Abstract: The present invention relates to a method for manufacturing a carbon-sulfur composite, a carbon-sulfur composite manufactured by the method, and an electrochemical device including the same. Since the carbon-sulfur composite manufactured by the carbon-sulfur composite manufacturing method of the present invention includes the hollow carbon ball having the inner hollow which is uniformly filled with sulfur, a sulfur content increases to increase a capacity characteristic increases. In addition, even though sulfur is changed into a liquid state during charge and discharge processes, an electrode structure is not destroyed to realize a stable lifetime characteristic.

Abstract: A method for an electronic device includes amplifying a signal by a first power amplifier, obtaining a temperature of the first power amplifier during the amplification of the signal, comparing the temperature of the first power amplifier to a predetermined threshold value, and switching the first power amplifier to a second power amplifier for amplifying a signal if the temperature of the first power amplifier is higher than a threshold value. An electronic device for switching power amplifiers are also disclosed.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: A cargo tank for an extremely low temperature substance carrier according to the present invention arranges a first cargo tank wall having a primary corrugated panel to prevent cracks caused by contraction and easily absorb impact caused by liquefied gas sloshing to prevent defects occurring in the cargo tank, forms auxiliary corrugation on each of the first, second and third cargo tank walls to prevent defects caused by contraction and more easily absorb impact caused by liquefied gas sloshing, and selectively applies the first to third cargo tank walls having different structures to respective parts of the cargo tank where different sloshing phenomena occur to improve reliability of the cargo tank.

Abstract: The present invention relates to an inner tank supporting structure for an LNG storage tank for a ship, which does not restrict expansion or contraction of an inner tank in circumferential and lengthwise directions while the inner tank is expanded or contracted due to a temperature change caused by storage and discharge of LNG.

Abstract: Provided are a method of packetizing encoded symbols and an apparatus using the same. The method includes an encoded symbol and target packet selection step of deciding a first source symbol and selecting an unpacketized first encoded symbol and a target packet into which the unpacketized first encoded symbol is inserted if there is the unpacketized first encoded symbol of at least one first encoded symbol, which is an encoded symbol of the first source symbol generated using an AND-OR tree structure, and a packetization step of generating a second source symbol based on at least one unpacketized first encoded symbol by use of the AND-OR tree structure, generating at least one second encoded symbol based on the second source symbol by use of the AND-OR tree structure, and packetizing at least one of second encoded symbols into the target packet along with the first encoded symbol.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: Systems and methods for processing data are provided. A system can include a plurality of cores and a core manager. A load balancing unit can check and compare loads of the cores. An address mapping unit can perform a mapping process based on the loads of the cores, and the core manager can route data appropriately, thereby improving the overall performance of the system.

Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

Abstract: A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: Provided is a method of manufacturing a hexagonal boron nitride nanosheet to mass-produce a high-quality hexagonal boron nitride nanosheet at a low temperature in a safe process. The method of manufacturing a hexagonal boron nitride nanosheet includes (a) obtaining an alkali metal ion or alkali earth metal ion from a salt mixture including at least two kinds of alkali metal salt or alkali earth metal salt, (b) preparing a hexagonal boron nitride interlayer compound by inserting the alkali metal ion or alkali earth metal ion into layers of hexagonal boron nitride, and (c) obtaining a hexagonal boron nitride nanosheet by removing the alkali metal ion or alkali earth metal ion from the hexagonal boron nitride interlayer compound.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.

Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.