Abstract: A semiconductor memory device includes a semiconductor substrate; a device isolation layer defining an active portion in the semiconductor substrate; a bit line structure intersecting the active portion on the semiconductor substrate; a first conductive pad between the bit line structure and the active portion; a bit line contact pattern between the first conductive pad and the bit line structure; a first bit line contact spacer covering a first sidewall of the first conductive pad; and a second bit line contact spacer covering a second sidewall of the first conductive pad, wherein the first conductive pad has a flat bottom surface that is in contact with a top surface of the active portion, and a width of the first bit line contact spacer is different from a width of the second bit line contact spacer.

Abstract: Provided are a compound capable of improving luminous efficiency, stability and lifespan of an organic electronic element employing the same, an organic electronic element employing the same, and an electronic device thereof.

Abstract: Provided are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element; an organic electronic element using the same; and an electronic device thereof.

Abstract: Provided are a compound capable of improving luminous efficiency, stability and lifespan of an organic electronic element employing the same, an organic electronic element employing the same, and an electronic device thereof.

Abstract: The present disclosure relates to handling tasks in parallel. In an embodiment, a method performed by a device comprises determining a type of tasks allowed to be performed in parallel based on a configuration received from a network, and performing tasks corresponding to the type while rejecting tasks not corresponding to the type.

Abstract: Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

Abstract: A method and apparatus for reducing orphan blocks for a blockchain is provided. The second wireless device obtains information on a first block generated by a first wireless device. The second wireless device initiates to generate a second block based on the information. The second wireless device generates an indication informing that a generation of the second block is initiated. The second wireless device shares the generated indication among participants of the blockchain.

Abstract: A semiconductor memory device includes: a device isolation pattern provided on a substrate to provide a first active portion and a second active portion; a first storage node pad disposed on the first active portion; a second storage node pad disposed on the second active portion; a pad separation pattern disposed between the first and second storage node pads; a word line disposed in the substrate to cross the first and second active portions; a bit line disposed on the pad separation pattern and crossing the word line; a buffer layer disposed on the pad separation pattern; and a mask polysilicon pattern interposed between the buffer layer and the bit line, wherein a side surface of the mask polysilicon pattern is substantially aligned to a side surface of the bit line, and the mask polysilicon pattern is vertically overlapped with the pad separation pattern.

Abstract: The present disclosure relates to an additive manufacturing system and additive manufacturing method comprising a printing platform that sprays a droplet and that deposits the droplet on a substrate or a build platform by attractive-force control of an electric field to form at least one layer of a laminated body in a layer by layer method; a flattening unit that flattens the laminated body formed by the printing platform to a preset height; a curing unit that cures the laminated body flattened by the flattening unit; and a controller that controls the printing platform, the flattening unit and the curing unit, thereby significantly increasing the manufacturing speed while improving the quality of additive manufacturing.

Abstract: A method and apparatus for input matching of a passive mixer are disclosed. The passive mixer includes a differential transistor pair including a first transistor and a second transistor, a first inductor having one end connected to the first transistor and another end connected to a ground, a second inductor having one end connected to the second transistor and another end connected to a ground, and a third inductor having one end for receiving a radio frequency (RF) signal and another end connected to a ground.

Abstract: A semiconductor memory device may include a device isolation pattern in a substrate and defining a first active section of the substrate and a second active section of the substrate, a first bit line crossing the center of the first active section, a second bit line crossing a center of the second active section, a bit-line contact between the first bit line and a center of the first active section, and a storage node pad on an end of the second active section. The first and second active sections may be spaced apart from each other. The center of the first active section may be adjacent to the end of the second active section. A level of a bottom surface of the first bit line may be lower than a level of a bottom surface of the second bit line.

Abstract: Disclosed herein is a communication control method of a vehicle user equipment (UE) for controlling vehicle-to-everything (V2X) message transmission between vehicle UEs through a V2X service in a wireless communication system. The communication control method of the vehicle UE includes receiving a V2X message from a first external vehicle UE, determining whether the V2X message is transmitted to a second external vehicle UE located in a coverage area of the vehicle UE, based on relaying information indicating whether the V2X message is relayed, and transmitting the V2X message to the second external vehicle UE, upon determining that the V2X message is transmitted to the second external vehicle UE. The relaying information includes at least one of active status information, relay probability information or residual life information.

Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Abstract: Exemplary methods of forming a silicon-oxygen-and-nitrogen-containing barrier layer are described. The methods include flowing deposition gases into a substrate processing region of a processing chamber, where the deposition gases include a silicon-containing gas and a nitrogen-containing gas. A deposition plasma is generated from the deposition gases in the substrate processing region. A silicon-oxygen-and-nitrogen-containing layer is deposited on a substrate from the deposition plasma, where the silicon-oxygen-and-nitrogen-containing layer is characterized by thickness of less than or about 2000 ?. The methods further include exposing a surface of the silicon-oxygen-and-nitrogen-containing layer to a treatment plasma to form a treated silicon-oxygen-and-nitrogen-containing layer, where the treatment plasma is formed from a nitrogen-containing gas and is silicon free.

Abstract: The present invention provides a portable device for injecting repair material, the portable device comprising: a chassis frame; tanks storing source materials; pumping means pumping the source materials; an injection nozzle mixing the source materials and injecting repair material into cracks; source material supplying means including: operating blocks connected to the pumping means; supplying pipes connected to the operating blocks and supplied with the source materials; transferring pipes connected to the operating blocks and transferring the source materials into the injection nozzle, and a pressure controller connected to the transferring pipe and controlling the source materials, wherein check valves for preventing backflow are installed inside the transferring pipes, wherein by adjusting another check valve connected to the pressure controller, an amount of the repair material for injection is controlled.

Abstract: A semiconductor memory device may include a substrate including a cell region and a peripheral region along a periphery of the cell region; a cell region isolation layer along the periphery of the cell region in the substrate and defining the cell region; a cell conductive line on the cell region and including a sidewall on the cell region isolation layer; a peripheral gate conductive layer on the peripheral region and including a sidewall on the cell region isolation layer; and an isolation insulating layer in contact with the sidewall of the cell conductive line and the sidewall of the peripheral gate conductive layer on the cell region isolation layer.

Abstract: Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

Abstract: A differential transmission line having a switch may comprise: a first transmission line comprising a first distribution element having a first impedance; a second transmission line comprising a second distribution element having a second impedance; and a first switch block connected between a first end of the first transmission line and a first end of the second transmission line, wherein the first switch block comprises a first switch connected in series to the first end of the first transmission line, a second switch connected in series to the first end of the second transmission line, a first-cross capacitor connected between a first terminal of the first switch and a second terminal of the second switch, and a second cross-capacitor connected between a first terminal of the second switch and a second terminal of the first switch.

Abstract: A multilayer electronic component includes: a body and an external electrode disposed on the body, wherein the external electrode includes a conductive resin layer containing a bisphenol A-based resin and a biphenyl-based resin with a specific mixing ratio (e.g., a ratio of a content of the biphenyl-based resin with respect to a total content is 10 wt % or more and 50 wt % or less). Such a resin mixing ratio between the bisphenol A-based resin and the biphenyl-based resin can lead to 0.337?2*C/A?0.367 or 0.048?B/A?0.14, with an aromatic ring peak intensity (A), a carbonyl peak intensity (B), and an alcohol peak intensity (C) in a Fourier transform infrared spectroscopy (FT-IR) analysis. The multilayer electronic component showing such peak intensity characteristics can suppress oxidation of a conductive resin layer while also securing excellent adhesive strength of the conductive resin layer.

Abstract: A multilayer electronic component includes: a body including a dielectric layer and a plurality of internal electrodes alternately disposed with the dielectric layer; and external electrodes disposed on the body, wherein the external electrodes respectively include an electrode layer disposed on the body and connected to the plurality of internal electrodes and a conductive resin layer disposed on the electrode layer and including a first conductive particle, a second conductive particle, and a resin, wherein the first conductive particle is a Cu particle, the second conductive particle is a Cu particle having a surface on which Ag is disposed.