Abstract: A transistor array substrate includes a substrate, an active layer disposed on the substrate and including a channel region, a source region and a drain region, a gate insulating layer disposed on a part of the active layer, a gate electrode overlapping the channel region of the active layer and included in an electrode conductive layer which is disposed on the gate insulating layer, a source electrode included in the electrode conductive layer and in contact with a part of the source region of the active layer, and a drain electrode included in the electrode conductive layer and in contact with a part of the drain region of the active layer. The active layer includes an oxide semiconductor including crystals and is disposed as an island shape excluding a hole in a plan view.

Abstract: A display device includes a data conductive layer including a first power line, a passivation layer with a first opening exposing the first power line, a via layer with a second opening partially overlapping the first opening, a pixel electrode on the via layer, a connection electrode in the first and second openings, a pixel-defining film with an opening overlapping the second opening, a light-emitting layer on the pixel-defining film, the pixel electrode and the connection electrode, and a common electrode connected to the first power line. The data conductive layer includes a data base layer, a data main metal layer, and a data capping layer, the first power line includes a wire connection structure, in which the data main metal layer is recessed from sides of the data capping layer, and the common electrode is connected to the data main metal layer in the wire connection structure.

Abstract: A display device includes a pixel. The pixel is electrically connected to a first power line, a second power line, and a data line. The pixel includes a first transistor, and a capacitor electrically connected between a gate electrode of the first transistor and an electrode of the first transistor. In a plan view, the data line extends in a second direction. The first power line extends in a first direction intersecting the second direction and overlaps the data line and the gate electrode of the first transistor. The second power line extends in the second direction, overlaps the data line, and overlaps the gate electrode of the first transistor.

Abstract: A display device includes a substrate, an emission layer disposed on the substrate, and a plurality of signal lines disposed on the substrate, electrically connected to the emission layer, and including a first signal line. The first signal line includes a first layer including a refractory metal, a second layer disposed on the first layer and including a low-resistance metal, a third layer disposed on the second layer and including a first metal oxide, and a fourth layer disposed on the third layer and including a second metal oxide, and the first metal oxide of the third layer includes the low-resistance metal of the second layer.

Abstract: A display device includes a substrate which includes a display area and a non-display area, a transistor disposed in the display area, a pad disposed in the non-display area, and an insulating layer which is disposed on the transistor and defines an opening which overlaps the pad in a plan view. The pad includes a main layer, a first auxiliary layer on the main layer, and a second auxiliary layer on the first auxiliary layer, and the second auxiliary layer defines the opening.

Abstract: A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line.

Abstract: The present invention relates to a method for manufacturing an oxide semiconductor thin film transistor and to an actively operating display device and actively operating sensor display device using the same. A method for manufacturing an oxide semiconductor thin film transistor includes: forming a gate electrode by depositing and patterning a gate layer over a substrate; sequentially depositing a gate insulation film, an oxide semiconductor, and an etch stopper over the gate electrode and patterning the etch stopper; patterning the oxide semiconductor; forming a source electrode and a drain electrode over the patterned oxide semiconductor; and depositing a protective layer over the source electrode and the drain electrode and forming a contact hole in the protective layer, where the oxide semiconductor is formed to a thickness that is smaller than or equal to 4 nm.

Abstract: The present invention is related to a manufacturing method of high purity and refined Ru (Ruthenium) powder produced by using a waste Ru target. Yield of the target and physical properties of a thin film are improved by producing tremendously refined in which oxygen content of the target is decreased, and a crystal particle size is reduced. In order to obtain these merits, powder having a hollow inside is produced by applying plasma to a waste Ru target. Carbon impurities are selectively removed through a atmospheric heat process and Ru powder is oxidized. Thereby, Ru oxide (RuOx) powder is produced. High purity and refined Ru powder is acquired through a hydrogen atmospheric heat process after pulverizing the produced Ru oxide (RuOx) powder into refined shape.

Abstract: Zr—Ti—Ni(Cu)-based filler alloy composition having low melting point for brazing titanium and titanium alloys is expressed as: ZraTibNic (Formula 1) where a, b and c denote atomic % of Zr, Ti and Ni, respectively; 47?a?52; 24?b?30; 22?c?26; and 0.3<c/(a+c)<0.35, or ZraTibNicCud (Formula 2) where a, b, c and d denote atomic % of Zr, Ti, Ni and Cu respectively; 48?a?60; 20?b?28; 19?c+d?30; 3?d?12; and 0.12<d/(c+d)?0.5. Including Zr(Ti) solid solution phase as major constituent phase, the alloy compositions have lower liquidus temperature than those of conventional alloys and they include a little amount of Cu or does not include it at all. When the alloy is used as filler alloy for brazing titanium and titanium alloys, brazing can be performed at remarkably low temperature. This can inhibit the microstructure of titanium base metal from changing and being damaged, keeping the titanium base metal preserving inherent properties after brazing.

Abstract: Disclosed is Zr—Ti—Ni(Cu)-based filler alloy composition having low melting point for brazing titanium and titanium alloys. The Zr—Ti—Ni(Cu)-based alloy composition is expressed as: ZraTibNic (Formula 1) where a, b and c denote atomic % of Zr, Ti and Ni, respectively; 47?a?52; 24?b?30; 22?c?26; and 0.3<c/(a+c)<0.35, or ZraTibNicCud (Formula 2) where a, b, c and d denote atomic % of Zr, Ti, Ni and Cu respectively; 48?a?60; 20?b?28; 19?c+d?30; 3?d?12; and 0.12<d/(c+d)?0.5. Including Zr(Ti) solid solution phase as its major constituent phase, the alloy compositions of this invention have lower liquidus temperature than those of conventional alloys and they include a little amount of Cu or does not include it at all. When alloy of the present invention is used as filler alloy for brazing titanium and titanium alloys, brazing can be performed at remarkably low temperature.

Abstract: Zr—Ti—Ni(Cu)-based filler alloy composition having low melting point for brazing titanium and titanium alloys is expressed as: ZraTibNic (Formula 1) where a,b and c denote atomic % of Zr, Ti and Ni, respectively; 47?a?52; 24?b?30; 22?c?26; and 0.3<c/(a+c)<0.35, or ZraTibNicCud (Formula 2) where a,b,c and d denote atomic % of Zr, Ti, Ni and Cu respectively; 48?a?60; 20?b?28; 19?c+d?30; 3?d?12; and 0.12<d/(c+d)?0.5. Including Zr(Ti) solid solution phase as major constituent phase, the alloy compositions have lower liquidus temperature than those of conventional alloys and they include a little amount of Cu or does not include it at all. When the alloy is used as filler alloy for brazing titanium and titanium alloys, brazing can be performed at remarkably low temperature. This can inhibit the microstructure of titanium base metal from changing and being damaged, keeping the titanium base metal preserving inherent properties after brazing.

Abstract: A method and apparatus for pairing between Bluetooth devices, If a pairing between Bluetooth devices is requested, a six-digit passkey is generated in an authentication process based on secure simple pairing (SSP). If a Bluetooth device (BD) address of a correspondent device is pre-registered and there are characters designated to the BD address, the designated characters instead of the passkey are outputted.

Abstract: A mobile terminal and method for transferring call charges between mobile terminals are disclosed. To transfer call-related charges between mobile terminals, the mobile terminal and call charge transfer method place a call by a calling mobile terminal to a called mobile terminal to establish a call connection for conversation, transmit a call transfer request by the calling mobile terminal to impose call-related charges on the called mobile terminal, and perform, if the called mobile terminal accepts the call transfer request, a call transfer operation to impose the call-related charges on the called mobile terminal, and maintain, if the called mobile terminal rejects the call transfer request, the call to impose the call-related charges on the calling mobile terminal. As a result, during a call between mobile terminals, the called user can accept a call transfer request of the calling user to transfer call-related charges to the called party, thereby enabling flexible and efficient billing.

Abstract: A misinput avoidance method of a mobile terminal may be implemented to prevent a misinput caused by contacting unintended keys around the target key. A misinput avoidance method of a mobile terminal according to the present invention includes detecting inputs of a plurality of keys and discriminating a target key from other keys. The method also includes extracting keys around the target key and registering the keys around the target keys as neighbor keys. The method further includes processing the input of the target key while blocking the inputs of the neighbor keys. The method further includes releasing, when the target key is released, the blocking of the inputs of the neighbor keys.

Abstract: Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 ? or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.

Abstract: A mobile device allows a letter input based on a cut or copy and paste technique. In a method for inputting a letter, the mobile device displays letters inputted by a user in a letter input window. The mobile device receives the selection of at least one of the displayed letters and the selection of a position in the letter input window. Then the mobile device moves and displays the selected at least one letter to the selected position. This letter input method is available for any types of the mobile devices regardless of being based on a touch screen or not.

Abstract: Disclosed is Zr—Ti—Ni (Cu)-based filler alloy composition having low melting point for brazing titanium and titanium alloys. The Zr—Ti—Ni (Cu)-based alloy composition is expressed as: ZraTibNic (Formula 1) where a,b and c denote atomic % of Zr, Ti and Ni, respectively; 47<a<52; 24?b?30; 22<c<26; and 0.3<c/(a+c)<0.35, or ZraTibNicCud (Formula 2) where a,b,c and d denote atomic % of Zr, Ti, Ni and Cu respectively; 48?a?60; 20<b<28; 19<c+d<30; 3<d<12; and 0.12<d/(c+d)?0.5. Including Zr(Ti) solid solution phase as its major constituent phase, the alloy compositions of this invention have lower liquidus temperature than those of conventional alloys and they include a little amount of Cu or does not include it at all. When alloy of the present invention is used as filler alloy for brazing titanium and titanium alloys, brazing can be performed at remarkably low temperature.

Abstract: The present invention provides a method for receiving an incoming call at a first mobile communication terminal including registering an identity of at least one second mobile communication terminal capable of performing local wireless communication with a first mobile communication terminal; checking, after receiving the incoming call at the first mobile communication terminal, whether a user's input is received by the first mobile communication terminal to accept the incoming call during a first time duration; and transmitting, if the user input is not received by the first mobile communication terminal, absence information to the second mobile communication terminal notifying the second mobile communication terminal of reception of the incoming call at the first mobile communication terminal using local wireless communication.

Abstract: A method of processing an input signal of a portable device is provided, including collecting an input signal generated from at least one of an input unit and a touch screen; generating a preset repetitive input signal when the collected input signal corresponds to a preset condition input signal; and using an application that is currently activated based on the repetitive input signal.

Abstract: A method is provided for registering and displaying digital multimedia broadcasting (DMB) channels in a mobile terminal capable of receiving DMB. A selection of DMB mode is detected and electronic program guide (EPG) information is received. The received EPG information is analyzed and the analyzed received EPG information is divided into fixed program channel information and dynamic program channel information. The fixed program channel information is matched with a genre in which a fixed program channel has been registered, and a result of the matching is displayed. The dynamic program channel information is matched with a genre in which a dynamic program channel has been registered and a genre of a program currently being broadcast on the dynamic program channel, and a result of the matching is displayed.