Patents by Inventor Dong Hsu
Dong Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110271239Abstract: The present disclosure provides for many different embodiments. A mask fabrication method and system is provided. The method and system identify critical areas of an integrated circuit (IC) design layout that has undergone optical proximity correction. The critical areas are areas of the OPCed IC design layout that are at risk for hot spots. A lithography process check is then performed on the critical areas of the OPCed IC design layout.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chi-Ta Lu, Peng-Ren Chen, Dong-Hsu Cheng, Chang-Jyh Hsieh
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Publication number: 20110091797Abstract: Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process.Type: ApplicationFiled: October 21, 2009Publication date: April 21, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao Chih Chang, Dong-Hsu Cheng, Chih-Chiang Tu
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Publication number: 20100081065Abstract: A method of fabricating a photomask is provided. A masking layer (e.g., chrome) is deposited on a substrate. A plasma treatment may be performed on the chrome layer. A photoresist layer may be formed on the treated chrome layer. In an embodiment, the plasma treatment roughens the chrome layer. In an embodiment, the plasma treatment forms a barrier film on the chrome layer. The photoresist layer may be used to pattern a sub-resolution assist feature.Type: ApplicationFiled: October 1, 2008Publication date: April 1, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Dong-Hsu Cheng, Chein-Hao Huang, Cheng-Ming Lin
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Patent number: 7514184Abstract: A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl?. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.Type: GrantFiled: March 28, 2005Date of Patent: April 7, 2009Assignee: Taiwan Semiconductor Manufacturing Co.Inventors: Wei-Yu Su, Dong-Hsu Cheng, Li-Kong Turn
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Patent number: 7029800Abstract: A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl?. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.Type: GrantFiled: October 18, 2002Date of Patent: April 18, 2006Assignee: Taiwan Semiconductor Manufacturing Co LtdInventors: Wei-Yu Su, Dong-Hsu Cheng, Li-Kong Turn
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Patent number: 6948619Abstract: A pod for transporting reticles is made with a reticle support that has a ?-shape and is provided with pins, whose arrangement matches the location of chrome-free areas on a reticle base. Due to that, the pins, when supporting the reticle, come into contact with the reticle in chrome-free areas thereof. Thus, scratching the metallic areas and releasing metallic particles is prevented from occurring.Type: GrantFiled: July 5, 2002Date of Patent: September 27, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LTDInventors: Wei-Yu Su, Li-Kong Tern, Dong-Hsu Cheng
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Publication number: 20050186488Abstract: A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl?. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.Type: ApplicationFiled: March 28, 2005Publication date: August 25, 2005Inventors: Wei-Yu Su, Dong-Hsu Cheng, Li-Kong Turn
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Publication number: 20040076834Abstract: A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl−. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.Type: ApplicationFiled: October 18, 2002Publication date: April 22, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Yu Su, Dong-Hsu Cheng, Li-Kong Turn
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Publication number: 20040005209Abstract: A pod for transporting reticles is made with a reticle support that has a &pgr;-shape and is provided with pins, whose arrangement matches the location of chrome-free areas on a reticle base. Due to that, the pins, when supporting the reticle, come into contact with the reticle in chrome-free areas thereof. Thus, scratching the metallic areas and releasing metallic particles is prevented from occurring.Type: ApplicationFiled: July 5, 2002Publication date: January 8, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Yu Su, Li-Kong Tern, Dong-Hsu Cheng
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Patent number: 6365303Abstract: A mask pattern having an anti-ESD ring which protects the pattern region of the mask from damage due to ESD events. The anti-ESD ring has a space between two broad border regions formed of an opaque metal such as chrome. ESD fingers, or rods extend from one of the border regions to within a small gap of the other border region. These ESD fingers act as lightning rods so that ESD events preferably occur across this small gap between the ESD fingers and one of the border regions. The ESD fingers are small enough so that any metal transferred across the gap in an ESD event is very small. The gap is located so that any metal transferred is far away from the pattern region of the mask. The ESD fingers confine ESD events to a preferred region of the mask and damage to the pattern region is avoided.Type: GrantFiled: April 24, 2000Date of Patent: April 2, 2002Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chang-Cheng Hung, Jeen-Hao Liu, Yi-Hsu Chen, Yung-Haw Liaw, Dong-Hsu Cheng, Deng-Guey Juang
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Patent number: 6247599Abstract: An electrostatic discharge-free container equipped with a metal shield for holding an insulating article therein is described. In the container, an electrically conductive layer substantially covers a bottom lid made of a non-conductive material so as to sufficiently shield the insulating article from electrostatic discharge damages. The present invention novel ESD-free container may further be provided with a metal knob situated in a top lid of the container, or be provided with a metal enclosure positioned inside the container between the top lid and the insulating article. The metal layer that substantially overlaps the bottom lid may be injection molded as an insert in the bottom lid, or may be coated or plated on the bottom lid. The present invention novel ESD-free container eliminates any electrostatic discharge from occurring on a reticle plate and thus avoiding any potential damages.Type: GrantFiled: January 14, 2000Date of Patent: June 19, 2001Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventors: Dong-Hsu Cheng, Yung Haw Liaw, Deng-Guey Juang
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Patent number: 5962193Abstract: The present invention discloses a method and apparatus for controlling air flow in a liquid coating apparatus by providing an adjustable housing that consists of an upper compartment and a lower compartment such that the height of the cavity contained therein can be adjusted. Subsequently, the spacing between a substrate to be coated and the interior wall of the upper compartment can be suitably adjusted to allow a desirable quantity of air flowing therethrough. The redeposition of liquid coating particles thrown off the substrate surface during a spin coating process and then bouncing back from the interior wall of the upper compartment onto the substrate surface can be prevented. The contamination of the substrate surface can therefore be eliminated or reduced.Type: GrantFiled: January 13, 1998Date of Patent: October 5, 1999Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Kuang-Hung Lin, Dong-Hsu Cheng, Cheng-Wei Huang, Cheng-Ku Chen
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Patent number: 5871889Abstract: A method of photomask reticle design provides for greatly increased tolerance to adjacent exposure field alignment and/or stepper magnification errors, thus eliminating gaps between adjacent exposure fields in the fabrication of semiconductor integrated circuit devices.The resulting insurance of complete exposure of photoresist eliminates the formation of non-exposed unwanted photoresist residues or stringers, which constitute defects in the manufacture of such devices.Type: GrantFiled: June 14, 1996Date of Patent: February 16, 1999Assignee: Taiwan Semiconductor Manufacting Company, Ltd.Inventors: Jian-Huei Lee, Dong-Hsu Cheng
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Patent number: 5807660Abstract: A new method to improve the adhesion of a photoresist layer to an underlying dielectric layer in the fabrication of integrated circuit devices is described. Semiconductor device structures are provided in and on a semiconductor substrate. A dielectric layer is deposited over the semiconductor device structures wherein the depositing is performed in a deposition chamber. The dielectric layer is treated with a N.sub.2 O plasma treatment while the substrate is still within the deposition chamber. The substrate is removed from the deposition chamber. A photoresist mask is formed over the dielectric layer with an opening above the semiconductor device structures to be electrically contacted wherein the plasma treatment improves adhesion of the photoresist mask to the dielectric layer when compared to a conventional integrated circuit device. A contact opening is etched through the dielectric layer not covered by the mask to the semiconductor device structures to be electrically contacted.Type: GrantFiled: February 3, 1997Date of Patent: September 15, 1998Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Kuang-Hung Lin, Dong-Hsu Cheng
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Patent number: 5794196Abstract: In the speech recognition system disclosed herein, an input utterance is submitted to both a large vocabulary isolated word speech recognition module and a small vocabulary continuous speech recognition module. The small vocabulary contains command words which can be combined in sequences to define commands to an application program. The two recognition modules generate respective scores for identified large vocabulary models and for sequences of small vocabulary models. The score provided by the continuous speech recognizer is normalized on the basis of the length of the speech input utterance and an arbitration algorithm selects among the candidates identified by the recognition modules. Without requiring the user to switch modes, text is output if a score from the isolated word recognizer is selected and a command is output if a score from the continuous speech recognizer is selected.Type: GrantFiled: June 24, 1996Date of Patent: August 11, 1998Assignee: Kurzweil Applied Intelligence, Inc.Inventors: Girija Yegnanarayanan, John Armstrong, III, Dong Hsu
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Patent number: 5677991Abstract: In the speech recognition system disclosed herein, an input utterance is submitted to both a large vocabulary isolated word speech recognition module and a small vocabulary continuous speech recognition module. The two recognition modules generate respective scores for identified large vocabulary models and for sequences of small vocabulary models. The score provided by the continuous speech recognizer is normalized on the basis of the length of the speech input utterance and an arbitration algorithm selects among the candidates identified by the recognition modules. Preferably, the competing scores from the two recognizers are scaled by a factor or factors empirically trained to minimize incursion by each of the vocabularies on correct results from the other vocabulary.Type: GrantFiled: June 30, 1995Date of Patent: October 14, 1997Assignee: Kurzweil Applied Intelligence, Inc.Inventors: Dong Hsu, Harley M. Rosnow, Vladimir Sejnoha, Brian H. Wilson