Patents by Inventor Dong Chu

Dong Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12286627
    Abstract: The present invention discloses a method for preventing dsRNA bacterial solutions from being degraded by UV light and application thereof in control of silverleaf whiteflies which relates to technical field of pest control. The method for preventing dsRNA bacterial solutions from being degraded by UV light of present invention is to mix dsRNA bacterial solutions with nanomaterial solutions to prepare mixed solutions of nanomaterial as well as dsRNA bacterial solutions, wherein the nanomaterial is one of MON, Fe3O4, TiC and SiC. Nanomaterials are used to protect dsRNA bacterial solutions from being degraded by UV light, so that lethal effect of dsGawky on silverleaf whiteflies can achieve purpose of pest control. The method is easy to operate, low in cost, good in effectiveness as well as sensitivity, high in insecticidal efficiency, and has other advantages such as environmental friendliness as well as good application prospects.
    Type: Grant
    Filed: October 29, 2024
    Date of Patent: April 29, 2025
    Assignee: QINGDAO AGRICULTURAL UNIVERSITY
    Inventors: Dong Chu, Zhishao Cen, Lili Wang, Xinxi Ren, Yunli Tao
  • Patent number: 12212686
    Abstract: The present invention relates to the technical field of block chains, and discloses a data security management method, system and storage medium for smart contract based on block chain network, comprising storing information of at least one public key in asymmetric public and private keys synchronously when generating the smart contract; triggering a data management request, establishing block chain network communication, calling the smart contract to generate validation data, rendering timeliness management to the validation data, sending the same to a data management request end and calling at least one private key, signing the validation data, reorganizing the same with data to be managed and making corresponding management operations; data modifications caused by malicious attacks to data in the contract due to disclosure of the contract or other security defects are addressed, safety of data in the chains is efficiently promised and the present invention is of realistic utility value.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: January 28, 2025
    Assignee: HEFEI YIWUYIZHENG TECHNOLOGY CO., LTD.
    Inventors: Dong Chu, Xinyu Wang, Rong Zhang, Li Zhao, Yayun He
  • Publication number: 20240214214
    Abstract: The present invention relates to the technical field of block chains, and discloses a data security management method, system and storage medium for smart contract based on block chain network, comprising storing information of at least one public key in asymmetric public and private keys synchronously when generating the smart contract; triggering a data management request, establishing block chain network communication, calling the smart contract to generate validation data, rendering timeliness management to the validation data, sending the same to a data management request end and calling at least one private key, signing the validation data, reorganizing the same with data to be managed and making corresponding management operations; data modifications caused by malicious attacks to data in the contract due to disclosure of the contract or other security defects are addressed, safety of data in the chains is efficiently promised and the present invention is of realistic utility value.
    Type: Application
    Filed: August 5, 2021
    Publication date: June 27, 2024
    Inventors: Dong CHU, Xinyu WANG, Rong ZHANG, Li ZHAO, Yayun HE
  • Patent number: 11014920
    Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: May 25, 2021
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Jacqueline D. Hicks, Brian Alexander McKittrick, Brent R. Whitehead, Matthew Lombardo, Xiaoqing Han, Jerry A. Taylor, Hong Dong Chu, Sung-Sau So, Peter Orth, Zhicai Wu
  • Patent number: 10916767
    Abstract: A method for preparing a carbon-coated ternary positive electrode material has steps of preparing a ternary positive electrode material precursor, and preparing a suspension of the ternary positive electrode material precursor. Lithium acrylate is added to the suspension of the ternary positive electrode material precursor according to the molar ratio of Li:(Ni+Co+Mn) being 1.03-1.05:1. Ammonium persulphate is added to the lithium acrylate-containing suspension of the ternary positive electrode material precursor, so that the lithium acrylate undergoes a polymerisation reaction and a suspension of a lithium polyacrylate-coated ternary positive electrode material precursor is obtained. The suspension of the lithium polyacrylate-coated ternary positive electrode material precursor is dried to obtain spherical particles. The lithium polyacrylate-coated ternary positive electrode material precursor particles are sintered to obtain a carbon-coated ternary positive electrode material.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: February 9, 2021
    Assignee: Graduate School at Shenzhen, Tsinghua University
    Inventors: Xiao-Dong Chu, Jian-Fu He, Bao-Hua Li, Yan-Bing He, Yu-Xiu Liu, Hong-Da Du, Fei-Yu Kang
  • Patent number: 10875851
    Abstract: The present invention provides a compound of Formula (I) and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: December 29, 2020
    Assignee: MERCK SHARP & DOHME CORP.
    Inventors: Ashwin U. Rao, Brian Alexander McKittrick, Matthew Lombardo, Jacqueline D. Hicks, Amy Bittner McCracken, Hong Dong Chu, Sung-Sau So, Peter Orth, Zhicai Wu, Ping Lan, John S. Debenham, Brent R. Whitehead, Jerry A. Taylor, Zhongxiang Sun, Revathi Reddy Katipally, Jonathan E. Gable, Markus K. Dahlgren, Sathesh P. Bhat
  • Publication number: 20200262831
    Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.
    Type: Application
    Filed: November 13, 2017
    Publication date: August 20, 2020
    Applicant: Merck Sharp & Dohme Corp.
    Inventors: Jacqueline D. Hicks, Brian Alexander McKittrick, Brent R. Whitehead, Matthew Lombardo, Xiaoqing Han, Jerry A. Taylor, Hong Dong Chu, Sung-Sau So, Peter Orth, Zhicai Wu
  • Publication number: 20190352294
    Abstract: The present invention provides a compound of Formula (I) and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIIa inhibitors.
    Type: Application
    Filed: November 13, 2017
    Publication date: November 21, 2019
    Applicant: Merck Sharp & Dohme Corp.
    Inventors: Ashwin U. Rao, Brian Alexander McKittrick, Matthew Lombardo, Jacqueline D. Hicks, Amy Bittner McCracken, Hong Dong Chu, Sung-Sau So, Peter Orth, Zhicai Wu, Ping Lan, John S. Debenham, Brent R. Whitehead, Jerry A. Taylor, Zhongxiang Sun, Revathi Reddy Katipally, Jonathan E. Gable, Markus K. Dahlgren, Sathesh P. Bhat
  • Patent number: 10438843
    Abstract: A structure of semiconductor device includes a substrate. A first dielectric layer is disposed over the substrate, wherein the first dielectric layer has an air trench. A plurality of trench metal layers is disposed in the first dielectric layer, wherein the air trench is between adjacent two of the trench metal layers and without contacting to the trench metal layers. A liner layer is disposed on the first dielectric layer to cover the trench metal layers and a profile of the air trench. An etching stop layer is disposed on the liner layer, wherein the etching stop layer seals the air trench to form an air gap between the adjacent two of the trench metal layers.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: October 8, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Tzu-Hao Fu, Ci-Dong Chu, Tsung-Yin Hsieh, Chih-Sheng Chang
  • Publication number: 20190299812
    Abstract: A heat-dissipating device configured to cool the battery pack of an electric vehicle includes a coolant circulating pump and a tank. The coolant circulating pump is configured to engage with the one or more heat dissipation pipes of the electric vehicle and communicate with the one or more heat dissipation pipes. The tank is configured to contain coolant which includes phase change material. When cooling is required, for example during battery recharging, the coolant circulating pump is configured to inject the coolant in the tank into the one or more heat dissipation pipes via the coolant inlet, drive the coolant to flow in the one or more heat dissipation pipes, and take the coolant out from the one or more heat dissipation pipes via the coolant outlet to the exterior. A related electric vehicle and a related heat dissipation method are also provided.
    Type: Application
    Filed: May 20, 2019
    Publication date: October 3, 2019
    Inventors: HONG-DA DU, ZHEN-WEN JIANG, WEI CHEN, LIN GAN, JIA LI, XIN-WEI ZHENG, CHENG-JUN XU, XIAO-DONG CHU, YOU-WEI YAO, BAO-HUA LI, QUAN-HONG YANG, YAN-BING HE, FEI-YU KANG
  • Publication number: 20180226639
    Abstract: A method for preparing a carbon-coated ternary positive electrode material has steps of preparing a ternary positive electrode material precursor, and preparing a suspension of the ternary positive electrode material precursor. Lithium acrylate is added to the suspension of the ternary positive electrode material precursor according to the molar ratio of Li:(Ni+Co+Mn) being 1.03-1.05:1. Ammonium persulphate is added to the lithium acrylate-containing suspension of the ternary positive electrode material precursor, so that the lithium acrylate undergoes a polymerisation reaction and a suspension of a lithium polyacrylate-coated ternary positive electrode material precursor is obtained. The suspension of the lithium polyacrylate-coated ternary positive electrode material precursor is dried to obtain spherical particles. The lithium polyacrylate-coated ternary positive electrode material precursor particles are sintered to obtain a carbon-coated ternary positive electrode material.
    Type: Application
    Filed: May 27, 2016
    Publication date: August 9, 2018
    Inventors: XIAO-DONG CHU, JIAN-FU HE, BAO-HUA LI, YAN-BING HE, YU-XIU LIU, HONG-DA DU, FEI-YU KANG
  • Publication number: 20180201388
    Abstract: A heat management structure able to disperse heat but also able to retain a proper working heat includes a heat dissipation layer, a receiving member, and a heat pipe. The receiving member is configured to receive a heating member. Ends of the heat pipe are coupled to the heat dissipation layer and the receiving member. A related unmanned aerial vehicle is also provided.
    Type: Application
    Filed: April 19, 2017
    Publication date: July 19, 2018
    Inventors: HONG-DA DU, WEI CHEN, JING-GUO YANG, LIN GAN, JIA LI, CHENG-JUN XU, XIAO-DONG CHU, YOU-WEI YAO, BAO-HUA LI, QUAN-HONG YANG, YAN-BING HE, FEI-YU KANG
  • Patent number: 9875927
    Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate including a hard mask layer and a sacrificial layer is provided. A plurality of mandrel patterns are formed on the substrate. A spacer is respectively formed on sidewalls of the mandrel patterns. The mandrel patterns are removed to form a plurality of spacer patterns directly formed on the sacrificial layer. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion of the first blocking layers are formed on the substrate. The sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers, and the second blocking layers serving as etching masks to form a patterned hard mask layer on the substrate.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: January 23, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tzu-Hao Fu, Home-Been Cheng, Ci-Dong Chu, Tsung-Yin Hsieh
  • Patent number: 9708270
    Abstract: The present invention relates to a compound represented by formula (I): and pharmaceutically acceptable salts thereof are disclosed as useful for treating or preventing diabetes, hyperlipidemia, obesity, inflammation related disorders, and related diseases and conditions. The compounds are useful as agonists of the G-protein coupled receptor GPR120. Pharmaceutical compositions and methods of treatment are also included.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: July 18, 2017
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Mariappan Chelliah, Hong Dong Chu, Jason M. Cox, John S. Debenham, Keith Eagen, Ping Lan, Clare London, Michael A. Plotkin, Unmesh Shah, Christopher Joseph Sinz, Zhongxiang Sun, Henry M. Vaccaro, Srikanth Venkatraman
  • Publication number: 20170069529
    Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate including a hard mask layer and a sacrificial layer is provided. A plurality of mandrel patterns are formed on the substrate. A spacer is respectively formed on sidewalls of the mandrel patterns. The mandrel patterns are removed to form a plurality of spacer patterns directly formed on the sacrificial layer. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion of the first blocking layers are formed on the substrate. The sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers, and the second blocking layers serving as etching masks to form a patterned hard mask layer on the substrate.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 9, 2017
    Inventors: Tzu-Hao Fu, Home-Been Cheng, Ci-Dong Chu, Tsung-Yin Hsieh
  • Patent number: 9536751
    Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: January 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tzu-Hao Fu, Home-Been Cheng, Ci-Dong Chu, Tsung-Yin Hsieh
  • Publication number: 20160351410
    Abstract: A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.
    Type: Application
    Filed: June 16, 2015
    Publication date: December 1, 2016
    Inventors: Tzu-Hao Fu, Home-Been Cheng, Ci-Dong Chu, Tsung-Yin Hsieh
  • Patent number: 9437875
    Abstract: Provided is a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, and more particularly to a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, in which the binder has excellent stiffness and elasticity. To this end, the polymer binder that is physically crosslinked with a crosslinking agent by acid-base interaction may include a crosslinking agent that is physically bound with the binder for silicon anode by reversible acid-base interaction with the binder for silicon anode.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: September 6, 2016
    Assignee: INCHEON UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
    Inventors: Tae Hyun Kim, Sang Hyun Lim, Ho Dong Chu, Kuk Joo Lee
  • Publication number: 20160233511
    Abstract: Provided is a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, and more particularly to a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, in which the binder has excellent stiffness and elasticity. To this end, the polymer binder that is physically crosslinked with a crosslinking agent by acid-base interaction may include a crosslinking agent that is physically bound with the binder for silicon anode by reversible acid-base interaction with the binder for silicon anode.
    Type: Application
    Filed: April 9, 2015
    Publication date: August 11, 2016
    Inventors: Tae Hyun KIM, Sang Hyun LIM, Ho Dong CHU, Kuk Joo LEE
  • Patent number: 9233925
    Abstract: The present invention provides novel processes for the preparation of N-substituted benzamides having the formula VIc: In some embodiments, the invention provides a process for preparation of roflumilast and other pharmaceutically active species. Novel compounds, including intermediates for the synthesis of roflumilast, are also provided.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: January 12, 2016
    Assignee: ScinoPharm (Changshu) Pharmaceuticals, Ltd.
    Inventors: Yi-Jing Chen, Stanislaw Pikul, Shen-Chun Kuo, Guo-dong Chu