Patents by Inventor Donald W. Nelson
Donald W. Nelson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220181456Abstract: An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least one of the plurality of transistor devices is coupled to the gated supply grid. A method including providing a supply from a package substrate to power gate transistors in a device layer of a circuit structure, the transistors coupled to circuitry operable to receive a gated supply from the power gate transistors; and distributing the gated supply from the power gate transistors to the circuitry using a grid on an underside of the device layer.Type: ApplicationFiled: February 28, 2022Publication date: June 9, 2022Inventor: Donald W. NELSON
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Publication number: 20220140128Abstract: An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.Type: ApplicationFiled: January 19, 2022Publication date: May 5, 2022Inventors: Patrick MORROW, Kimin JUN, Il-Seok SON, Donald W. NELSON
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Publication number: 20220140127Abstract: An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.Type: ApplicationFiled: January 18, 2022Publication date: May 5, 2022Inventors: Patrick MORROW, Kimin JUN, Il-Seok SON, Donald W. NELSON
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Patent number: 11296197Abstract: An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least one of the plurality of transistor devices is coupled to the gated supply grid. A method including providing a supply from a package substrate to power gate transistors in a device layer of a circuit structure, the transistors coupled to circuitry operable to receive a gated supply from the power gate transistors; and distributing the gated supply from the power gate transistors to the circuitry using a grid on an underside of the device layer.Type: GrantFiled: September 25, 2015Date of Patent: April 5, 2022Assignee: Intel CorporationInventor: Donald W. Nelson
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Patent number: 11282861Abstract: A dynamic logic circuit including a first transistor within a first device stratum of a substrate; and a second transistor within a second device stratum of the substrate that is different from the first device stratum, wherein the first transistor and the second transistor share a common gate electrode. A method including disposing a second semiconductor body of a second transistor on a first semiconductor body of a first transistor in a first device stratum on a substrate, the second semiconductor body defining a second device stratum; and forming a common gate electrode on each of the semiconductor body and the second semiconductor body.Type: GrantFiled: December 26, 2015Date of Patent: March 22, 2022Assignee: Intel CorporationInventors: Donald W. Nelson, Rishabh Mehandru
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Patent number: 11264493Abstract: An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.Type: GrantFiled: September 25, 2015Date of Patent: March 1, 2022Assignee: Intel CorporationInventors: Patrick Morrow, Kimin Jun, Il-Seok Son, Donald W. Nelson
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Patent number: 11049861Abstract: Techniques and mechanisms to provide capacitance with a memory cell of an integrated circuit. In an embodiment, a transistor of the memory cell includes structures variously formed in or on a first side of a semiconductor substrate. After processing to form the transistor structures, thinning is performed to expose a second side of the semiconductor substrate, the second side opposite the first side. Processing in or on the exposed second side of the semiconductor substrate is subsequently performed to form in the semiconductor substrate a capacitor that extends to couple to one of the transistor structures. In another embodiment, the capacitor is coupled to accumulate charge based on activation of a channel of the transistor. The capacitor is further coupled to send charge from the memory cell via the second side.Type: GrantFiled: September 25, 2015Date of Patent: June 29, 2021Assignee: Intel CorporationInventors: Aaron Lilak, Patrick Morrow, Rishabh Mehandru, Donald W. Nelson, Stephen M. Cea
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Patent number: 10892215Abstract: An apparatus including a circuit structure including a device stratum; and a contact coupled to a supply line and routed through the device stratum and coupled to at least one device on a first side. A method including providing a supply from a package substrate to at least one transistor in a device stratum of a circuit structure; and distributing the supply to the at least one transistor using a supply line on an underside of the device stratum and contacting the at least one transistor on a device side by routing a contact from the supply line through the device stratum. A system including a package substrate, and a die including at least one supply line disposed on an underside of a device stratum and routed through the device stratum and coupled to at least one of a plurality of transistor devices on the device side.Type: GrantFiled: May 9, 2019Date of Patent: January 12, 2021Assignee: Intel CorporationInventors: Donald W. Nelson, Mark T. Bohr, Patrick Morrow
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Patent number: 10700039Abstract: A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.Type: GrantFiled: June 16, 2014Date of Patent: June 30, 2020Assignee: Intel CorporationInventors: Donald W. Nelson, M. Clair Webb, Patrick Morrow, Kimin Jun
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Patent number: 10658291Abstract: A method including forming a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and forming contact points to the second plurality of interconnects, the contact points operable for connection to an external source. An apparatus including a substrate including a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and contact points coupled to the second plurality of interconnects, the contact points operable for connection to an external source.Type: GrantFiled: December 20, 2018Date of Patent: May 19, 2020Assignee: Intel CorporationInventors: Donald W. Nelson, Patrick Morrow, Kimin Jun
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Patent number: 10578970Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: GrantFiled: January 18, 2019Date of Patent: March 3, 2020Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Publication number: 20200066854Abstract: An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least one of the plurality of transistor devices is coupled to the gated supply grid. A method including providing a supply from a package substrate to power gate transistors in a device layer of a circuit structure, the transistors coupled to circuitry operable to receive a gated supply from the power gate transistors; and distributing the gated supply from the power gate transistors to the circuitry using a grid on an underside of the device layer.Type: ApplicationFiled: September 25, 2015Publication date: February 27, 2020Inventor: Donald W. NELSON
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Patent number: 10490542Abstract: An integrated circuit layout is described that uses a library cells with alternating conducting lines. One embodiment includes a first cell and a second cell, the second cell being adjacent to the first cell. The first cell has a first plurality of conductive lines, a first portion of the first plurality having line ends that are a first distance from the second cell. The second cell has a second plurality of conductive lines, the conductive lines being parallel to and aligned with the conductive lines in the first cell, a second portion of the second plurality having line ends that are a second distance from the first cell. The first distance is shorter than the second distance.Type: GrantFiled: June 24, 2015Date of Patent: November 26, 2019Assignee: Intel CorporationInventors: Donald W. Nelson, Patrick Morrow, Steven M. Burns
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Publication number: 20190355756Abstract: A dynamic logic circuit including a first transistor within a first device stratum of a substrate; and a second transistor within a second device stratum of the substrate that is different from the first device stratum, wherein the first transistor and the second transistor share a common gate electrode. A method including disposing a second semiconductor body of a second transistor on a first semiconductor body of a first transistor in a first device stratum on a substrate, the second semiconductor body defining a second device stratum; and forming a common gate electrode on each of the semiconductor body and the second semiconductor body.Type: ApplicationFiled: December 26, 2015Publication date: November 21, 2019Inventors: Donald W. NELSON, Rishabh MEHANDRU
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Publication number: 20190267316Abstract: An apparatus including a circuit structure including a device stratum; and a contact coupled to a supply line and routed through the device stratum and coupled to at least one device on a first side. A method including providing a supply from a package substrate to at least one transistor in a device stratum of a circuit structure; and distributing the supply to the at least one transistor using a supply line on an underside of the device stratum and contacting the at least one transistor on a device side by routing a contact from the supply line through the device stratum. A system including a package substrate, and a die including at least one supply line disposed on an underside of a device stratum and routed through the device stratum and coupled to at least one of a plurality of transistor devices on the device side.Type: ApplicationFiled: May 9, 2019Publication date: August 29, 2019Inventors: Donald W. NELSON, Mark T. BOHR, Patrick MORROW
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Patent number: 10386722Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.Type: GrantFiled: December 19, 2014Date of Patent: August 20, 2019Assignee: Intel CorporationInventors: Yan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
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Patent number: 10332893Abstract: Techniques and mechanisms for exchanging signals with one or more transistors at a front side of a semiconductor substrate. In an embodiment, an integrated circuit include a cell—such as a static random access memory (SRAM) cell—comprising transistor structures variously disposed in or on a first side of a substrate. After fabrication of such transistor structures, substrate material may be thinned to expose a second side of the substrate, opposite the first side. A first interconnect and a second interconnect are coupled each to exchange a signal or a voltage. In another embodiment, respective portions of the first interconnect and the second interconnect extend on opposite sides of the substrate, wherein the first side and the second side each extend between such interconnect portions. Positioning of interconnect structures on opposite sides of the substrate allow for performance improvements due to low interconnect resistances.Type: GrantFiled: September 25, 2015Date of Patent: June 25, 2019Assignee: Intel CorporationInventors: Donald W. Nelson, Eric A. Karl
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Patent number: 10325840Abstract: An apparatus including a circuit structure including a device stratum; and a contact coupled to a supply line and routed through the device stratum and coupled to at least one device on a first side. A method including providing a supply from a package substrate to at least one transistor in a device stratum of a circuit structure; and distributing the supply to the at least one transistor using a supply line on an underside of the device stratum and contacting the at least one transistor on a device side by routing a contact from the supply line through the device stratum. A system including a package substrate, and a die including at least one supply line disposed on an underside of a device stratum and routed through the device stratum and coupled to at least one of a plurality of transistor devices on the device side.Type: GrantFiled: September 25, 2015Date of Patent: June 18, 2019Assignee: Intel CorporationInventors: Donald W. Nelson, Mark T. Bohr, Patrick Morrow
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Publication number: 20190155160Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.Type: ApplicationFiled: January 18, 2019Publication date: May 23, 2019Inventors: Yan A. BORODOVSKY, Donald W. NELSON, Mark C. PHILLIPS
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Patent number: 10297592Abstract: Monolithic 3D ICs employing one or more local inter-level interconnect integrated intimately with at least one structure of at least one transistor on at least one transistor level within the 3D IC. In certain embodiments the local inter-level interconnect intersects a gate electrode or a source/drain region of at least one transistor and extends through at least one inter-level dielectric layer disposed between a first and second transistor level in the 3D IC. Local inter-level interconnects may advantageously make a direct vertical connection between transistors in different levels of the 3D IC without being routed laterally around the footprint (i.e., lateral, or planar, area) of either the overlying or underlying transistor level that is interconnected.Type: GrantFiled: June 16, 2017Date of Patent: May 21, 2019Assignee: Intel CorporationInventors: Patrick Morrow, Kimin Jun, M. Clair Webb, Donald W. Nelson