Abstract: A method of forming a mask structure for an extreme ultraviolet ray lithography (EUVL) process includes defining a substrate including a first area and a second area, such that the first area has a pattern structure configured to selectively transmit light for the EUVL process and the second area encloses the first area, forming a reflection layer on the substrate, the reflection layer including alternately stacked molybdenum layers and silicon layers on the substrate, forming a capping layer on the reflection layer, forming an absorption pattern on the capping layer, the absorption pattern including a central portion corresponding to the first area of the substrate and a peripheral portion corresponding to the second area of the substrate, and forming a blind layer on the peripheral portion of the absorption pattern.

Abstract: An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*?, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, ? denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*?, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, ? denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract: An inventive energy harvesting apparatus may include a ferromagnetic material and/or a shape memory alloys to convert thermal energy to mechanical energy to electrical energy. The apparatus is subjected to a thermal gradient to cause beams to bend thus creating stress/strain in a piezoelectric material, or creating magnetic flux in a magnetic path. The charges created in this process can be transferred to electrical batteries.

Abstract: A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.

Abstract: A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.

Abstract: In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions.

Abstract: An energy harvesting apparatus includes an inverse frequency rectifier structured to receive mechanical energy at a first frequency, and a solid state electromechanical transducer coupled to the inverse frequency rectifier t receive a force provided by the inverse frequency rectifier. The force, when provided by the inverse frequency rectifier, causes the solid state transducer to be subjected to a second frequency that is higher than the first frequency to thereby generate electrical power.

Abstract: An inventive energy harvesting apparatus may include a ferromagnetic material and/or a shape memory alloys to convert thermal energy to mechanical energy to electrical energy. The apparatus is subjected to a thermal gradient to cause beams to bend thus creating stress/strain in a piezoelectric material, or creating magnetic flux in a magnetic path. The charges created in this process can be transferred to electrical batteries.

Abstract: A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.

Abstract: A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Abstract: A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus and a method of cleaning optical elements included in the exposure apparatus. The EUV exposure apparatus includes: a light source system generating an exposure beam that comprises an EUV beam during exposure of a substrate and generating a cleaning beam having a longer wavelength than the exposure beam during cleaning of an optical element; an optical system adjusting and patterning the EUV beam and the cleaning beam generated by the light source system; a chamber accommodating the light source system and the optical system; and a molecular oxygen supply unit in communication with the chamber.

Abstract: The present invention relates to a method for expressing each of peptide antibiotics P5 3 and Anal3 35 having amphiphilicity and showing antibacterial, antifungal and anticancer activities 61, 63, 65, 67, 69, 71, on the microbial surface, using a vector containing outer membrane protein genes (pgsBCA) that are derived from Bacillus sp. strains and involved in the synthesis of poly-gamma-glutamate. Moreover, the present invention relates to lactic acid-forming bacteria having each of the peptide antibiotics P5 15 and Anal3 43 expressed on their surface, and the use thereof. According to the present invention, the peptide antibiotics can be expressed on the surface of various microorganisms transformed with the surface expression vectors. The inventive method for the surface expression of the peptide antibiotics allows the peptide antibiotics to be mass-produced without a purification process. Thus, the inventive method has very high industrial applicability.

Abstract: A polarization measuring device includes a diffraction grating and a detector. The diffraction grating is configured to diffract incident light to observe the polarization state of the light. The detector is configured to receive the light diffracted by the diffraction grating and display the polarization state of the light.

Abstract: The present invention relates to a method for expressing each of peptide antibiotics P5 3 and Ana13 35 having amphiphilicity and showing antibacterial, antifungal and anticancer activities 61, 63, 65, 67, 69, 71, on the microbial surface, using a vector containing outer membrane protein genes (pgsBCA) that are derived from Bacillus sp. strains and involved in the synthesis of poly-gamma-glutamate. Moreover, the present invention relates to lactic acid-forming bacteria having each of the peptide antibiotics P5 15 and Ana13 43 expressed on their surface, and the use thereof. According to the present invention, the peptide antibiotics can be expressed on the surface of various microorganisms transformed with the surface expression vectors. The inventive method for the surface expression of the peptide antibiotics allows the peptide antibiotics to be mass-produced without a purification process. Thus, the inventive method has very high industrial applicability.

Abstract: A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

Abstract: Disclosed herein is a point-diffraction interferometer which can inspect a surface quality of an optical system for extreme ultraviolet lithography using a high-order harmonic X-ray source with excellent coherence, and an apparatus and method for generating a high-order harmonic X-ray. The present invention uses a high-order harmonic X-ray beam as a coherence light source, thus remarkably reducing the size of an apparatus for generating a light source to approximately 1/100 of a device using a light source generated in a conventional synchrotron. Further, the present invention simplifies the construction of an interferometer by employing a thin foil in which a pinhole is formed through a drilling technique using high power femtosecond laser, thus increasing the industrial utility of the interferometer.

Abstract: The present invention relates to a method for expressing each of peptide antibiotics P5 3 and Anal3 35 having amphiphilicity and showing antibacterial, antifungal and anticancer activities 61, 63, 65, 67, 69, 71, on the microbial surface, using a vector containing outer membrane protein genes (pgsBCA) that are derived from Bacillus sp. strains and involved in the synthesis of poly-gamma-glutamate. Moreover, the present invention relates to lactic acid-forming bacteria having each of the peptide antibiotics P5 15 and Anal3 43 expressed on their surface, and the use thereof. According to the present invention, the peptide antibiotics can be expressed on the surface of various microorganisms transformed with the surface expression vectors. The inventive method for the surface expression of the peptide antibiotics allows the peptide antibiotics to be mass-produced without a purification process. Thus, the inventive method has very high industrial applicability.