Abstract: A method for producing a bis(fluorosulfonyl)imide lithium salt is disclosed. The method includes the steps of: (a) reacting bis(chlorosulfonyl)imide with NH4F(HF)n (n=0-10) to prepare ammonium bis(fluorosulfonyl)imide; and (b) reacting the ammonium bis(fluorosulfonyl)imide with a lithium base, wherein in at least one of steps (a) and (b), after the reaction, a process of adding an alkoxy trialkyl silane to the reaction solution to remove a fluorine anion is performed.

Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

Abstract: Provided are a memory detection method, a computer device and a storage medium. The method includes: initializing all storage units in a storage unit array; determining a plurality of target wordlines, two adjacent target wordlines being provided with a plurality of interfering wordlines therebetween; turning on the target wordlines, and performing a write operation on storage units connected to the target wordlines; performing repeatedly turn-on and turn-off of the interfering wordlines for a plurality of times; and performing a read operation on the storage units connected to the target wordlines. A write operation is performed on the storage units connected to the interfering wordlines by means of forced current sinking.

Abstract: Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

Abstract: A foldable terminal device includes a feed source, a first part, and a second part. The first part is configured with a first antenna element that is fed by the first feed source. The second part is configured with a second antenna element that is coupled to the first antenna element for coupled feeding when the foldable terminal device is folded. An operating frequency band of the second antenna element includes an operating frequency band of the first antenna element.

Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.

Abstract: A method for preparing a carbon-coated ternary positive electrode material has steps of preparing a ternary positive electrode material precursor, and preparing a suspension of the ternary positive electrode material precursor. Lithium acrylate is added to the suspension of the ternary positive electrode material precursor according to the molar ratio of Li:(Ni+Co+Mn) being 1.03-1.05:1. Ammonium persulphate is added to the lithium acrylate-containing suspension of the ternary positive electrode material precursor, so that the lithium acrylate undergoes a polymerisation reaction and a suspension of a lithium polyacrylate-coated ternary positive electrode material precursor is obtained. The suspension of the lithium polyacrylate-coated ternary positive electrode material precursor is dried to obtain spherical particles. The lithium polyacrylate-coated ternary positive electrode material precursor particles are sintered to obtain a carbon-coated ternary positive electrode material.

Abstract: The present invention provides a compound of Formula (I) and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.

Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.

Abstract: The present invention provides a compound of Formula (I) and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.

Abstract: A structure of semiconductor device includes a substrate. A first dielectric layer is disposed over the substrate, wherein the first dielectric layer has an air trench. A plurality of trench metal layers is disposed in the first dielectric layer, wherein the air trench is between adjacent two of the trench metal layers and without contacting to the trench metal layers. A liner layer is disposed on the first dielectric layer to cover the trench metal layers and a profile of the air trench. An etching stop layer is disposed on the liner layer, wherein the etching stop layer seals the air trench to form an air gap between the adjacent two of the trench metal layers.

Abstract: A heat-dissipating device configured to cool the battery pack of an electric vehicle includes a coolant circulating pump and a tank. The coolant circulating pump is configured to engage with the one or more heat dissipation pipes of the electric vehicle and communicate with the one or more heat dissipation pipes. The tank is configured to contain coolant which includes phase change material. When cooling is required, for example during battery recharging, the coolant circulating pump is configured to inject the coolant in the tank into the one or more heat dissipation pipes via the coolant inlet, drive the coolant to flow in the one or more heat dissipation pipes, and take the coolant out from the one or more heat dissipation pipes via the coolant outlet to the exterior. A related electric vehicle and a related heat dissipation method are also provided.

Abstract: A method for preparing a carbon-coated ternary positive electrode material has steps of preparing a ternary positive electrode material precursor, and preparing a suspension of the ternary positive electrode material precursor. Lithium acrylate is added to the suspension of the ternary positive electrode material precursor according to the molar ratio of Li:(Ni+Co+Mn) being 1.03-1.05:1. Ammonium persulphate is added to the lithium acrylate-containing suspension of the ternary positive electrode material precursor, so that the lithium acrylate undergoes a polymerisation reaction and a suspension of a lithium polyacrylate-coated ternary positive electrode material precursor is obtained. The suspension of the lithium polyacrylate-coated ternary positive electrode material precursor is dried to obtain spherical particles. The lithium polyacrylate-coated ternary positive electrode material precursor particles are sintered to obtain a carbon-coated ternary positive electrode material.

Abstract: A heat management structure able to disperse heat but also able to retain a proper working heat includes a heat dissipation layer, a receiving member, and a heat pipe. The receiving member is configured to receive a heating member. Ends of the heat pipe are coupled to the heat dissipation layer and the receiving member. A related unmanned aerial vehicle is also provided.

Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate including a hard mask layer and a sacrificial layer is provided. A plurality of mandrel patterns are formed on the substrate. A spacer is respectively formed on sidewalls of the mandrel patterns. The mandrel patterns are removed to form a plurality of spacer patterns directly formed on the sacrificial layer. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion of the first blocking layers are formed on the substrate. The sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers, and the second blocking layers serving as etching masks to form a patterned hard mask layer on the substrate.

Abstract: The present invention relates to a compound represented by formula (I): and pharmaceutically acceptable salts thereof are disclosed as useful for treating or preventing diabetes, hyperlipidemia, obesity, inflammation related disorders, and related diseases and conditions. The compounds are useful as agonists of the G-protein coupled receptor GPR120. Pharmaceutical compositions and methods of treatment are also included.

Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate including a hard mask layer and a sacrificial layer is provided. A plurality of mandrel patterns are formed on the substrate. A spacer is respectively formed on sidewalls of the mandrel patterns. The mandrel patterns are removed to form a plurality of spacer patterns directly formed on the sacrificial layer. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion of the first blocking layers are formed on the substrate. The sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers, and the second blocking layers serving as etching masks to form a patterned hard mask layer on the substrate.

Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.

Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.

Abstract: Provided is a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, and more particularly to a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, in which the binder has excellent stiffness and elasticity. To this end, the polymer binder that is physically crosslinked with a crosslinking agent by acid-base interaction may include a crosslinking agent that is physically bound with the binder for silicon anode by reversible acid-base interaction with the binder for silicon anode.