Abstract: Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate; formation of sequentially a gate insulating layer, an active layer, a data metal layer, and a photoresist etching mask pattern on the gate line; etching the data metal layer with the same shape as the photoresist etching mask pattern; etching the active layer by using the photoresist etching mask pattern; formation of a data line including a source electrode and a drain electrode for completing a channel region on the active layer; and formation of a pixel electrode exposing the drain electrode and electrically connected with the drain electrode, in which in the etching of the active layer, a dry-etch process is performed by using gas including at least one of NF3 and H2.

Abstract: A method for reconnecting a relay in a vehicle battery management system includes: measuring an insulation resistance between a positive electrode or a negative electrode of a battery and a vehicle chassis; turning off each of relays connected between the positive and negative electrodes of the battery and a load when the measured insulation resistance is less than a reference value; re-measuring the insulation resistance; and performing a relay-on sequence for turning on each of the relays when the resistance value of the re-measured insulation resistance is greater than the reference value. A relay reconnection number of the relay-on sequence, based on a repetition of the measuring and re-measuring, is set and limited so as to not exceed a threshold value.

Abstract: A method for reconnecting a relay in a vehicle battery management system includes: measuring an insulation resistance between a positive electrode or a negative electrode of a battery and a vehicle chassis; turning off each of relays connected between the positive and negative electrodes of the battery and a load when the measured insulation resistance is less than a reference value; re-measuring the insulation resistance; and performing a relay-on sequence for turning on each of the relays when the resistance value of the re-measured insulation resistance is greater than the reference value. A relay reconnection number of the relay-on sequence, based on a repetition of the measuring and re-measuring, is set and limited so as to not exceed a threshold value.

Abstract: The present invention relates to a lighting apparatus which stably performs dimming control on a lamp implemented with light emitting diodes (LEDs) or the like. The lighting apparatus may improve power efficiency by driving power supplied to a lamp in a current regulation method, perform constant current control such that the lamp maintains constant brightness, perform dimming control for controlling the brightness of the lamp, commonly supply the power provided to the lamp to peripheral circuit modules, and perform constant voltage control such that a driving voltage supplied as power is maintained at a predetermined level or more.

Abstract: A thin film transistor substrate includes a gate electrode arranged on a substrate, a gate insulation layer arranged on the gate electrode, an active pattern arranged on the gate insulation layer, a source electrode overlapping a first end portion of the active pattern, and a drain electrode overlapping a second and opposite end portion of the active pattern. A fluorocarbon-like material is arranged on one or more of surfaces of at least one of the active pattern, the source electrode and the drain electrode, and on a photoresist pattern used in the formation process of the thin film substrate. The fluorocarbon-like material on the photoresist pattern serves to maintain a shape and size of the photoresist pattern during subsequent patterning processes.

Abstract: A management equipment transfer apparatus which transfers management equipment, which tests and maintains an inside of a nuclear reactor vessel, inside the nuclear reactor vessel while being locked to the management equipment and the nuclear reactor vessel, includes: a cross beam configured to be lengthily disposed inside the nuclear reactor vessel in a transverse direction; a rod configured to be connected to a cross beam lengthily disposed inside the nuclear reactor vessel in a longitudinal direction; a bracket configured to be mounted in the rod to fix the management equipment; an arm configured to extend toward an inner peripheral surface of the nuclear reactor vessel and be connected to the cross beam; and rolling parts configured to be disposed at ends of the arm and the cross beam, contact the inner peripheral surface of the nuclear reactor vessel, and rotatably support the cross beam and the arm.

Abstract: A thin film transistor array panel includes a substrate; a gate line located over the substrate and including a gate pad portion; a data line located over the gate line and including a source electrode and a data pad portion; a drain electrode; a first passivation layer located over the data line and the drain electrode; an organic insulating layer located over the first passivation layer and having a contact hole; a first field generating electrode located over the organic insulating layer and having an opening; a second passivation layer located over the first field generating electrode; and a second field generating electrode located over the second passivation layer. The contact hole coincides with or is smaller than the opening, and the contact hole has a tapered structure.

Abstract: Disclosed is a continuously variable valve lift actuator of an engine. The continuously variable valve lift actuator of an engine changes rotating angles of a rocker arm and a lift arm having a four-bar link structure to control an intake amount of air of an intake valve based on a running state of a vehicle, and adjusts a location and a length of a link bar by taking into consideration a rotating direction of a cam shaft and interference according to layout of the engine to advance an open time of a valve. The continuously variable valve lift actuator of an engine can reduce pumping loss by controlling an intake amount of air by changing an elevating distance of a valve according to a running state of a vehicle, and the fuel efficiency and the efficiency of the engine can be improved by advancing the open time of the valve.

Abstract: The present disclosure relates to an apparatus for transmitting a position of a multi-axis transport system and a method thereof, and provides an apparatus for transmitting a position of a multi-axis transport system capable of providing an accurately detected position of a nondestructive system to a user by converting a sensor signal for measuring a position of the multi-axis transport system into position information (x, y, and z coordinates) which may be matched to the detected position of the nondestructive system and then transmitting the converted position information to the nondestructive system via high speed communication (e.g., Local Area Network (LAN) or Peripheral component Interconnect (PCI)), and a method thereof.

Abstract: Disclosed is a continuously variable valve lift actuator of an engine. The continuously variable valve lift actuator of an engine changes rotating angles of a rocker arm and a lift arm having a four-bar link structure to control an intake amount of air of an intake valve based on a running state of a vehicle, and adjusts a location and a length of a link bar by taking into consideration a rotating direction of a cam shaft and interference according to layout of the engine to advance an open time of a valve. The continuously variable valve lift actuator of an engine can reduce pumping loss by controlling an intake amount of air by changing an elevating distance of a valve according to a running state of a vehicle, and the fuel efficiency and the efficiency of the engine can be improved by advancing the open time of the valve.

Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

Abstract: A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.

Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

Abstract: A thin film transistor array panel includes a substrate; a gate line located over the substrate and including a gate pad portion; a data line located over the gate line and including a source electrode and a data pad portion; a drain electrode; a first passivation layer located over the data line and the drain electrode; an organic insulating layer located over the first passivation layer and having a contact hole; a first field generating electrode located over the organic insulating layer and having an opening; a second passivation layer located over the first field generating electrode; and a second field generating electrode located over the second passivation layer. The contact hole coincides with or is smaller than the opening, and the contact hole has a tapered structure.

Abstract: A method for predicting charging time of a battery for an electric vehicle is provided. The method includes differentiating a rapid charging and a slow charging. A necessary charging amount of the battery is calculated, and a reference current value that is stored in advance is detected for slow charging. A time required for slowly charging a battery is calculated using the necessary charging amount and the reference current value.

Abstract: A membrane electrode assembly for a fuel cell is provided that includes a membrane, electrodes on both sides of the membrane, respectively, and sub-gaskets bonded to the edges of the electrodes, respectively. In particular, the sub-gasket may be bonded to the membrane at a predetermined distance from the edge of the electrode.

Abstract: The present invention relates to a lighting apparatus which stably performs dimming control on a lamp implemented with light emitting diodes (LEDs) or the like. The lighting apparatus may improve power efficiency by driving power supplied to a lamp in a current regulation method, perform constant current control such that the lamp maintains constant brightness, perform dimming control for controlling the brightness of the lamp, commonly supply the power provided to the lamp to peripheral circuit modules, and perform constant voltage control such that a driving voltage supplied as power is maintained at a predetermined level or more.

Abstract: Provided is a field emission device having a simple structure and capable of pulse driving and local dimming. The field emission device turns a current flowing from each cathode electrode block on or off in response to a switching control signal having a very low voltage ranging from 0 to 5 V while a constant voltage is applied to an anode electrode and a gate electrode to control a field emission current. Compared with a conventional field emission device, the field emission device having a simple structure is capable of pulse driving and local dimming without using a separate pulse driving high voltage power source.

Abstract: The present invention relates to a poly(arylene ether) copolymer having a cation exchange group, a method for manufacturing the same, and use thereof. The poly(arylene ether) copolymer having the cation exchange group according to the present invention has excellent physical characteristics, ion exchanging capacity, metal ion adsorption capacity and a processability, and thus can be molded in various shapes and can be extensively applied to various fields such as recovering of organic metal, air purification, catalysts, water treatment, medical fields and separating of proteins.

Abstract: A liquid crystal display device includes a liquid crystal display panel including a plurality of data lines to which a data voltage is supplied, a plurality of gate lines to which a gate pulse is supplied, and a plurality of liquid crystal cells, a data drive circuit to invert a polarity of the data voltage in response to a polarity control signal and to output the data voltage to the data lines in response to a source output enable signal, a gate drive circuit to supply the gate pulse to the gate lines, and a POL/SOE logic circuit to invert the polarity control signal for every frame period except at Nth-multiple frame period (where N is a positive integer), wherein the POL/SOE logic circuit controls the polarity control signal at every Nth-multiple frame period such that the polarity of the data voltage is the same as the previous frame period and controls a pulse width of the source output enable signal at every Nth-multiple frame period to be longer than for the other frame periods.