Abstract: Filters shaped differently from those commonly used in WDM Mux/DeMux optical devices are described. Different from the prior art devices that commonly use filters shaped in cuboid, the filters in the embodiment of the present invention are shaped in parallelepiped. In other words, a cross section of such filter is not in parallelogram. According to one embodiment of the present invention, a filter is so cut that a cross section thereof presents a cutting angle not being 90 degrees. As a result, the filter is fully used in WDM Mux/DeMux optical devices. Such filters are advantageously used in compact optical modules.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.

Abstract: The present invention provides a method for manufacturing an anode active material for a lithium secondary battery comprising the following steps of: a) simultaneously mixing a first metallic salt aqueous solution including nickel, cobalt, manganese and optionally a transition metal, a chelating agent, and a basic aqueous solution in a reactor, and mixing with a lithium raw material and calcining to manufacture a center part including the compound of following Chemical Formula 1: Lix1[Ni1?y1?z1?w1Coy1Mnz1Mw1]O2??Chemical Formula 1 (wherein, 0.9?x1?1.3, 0.1?y1?0.3, 0.0?z1?0.3, 0?w1?0.

Abstract: The present invention relates to a method of comparing at least one chromosome or part thereof from a cell with a first karyotype with the corresponding chromosome or part thereof from a cell with a second karyotype.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.

Abstract: The present invention relates to a method of comparing at least one chromosome or part thereof from a cell with a first karyotype with the corresponding chromosome or part thereof from a cell with a second karyotype.