Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

Abstract: There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.

Abstract: Disclosed herein are an intelligent system and method for monitoring a generator reactive power limit using machine model parameters. The intelligent system and method for monitoring a generator reactive power limit using machine model parameters can calculate a maximum reactive power limit corresponding to over-excitation and a generator terminal voltage corresponding to under-excitation, estimate a correct field current even when system variable are changed, and monitor the generator reactive power limit by using machine model parameters and a one-machine infinite bus, to thereby supply a maximum or minimum reactive power to a power system within an allowable generator reactive power limit and prevent a generator trip caused by the reactive power limit and a power failure over a wide area.

Abstract: A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Abstract: A method of forming a nitride semiconductor device is disclosed. An n-type GaN layer is formed on a substrate. A self assembled nitride semiconductor quantum dot layer is formed on the n-type GaN layer by growing InyGa(1-y)N (0.3?y?1) directly on the n-type GaN layer. A resonance tunnel layer is formed on the n-type GaN layer to cover the nitride semiconductor quantum dot layer. An active layer is formed on the resonance tunnel layer. A p-type nitride semiconductor layer is formed on the active layer. The active layer contains a quantum well layer and a quantum barrier layer, and the resonance tunnel layer has a band gap energy greater than that of the quantum well layer.

Abstract: The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.

Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: A chip includes a chip body having an upper surface on which an active surface is formed, and at least one side protrusion terminal protruding from a lateral surface of the chip body and electrically connected to the active surface. As a plurality of semiconductor chips or parts may be connected to one another on a single package, a one-chip or one-package of a package is possible and the thickness of the package can be reduced.

Abstract: Techniques for reducing the frequency split between the Coriolis-coupled modes in disc resonator gyroscopes (DRGs) by perturbing the mass distribution on the disc resonator based on an identified model are disclosed. A model-identification method of tuning a resonator comprises perturbing the mass and measuring a frequency response matrix of the resonator. The frequency response matrix includes a plurality of inputs and a plurality of outputs and the resonator has a plurality of coupled resonance modes. A reduced structural mechanics matrix model of the resonator in sensor and actuator coordinates is identified from the measured frequency response matrix and analyzed to determine generalized eigenvectors of the structural mechanics model and their variations due to selected mass perturbations which is then estimated to improve degeneracy of the plurality of coupled resonance modes based on the generalized eigenvectors of the mass and the stiffness.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: Disclosed herein is a method of forming a metal wiring of a semiconductor device.