Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: A substrate inspection apparatus inspecting substrates using a vision system, which includes a camera module and an illumination module, and a substrate treatment system including the substrate inspection apparatus are provided. The substrate treatment system includes: a first substrate treatment apparatus; a second substrate treatment apparatus; a transfer unit transporting a container with a plurality of substrates accommodated therein from the first substrate treatment apparatus to the second substrate treatment apparatus; and a substrate inspection apparatus inspecting the substrates, wherein the substrate inspection apparatus includes an illumination module, which illuminates in a direction where the substrates are located, a camera module, which acquires images related to the substrates when the substrates are illuminated, and a control module, which inspects the substrates based on the images.

Abstract: In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.

Abstract: Provided is an organic light emitting device comprising a light emitting layer comprising an organic alloy of a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency, and lifespan: where A is a benzene ring fused with the two adjacent rings, X1, X2 and X3 are each independently CH or N, provided that at least one of X1, X2 and X3 is N, Ar1-Ar5 are each independently a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S, and the other substituents are defined in the specification, provided that at least one of Ar4 and Ar5 is substituted with at least one deuterium, or at least one R2 is deuterium.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2, is provided.

Abstract: An organic light emitting device having improved efficiency, driving voltage, and lifespan is provided. The organic light emitting device comprises an anode, a cathode, and a light emitting between the anode and the cathode, and the light emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2.

Abstract: Disclosed is an exoskeleton-type rehabilitation robot system, including: a body part provided on a chair in which a user sits and provided with a robot arm capable of moving left or right based on the user seated on the chair; a conversion part configured to convert a position of the robot arm with respect to the body part; a driving part configured to articulate the robot arm with respect to the body part; and a controller configured to detect a change in a position of the robot arm and control a left or right driving mode of the driving part according to the position of the robot arm. In accordance with such a configuration, the exoskeleton-type rehabilitation robot system of the present invention is provided integrally with a chair, thereby having excellent space utilization. In addition, the user's initial preparation for rehabilitation training is simple, which can improve efficiency.

Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.

Abstract: Provided is a heterocyclic compound of Chemical Formula 1: wherein: Y1 is O or S; Ar1 is a substituted C6-60 aryl; or a substituted or unsubstituted C1-60 heteroaryl containing one or more heteroatoms selected from among O, N, Si, and S; L is a single bond; a substituted or unsubstituted C6-60 arylene; or a substituted or unsubstituted C1-60 heteroarylene containing one or more heteroatoms selected from among O, N, Si, and S; R1 to R3 are each independently hydrogen; deuterium; a halogen; cyano; nitro; amino; a substituted or unsubstituted C1-60 alkyl; a substituted or unsubstituted C1-60 haloalkyl; or a substituted or unsubstituted: C1-60 alkoxy, C1-60 haloalkoxy, C3-60 cycloalkyl, C2-60 alkenyl, C6-60 aryl, C6-60 aryloxy, or C1-60 heteroaryl containing one or more heteroatoms selected from among N, O, and S, and n1 to n3 are each independently 1 to 5, and an organic light emitting device including the same.

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

Abstract: The present invention provides a method for manufacturing a high-nickel positive electrode active material comprising the steps of preparing a raw material containing nickel and cobalt; separating a liquid intermediate by leaching a metal component in the pulverized raw material using an acid and removing impurities; and co-precipitating a precursor of a positive electrode active material by adding a chelating agent and a hydroxide precipitant to the liquid intermediate.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: Various examples of the present invention relate to an apparatus and a method for controlling a connection and an operation of an antenna in an electronic device.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

Abstract: A method performed using at least one processor to facilitate word learning, the method including selecting a plurality of words to be learned; generating a learning word pool including the plurality of words to be learned; selecting a determined number of words from the learning word pool; generating a learning list including the determined number of words; displaying a first word included in the learning list; receiving a selection of whether to maintain the displayed first word in the learning list or replace the displayed first word with an alternate word; excluding the displayed first word from the learning list in response to the selection to replace the displayed first word; and adding the alternate word to the learning list in response to the excluding.

Abstract: Various examples of the present invention relate to an apparatus and a method for controlling a connection and an operation of an antenna in an electronic device.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.