Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In one example, an electronic device includes a lower substrate comprising a lower substrate upper side and a lower substrate lower side, and an upper substrate comprising an upper substrate upper side and an upper substrate lower side. The electronic device also includes a first electronic component and a second electronic component coupled to the upper substrate upper side. A first device interconnect and a second device interconnect couple the lower substrate upper side to the upper substrate lower side. The electronic device also includes a connect die coupled to the lower substrate upper side that electrically couples the first electronic component to the second electronic component. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

Abstract: The present invention provides a method for manufacturing a high-nickel positive electrode active material comprising the steps of preparing a raw material containing nickel and cobalt; separating a liquid intermediate by leaching a metal component in the pulverized raw material using an acid and removing impurities; and co-precipitating a precursor of a positive electrode active material by adding a chelating agent and a hydroxide precipitant to the liquid intermediate.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: Various examples of the present invention relate to an apparatus and a method for controlling a connection and an operation of an antenna in an electronic device.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

Abstract: A method performed using at least one processor to facilitate word learning, the method including selecting a plurality of words to be learned; generating a learning word pool including the plurality of words to be learned; selecting a determined number of words from the learning word pool; generating a learning list including the determined number of words; displaying a first word included in the learning list; receiving a selection of whether to maintain the displayed first word in the learning list or replace the displayed first word with an alternate word; excluding the displayed first word from the learning list in response to the selection to replace the displayed first word; and adding the alternate word to the learning list in response to the excluding.

Abstract: Various examples of the present invention relate to an apparatus and a method for controlling a connection and an operation of an antenna in an electronic device.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: The present invention comprises: a first X-ray irradiation apparatus and a second X-ray irradiation apparatus for irradiating a subject with X-rays; an X-ray generation unit supporting so that first and second X-rays irradiated onto the subject are detected by a set detector when the subject is irradiated with the first and second X-rays from the first and second X-ray irradiation apparatuses, respectively; and a mode selection unit for allowing selection of any one mode from among a 2D imaging mode and 3D imaging mode, wherein the angles with respect to the subject of the first and second X-ray irradiation apparatuses are determined on the basis of said any one mode selected by means of the mode selection unit from among the 2D imaging mode and 3D imaging mode. According to the present invention, the mode can be easily selected according to need from among the 2D imaging mode and 3D imaging mode.

Abstract: In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

Abstract: The present invention comprises: a first X-ray irradiation apparatus and a second X-ray irradiation apparatus for irradiating a subject with X-rays; an X-ray generation unit supporting so that first and second X-rays irradiated onto the subject are detected by a set detector when the subject is irradiated with the first and second X-rays from the first and second X-ray irradiation apparatuses, respectively; and a mode selection unit for allowing selection of any one mode from among a 2D imaging mode and 3D imaging mode, wherein the angles with respect to the subject of the first and second X-ray irradiation apparatuses are determined on the basis of said any one mode selected by means of the mode selection unit from among the 2D imaging mode and 3D imaging mode. According to the present invention, the mode can be easily selected according to need from among the 2D imaging mode and 3D imaging mode.

Abstract: The present invention relates to a synthesis method of preventing the formation of impurities and byproducts in the synthesis of tenofovir disoproxil fumarate (Teno-DF) used as a medicine for hepatitis B and HIV treatment due to its function to promote bioactivities. In the synthesis method of the present invention, an ion-exchange resin (Dowex 50W hydrogen form, sulfonic acidic cation exchange resin) is used to enhance the yield and purity of the compound. The present invention also relates to a method of preparing an oral dissolving film dosage form in the manufacture of a medicine using the tenofovir compound with high purity obtained by the synthesis method of the present invention as an effective ingredient.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.