Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Disclosed is a method of manufacturing a graphene composite including an ultrasonic-wave pulverization post-treatment process. The method includes radiating a microwave on a mixture of graphite oxide and a conducting agent, dispersing a resultant material, obtained during the radiating the microwave, in a liquid and performing ultrasonic-wave pulverization, and freeze-drying particles subjected to the ultrasonic-wave pulverization. In the present invention, the post-treatment process is added to the method of manufacturing the graphene composite including the reduced graphene oxide using the graphite oxide, thereby manufacturing a graphene composite having improved bindability with spherical activated carbon used to manufacture an active material. Further, the post-treated graphene composite is used to manufacture the active material and the supercapacitor, and accordingly, the active material can be thinly and densely applied to provide a supercapacitor having improved performance.

Abstract: The present disclosure relates to a metal oxide-carbonaceous hybrid thin film, a preparing method of the metal oxide-carbonaceous hybrid thin film, and a dye-sensitized solar cell using a photoelectrode including the metal oxide-carbonaceous hybrid thin film.

Abstract: Disclosed is a diagnostic method of diagnosing sticking of a canister purge valve comprising steps of: controlling opening and closing of the canister purge valve in order to diagnose sticking of the canister purge valve and calculating a throttle learning value for acquiring variation in an air inflow amount based on an intake air pressure sensor and an throttle opening amount in each of control sections; comparing the throttle learning values calculated in each of control sections and acquiring variation in the air inflow amount flowing from the canister purge valve when the canister purge valve is opened and closed; and determining whether the canister purge valve is stuck or not based on the variation in the air inflow amount.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: A light emitting device includes a substrate and a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer provided in a first direction on the substrate. A first electrode layer is provided over the first conductive type semiconductor layer, and a second electrode layer is provided in a second direction over the second conductive type semiconductor layer. The second electrode layer has an energy band gap wider than an energy band gap of the active layer.

Abstract: Disclosed is a flow-type energy storage device having an improved flow of fluid. The flow-type energy storage device stores electricity using a fluidic material, and includes a reaction region in which charge-discharge reaction of electricity is performed by the fluidic material, wherein the reaction region has an octagonal cross-section. The shape of the reaction region is controlled to thus improve the flowability of the fluidic material, thereby providing a flow-type energy storage device that has almost constant electrical properties even when a charging and discharging cycle is repeatedly performed. Further, the structures of an inlet and an outlet are not complicated and a separate part for controlling the flow of fluid is not used in the device, and accordingly, additional costs are not incurred during a process of manufacturing the flow-type energy storage device.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: A communication method is provided. The communication method includes comparing an amount of current consumed by a first communication module which operates a first channel with an amount of current consumed by a second communication module which operates a second channel and determining at least one of the first channel or the second channel as a primary component carrier (PCC) according to the compared result.

Abstract: There is provided a hybrid nanostructure including Au nanoparticles, a photoelectrode for a solar cell having the hybrid nanostructure, and a solar cell including the photoelectrode.

Abstract: Disclosed is an apparatus and method for detecting a leakage of fuel evaporative gas in a vehicle fuel system. When preset condition information is satisfied during operation of a vehicle, the apparatus and method may control a canister purge valve, and generate detection information on a leakage of fuel evaporative gas based on switch state information of a pressure switch provided in a natural vacuum leakage detection (NVLD) module, thereby detecting a leakage of the fuel evaporative gas during operation.

Abstract: A light-emitting device, according to one embodiment, comprises a light-emitting structure having a silicon substrate, a first conductive type semiconductor layer disposed on the silicon substrate, an active layer, and a second conductive type semiconductor layer, a conductive layer facing the active layer between the silicon substrate and the first conductive type semiconductor layer, a first electrode which is disposed on the first conductive type semiconductor layer, penetrates or bypasses the first conductive type semiconductor layer, and is electrically connected to the conductive layer, and a second electrode disposed on the second conductive type semiconductor layer.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: The present disclosure relates to a metal oxide-carbonaceous hybrid thin film, a preparing method of the metal oxide-carbonaceous hybrid thin film, and a dye-sensitized solar cell using a photoelectrode including the metal oxide-carbonaceous hybrid thin film.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1?x)N (0<x<1) and a quantum well layer including AlyGa(1?y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: A light emitting device includes a substrate and a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer provided in a first direction on the substrate. A first electrode layer is provided over the first conductive type semiconductor layer, and a second electrode layer is provided in a second direction over the second conductive type semiconductor layer. The second electrode layer has an energy band gap wider than an energy band gap of the active layer.

Abstract: There is provided a hybrid nanostructure including Au nanoparticles, a photoelectrode for a solar cell having the hybrid nanostructure, and a solar cell including the photoelectrode.

Abstract: The present disclosure relates to an apparatus and a method for performing a call connection in a portable terminal, by which it is possible to reduce the consumption of a battery of the portable terminal when a call connection is performed by the portable terminal including one RF unit and at least two SIM cards. The apparatus includes: at least two Subscriber Identity Module (SIM) cards; and a controller for performing a control operation so as to perform a call connection over a relevant communication network of a SIM card among the at least two SIM cards, which has the larger electric field value of the relevant communication network.