an active region wherein carrier recombination occurs under lasing conditions. The active layer has passive waveguide end regions between the active region and the laser end facets that are sufficiently thin in layer thickness to form a transparent waveguide having a quantum well effect so that radiative recombination will not occur in these regions.

Abstract: An optical system for collimating the radiation from a semiconductor laser, the laser near field having a single beam waist position in a first direction and having an elongated but phase coherent near field emitting pattern in a second direction which forms a far field low divergence beam pattern, the optical system characterized by a lens system for imaging said near field of said single beam waist position in the first spatial direction while imaging the elongated, phase coherent far field radiation pattern in the second direction. The laser is a multi-emitter or broad emitter semiconductor laser capable of producing one or more output beams. The lens system may include focusing optics to focus radiation in the near field pattern emitted from the laser in the first direction and in the far field pattern of radiation emitted from the laser in the second direction.

Abstract: An optical scanner with a thin waveguide medium on a substrate includes means to couple a wide collimated beam of radiation into one end of the medium. A periodic array of substantially parallel, spaced electrodes are associated with one major surface of the medium. At least a portion of their electrode lengths extend in a direction substantially parallel with the direction of radiation propagating through the medium. Supply means is provided to apply voltages in a pattern to the electrodes which varies from one electrode to the next adjacent electrode to a predetermined value over several of the electrodes and the same pattern of voltages or a similar pattern of different voltages is applied over several of the next adjacent electrodes up to the predetermined value. In this manner, the pattern is completed across the electrode array to produce a corresponding approximation of a desired phase retardation along a phase front of the propagating radiation in the medium.

Abstract: An injection laser includes a plurality of contiguous semiconductor layers deposited on a substrate, one of the layers being an active layer and having a lower bandgap and higher index of refraction relative to at least cladding layers immediately adjacent to the active layer. The active layer is provided with an active region to permit carrier recombination and support radiation propagating under lasing conditions in a optical waveguide cavity established between transverse end facets of the laser. Means is incorporated on and into the surface of the laser to form a current confinement region to the active region. The extremities of the active region fall short of the end facets so that the regions of the active layer between the active region function as a passive waveguide for the propagating radiation in the optical cavity.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: A linear array of injection diode lasers formed on a common substrate is utilized to provide modulated scanning beams for a photosensitive medium. A scanning device, preferably a multifaceted mirror polygon driven at a constant speed, is placed in the optical path between the array and the photosensitive medium, as is a focusing lens. To provide additive exposure intensity the plane of the emitting surface of the array is oriented relative to the scanning device so that all of the beams emitted by the array are caused to illuminate the same scan line of the photosensitive medium whereby each beam scans the same data spots on the same line of the photosensitive medium such that additive exposure of those spots is achieved.

Abstract: In a semiconductor injection laser with a nonplanar pattern in the substrate, growth of the plurality of layers comprising the laser structure is accomplished in vapor phase epitaxy to produce a lateral spatial thickness variation (LSTV) in the active region of the laser. The LSTV profile is one of or combination of the profiles disclosed in FIG. 2, producing an effective, although small, lateral refractive index variation in the active region, thereby permitting the maintenance of the lowest order transverse mode along the plane of the active region.

Abstract: A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.