Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

Abstract: A drilling apparatus is provided. The drilling apparatus according to one aspect of the present invention comprises: first and second moving modules; first to third drawworks for vertically moving the first and second moving modules; a wire for successively connecting the first drawwork, the first moving module, the second drawwork, the second moving module and the third drawwork; a first fixing drum positioned between the first drawwork and the first moving module so as to support the wire; and a second fixing drum positioned between the second moving module and the third drawwork so as to support the wire.

Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Abstract: A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.

Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.

Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.

Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

Abstract: A drilling apparatus is provided. The drilling apparatus according to one aspect of the present invention comprises: first and second moving modules; first to third drawworks for vertically moving the first and second moving modules; a wire for successively connecting the first drawwork, the first moving module, the second drawwork, the second moving module and the third drawwork; a first fixing drum positioned between the first drawwork and the first moving module so as to support the wire; and a second fixing drum positioned between the second moving module and the third drawwork so as to support the wire.

Abstract: An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

Abstract: The present invention relates to a probe for detecting drug-resistant gram-positive pathogens, a probe set, and a method of detecting drug-resistant gram-positive pathogens using them. The probe for detecting drug-resistant gram-positive pathogens, the probe set, and the method for detecting drug-resistant gram-positive pathogens using them according to the present invention can contribute not only to shortening a detection time, compared to a conventional detection time, by optimizing a hybridization time, but also to increasing the sensitivity of detection by pre-amplification of the specific sequence of drug-resistant gram-positive pathogens, and thereby multiple detections of drug-resistant gram-positive pathogens can be accurately and efficiently performed.

Abstract: A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

Abstract: An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.