Abstract: Disclosed is a fuel cell membrane electrode assembly (MEA) embodiment including an anode layer; at least one exchange membrane that is disposed on the anode layer as either a single-layered structure including one exchange membrane or a multi-layered structure including a plurality of exchange membranes, each exchange membrane of the at least one exchange membrane consisting of a film comprising hexagonal boron, and the at least one exchange membrane having a total thickness ranging from 0.3 to 3 nm; an interfacial binding layer that completely covers an exposed surface of one exchange membrane which is obverse to the anode layer and that consists of poly(methylmethacrylate) (PMMA) as a binder material; and a cathode layer formed on the interfacial binding layer. Alternately, a fuel cell membrane electrode embodiment may completely eliminate the interfacial binding layer and both embodiments provide superior fuel cell performance.

Abstract: The present invention is directed to a method and an apparatus for use in a wireless communication system. Specifically, the present invention is directed to a method comprising: receiving a plurality of first battery status information from a plurality of Relay UEs, wherein each first battery status information includes an estimated time length of residual battery life of a respective Relay UE; if a congestion is recognized, transmitting a first request signal for requesting additional information about battery status to the plurality of Relay UEs; as a response to the first request signal, receiving a plurality of second battery status information from the plurality of Relay UEs, wherein each second battery status information includes a charging status of a respective Relay UE; and selecting one of the plurality of Relay UEs based on the first and second battery status information, and an apparatus therefore.

Abstract: A composition for a stainless coating according to the present disclosure includes a sodium silicate, a lithium silicate, a polysiloxane, ethanol, and a residual solvent. The composition may be uniformly and smoothly coated on a curved, stainless steel surface, cleaning may be easier, and yellowing may be reduced or prevented.

Abstract: A lens assembly includes a lens including an optical portion to refract light and a flange portion extended along a periphery of at least a portion of the optical portion, and a lens barrel to accommodate the lens. The flange portion has a non-circular shape and includes a first di-cut portion on a first side surface of the flange portion, a second di-cut portion on a second side surface of the flange portion, and arc portions connecting the first di-cut portion and the second di-cut portion. A first distance between the first di-cut portion and an optical axis of the lens and a second distance between the second di-cut portion and the optical axis of the lens are smaller than a distance between respective opposite ends of the arc portions and the optical axis.

Abstract: A display device can include a gate driver configured to drive gate lines of a panel; a data driver configured to drive data lines of the panel; a timing controller configured to control operations of the gate driver and the data driver; and a level shifter integrated circuit (IC) configured to receive a plurality of control signals from the timing controller, and generate and output a plurality gate control signals for controlling driving of the gate driver, in which the plurality of control signals include an on clock and an off clock, and the level shifter IC stores the on clock and the off clock in buffers based on one or more control signals from the timing controller, generates a plurality of scan clocks by logically processing the on clock and the off clock, and outputs the plurality of scan clocks to the gate driver.

Abstract: Disclosed is an air conditioner to prevent deterioration of cooling or heating performance caused by re-introduction of cooling or heating air into a heat exchanger. The air conditioner includes a housing including an air discharge plate having a plurality of holes and an outlet, a heat exchanger located inside the housing, a blower fan configured to blow air heat-exchanged with the heat exchanger toward the air discharge plate or the outlet, a blade rotating between a guide position to guide a direction of air blown from the blower fan and discharged through the outlet and a closing position to close the outlet, wherein the blade includes a first blade and a second blade spaced apart from the first blade and configured to guide air blown from the blower fan toward the air discharge plate when the first blade is located at the closing position.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: A system and method for detecting brake judder in a vehicle may include storing information related to determining whether judder was generated when a vehicle was braked, and facilitating easy recognition of a vehicle in which judder was generated, on the basis of stored information without performing methods such as a separate driving reproduction test and a disc thickness measurement test when maintaining later.

Abstract: The present invention relates to: layered iron arsenide (FeAs), which is more particularly layered FeAs, which, unlike the conventional bulk FeAs, has a two-dimensional (2D) crystal structure, has the ability to be easily exfoliated into nanosheets, and has superconductivity; a method of preparing the same; and a FeAs nanosheet exfoliated from the same.

Abstract: The present invention proposes a radiation detector including a housing, a radiation detection panel accommodated in the housing and converting radiation incident from the outside of the housing into an electric signal, a printed circuit board electrically connected to the radiation detection panel and an intermediate plate that is disposed between the radiation detection panel and the printed circuit board, supports the radiation detection panel, and is electrically connected to the ground line of the printed circuit board, wherein the intermediate plate is transmissive to the radiation.

Abstract: A display apparatus includes: a display panel comprising a gate line, a data line and a plurality of display areas; a gate driver configured to output a gate signal to the gate line; a data driver configured to output a data voltage to the data line; a time sensor configured to sense an operation time of the display panel; and a voltage controller configured to adjust a back gate voltage according to the operation time sensed by the time sensor and the display areas.

Abstract: An optical device is provided. The optical device according to one aspect of the present invention comprises: a first main body including a first cover glass; a second main body including a second cover glass and connected to the first main body so as to be foldable; a lens module arranged in the first main body; a sensor module arranged in the second main body and facing the lens module when the first cover glass faces the second cover glass; and a driving unit for aligning the optical axis of the lens module with the optical axis of the sensor module which face each other.

Abstract: The present invention has the advantage of allowing a user to establish or release a seal between a container and a container lid with a single touch through a seal packing made of an elastic material and having a simple structure.

Abstract: A memory device can include a memory block operatively connected to a common source line and a plurality of bit lines, wherein the memory block includes first and second sub-blocks each having a respective position in the memory block relative to the common source line and the plurality of bit lines. The memory device can be operated by receiving a command and an address from outside the memory device and performing a precharge operation on the memory block in response to the command, using a first precharge path through the memory block or a second precharge path through the memory block based on the respective position of the first or second sub-block that includes a word line that is configured to activate responsive to the address.

Abstract: An air conditioner includes a heat exchanger configured to exchange heat with air introduced into a housing and a blowing fan configured to blow the air which is heat-exchanged with the heat exchanger to outside of the housing. The air conditioner may control a first and a second doors configured to open or close a first and second blowing ports provided in the housing and a guide blade configured to control paths in the housing, so that the air conditioner may blow the air of various flow.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a source, a drain, and a semiconductor channel between the source and the drain. In an embodiment, the semiconductor channel has a non-uniform strain through a thickness of the semiconductor channel. In an embodiment, the semiconductor device further comprises a gate stack around the semiconductor channel.

Abstract: The present invention relates to a catalyst having improved selectivity and reactivity and applied to preparing olefins by dehydrogenating C9 to C13 paraffin, and particularly to a technique for preparing a catalyst, which uses a heat-treated support having controlled pores, and most of metal components contained therein are distributed evenly in a support in the form of an alloy rather than in the form of each separate metal, thereby exhibiting high a conversion rate and selectivity when used in dehydrogenation.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, the semiconductor device comprises a substrate, and a first transistor over the substrate. In an embodiment, the first transistor comprises a first semiconductor channel above the substrate, a first gate dielectric surrounding the first semiconductor channel, and a first gate electrode over the first gate dielectric. In an embodiment, the semiconductor device further comprises a second transistor over the substrate. In an embodiment, the second transistor comprises a second semiconductor channel above the substrate, a second gate dielectric surrounding the second semiconductor channel, where the second gate dielectric is different than the first gate dielectric, and a second gate electrode over the second gate dielectric, where the first gate electrode and the second gate electrode comprise the same material.

Abstract: Embodiments disclosed herein include nanowire and nanoribbon devices with non-uniform dielectric thicknesses. In an embodiment, the semiconductor device comprises a substrate and a plurality of first semiconductor layers in a vertical stack over the substrate. The first semiconductor layers may have a first spacing. In an embodiment, a first dielectric surrounds each of the first semiconductor layers, and the first dielectric has a first thickness. The semiconductor device may further comprise a plurality of second semiconductor layers in a vertical stack over the substrate, where the second semiconductor layers have a second spacing that is greater than the first spacing. In an embodiment a second dielectric surrounds each of the second semiconductor layers, and the second dielectric has a second thickness that is greater than the first thickness.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a substrate, and a first transistor of a first conductivity type over the substrate. In an embodiment, the first transistor comprises a first semiconductor channel, and a first gate electrode around the first semiconductor channel. In an embodiment, the semiconductor device further comprises a second transistor of a second conductivity type above the first transistor. The second transistor comprises a second semiconductor channel, and a second gate electrode around the second semiconductor channel. In an embodiment, the second gate electrode and the first gate electrode comprise different materials.