Abstract: The present invention relates to the novel lactic acid bacteria Lactobacillus mucosae and Bifidobacterium longum, and specifically, to a composition comprising the novel lactic acid bacteria, the composition enabling the inhibition of the expression of the p16 protein, which is an aging factor, and the inhibition of inflammatory factors, thereby being useful in preventing and treating memory impairment, learning disabilities or mental disorders, and in preventing and treating inflammatory diseases.

Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure or by comprising a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: There is provided an additive, containing magnesium silicate, for a secondary battery electrolyte and a preparation method therefor. The magnesium silicate has a mass ratio of 50 to 70 wt % of oxygen (O), 5 to 20 wt % of magnesium (Al), and 15 to 35 wt % of silicon (Si). The magnesium silicate has a surface area of 50 to 500 m2/g. The magnesium silicate has a pore size of 0.1 to 20 nm.

Abstract: There is provided an additive for secondary battery electrolyte, containing aluminum silicate. The aluminum silicate has a particle size of 200 nm to 20 ?m. The aluminum silicate has a mass ratio of 60 to 70 wt % of oxygen (O), 0.1 to 2.0 wt % of aluminum (Al), and 25 to 35 wt % of silicon (Si). The aluminum silicate has a surface area of 50 to 1,000 m2/g. The aluminum silicate has a pore size of 0.1 to 20 nm.

Abstract: A method for preparing a zinc ferrite-based catalyst according to an embodiment of the present application comprises the steps of: contacting a metal precursor solution including a zinc precursor, a ferrite precursor, an acid solution and water with a basic aqueous solution to obtain a precipitate; and filtering and thereafter drying and calcining the precipitate, wherein the acid solution includes one or more of nitric acid (HNO3) and hydrocarbon acid.

Abstract: Disclosed is an exoskeleton-type rehabilitation robot system, including: a body part provided on a chair in which a user sits and provided with a robot arm capable of moving left or right based on the user seated on the chair; a conversion part configured to convert a position of the robot arm with respect to the body part; a driving part configured to articulate the robot arm with respect to the body part; and a controller configured to detect a change in a position of the robot arm and control a left or right driving mode of the driving part according to the position of the robot arm. In accordance with such a configuration, the exoskeleton-type rehabilitation robot system of the present invention is provided integrally with a chair, thereby having excellent space utilization. In addition, the user's initial preparation for rehabilitation training is simple, which can improve efficiency.

Abstract: A method for manufacturing a catalyst for oxidative dehydrogenation reaction, a catalyst for oxidative dehydrogenation reaction, and a method for manufacturing butadiene using the same.

Abstract: Provided are an anti-VEGF hexameric antibody, and a composition including the hexameric antibody.

Abstract: The present embodiments provide a stacked memory apparatus and a repairing method thereof which store information about a spare resource in a pre-bond process, check a spare resource available in a post-bond process, correct an error through an error correction code, and variably use the same number of spare resources to additionally ensure a number of spare resources in the post-bond process, thereby improving a yield.

Abstract: An augmented reality (AR) service clustering a plurality of markers for mapping an AR object by a device into at least one group and determining a representative marker of the clustered group, and preferentially searching for markers included in a cluster of the representative marker when a scene recognized by the device corresponds to the representative marker, is provided. An AR service generating an AR object based on data received from a user while a scene recognized by a device is displayed on a screen of the device and determining the recognized scene as a marker of the AR object is also provided. An AR service clustering a previously obtained plurality of pieces of content based on a predetermined reference and generating an AR object based on the plurality of clustered pieces of content is further provided.

Abstract: The present embodiments provide a stacked memory apparatus and a repairing method thereof which store information about a spare resource in a pre-bond process, check a spare resource available in a post-bond process, correct an error through an error correction code, and variably use the same number of spare resources to additionally ensure a number of spare resources in the post-bond process, thereby improving a yield.

Abstract: Disclosed are a stacked memory device and a method of repairing the same, in which spare cells for a post-bond test and repair process are disposed in a base die and the spare cells are used in each memory layer as many as the number desired, a repair result after the test is permanently stored, and the spare cell of the base die and the memory layer are simultaneously approached and meaningful data is selected, so that it is not necessary to newly perform a test even though power of a memory is blocked, it is possible to solve time wasted during an approach to a memory layer after a spare memory performs determination, and it is possible to secure a high repair rate.

Abstract: Disclosed are a stacked memory device and a method of repairing the same, in which spare cells for a post-bond test and repair process are disposed in a base die and the spare cells are used in each memory layer as many as the number desired, a repair result after the test is permanently stored, and the spare cell of the base die and the memory layer are simultaneously approached and meaningful data is selected, so that it is not necessary to newly perform a test even though power of a memory is blocked, it is possible to solve time wasted during an approach to a memory layer after a spare memory performs determination, and it is possible to secure a high repair rate.

Abstract: An augmented reality (AR) service clustering a plurality of markers for mapping an AR object by a device into at least one group and determining a representative marker of the clustered group, and preferentially searching for markers included in a cluster of the representative marker when a scene recognized by the device corresponds to the representative marker, is provided. An AR service generating an AR object based on data received from a user while a scene recognized by a device is displayed on a screen of the device and determining the recognized scene as a marker of the AR object is also provided. An AR service clustering a previously obtained plurality of pieces of content based on a predetermined reference and generating an AR object based on the plurality of clustered pieces of content is further provided.

Abstract: A method of fabricating a semiconductor device includes providing a substrate having first areas and second areas, forming first metal wires on the first areas of the substrate, forming second metal wires on the second areas of the substrate, forming an interlayer insulation layer to cover the first and second metal wires, forming pad patterns on the first metal wires, forming a passivation layer to cover the pad patterns on the interlayer insulation layer, and forming a wrapping layer on the passivation layer. The wrapping layer includes first openings that are vertically aligned with the pad patterns, and second openings that are disposed on the second areas and that horizontally connect the first openings with each other.

Abstract: The semiconductor device includes a process monitoring pattern and an input/output (I/O) pad array area, the process monitoring pattern including a lower layer having a peripheral area surrounding a first internal area, the first internal area exposed by an internal open area, an external structure on the peripheral area of the lower layer, and a first dam disposed in the peripheral area spaced apart from the external structure by an external open area, the first dam defining the first internal area. The peripheral area overlaps the input/output (I/O) pad array area of the semiconductor device.

Abstract: The semiconductor device includes a process monitoring pattern and an input/output (I/O) pad array area, the process monitoring pattern including a lower layer having a peripheral area surrounding a first internal area, the first internal area exposed by an internal open area, an external structure on the peripheral area of the lower layer, and a first dam disposed in the peripheral area spaced apart from the external structure by an external open area, the first dam defining the first internal area. The peripheral area overlaps the input/output (I/O) pad array area of the semiconductor device.

Abstract: The semiconductor device includes a process monitoring pattern and an input/output (I/O) pad array area, the process monitoring pattern including a lower layer having a peripheral area surrounding a first internal area, the first internal area exposed by an internal open area, an external structure on the peripheral area of the lower layer, and a first dam disposed in the peripheral area spaced apart from the external structure by an external open area, the first dam defining the first internal area. The peripheral area overlaps the input/output (I/O) pad array area of the semiconductor device.

Abstract: A semiconductor wafer includes semiconductor chip areas on a semiconductor substrate, the semiconductor chip areas having thereon semiconductor circuit patterns and inner guard ring patterns surrounding the semiconductor circuit patterns; and scribe lanes on the semiconductor substrate between the semiconductor chip areas, the scribe lanes having thereon outer guard ring patterns surrounding the inner guard ring patterns and a process monitoring pattern between the outer guard ring patterns, the outer guard ring patterns and the process monitoring pattern being merged with each other.

Abstract: A semiconductor device including a plurality of decoupling capacitors formed on a semiconductor substrate, and a plurality of decoupling capacitor contact plugs disposed between the semiconductor substrate and the plurality of decoupling capacitors, the plurality of decoupling capacitor contact plugs being electrically connected to the plurality of decoupling capacitors and including an array of first decoupling capacitor contact plugs and second decoupling capacitor contact plugs.