Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract: There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: Disclosed is a device for separating a propulsion system from a missile, the device including a locking unit configured to fix a propulsion system to a missile, a string disposed to cross a rear portion of the propulsion system to be broken by heat of the propulsion system, and an unlocking unit configured to unlock the missile by the broken string, whereby the number of additional components of an unlocking system can be reduced as many as possible so as to simplify the configuration of the apparatus, resulting in guaranteeing an enhanced performance of the missile, an easy assembly of the missile, and a reduction of a fabricating cost.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

Abstract: A small-sized optical disc drive includes one voice coil motor magnet within which a tracking coil and two focusing coils are disposed such that the tracking coil straddles the two poles of permanent magnets that are adjacently disposed. The two focusing coils are disposed on either side of the tracking coil, with each of the two focusing coils being only disposed over one of the permanent magnets.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

Abstract: The present invention relates to an apparatus for measuring a residual stress of an optical fiber. More particularly, the present invention relates to an apparatus for measuring residual stress of an optical fiber which is provided with a variable polarizer of which rotation is unnecessary instead of a rotary analyzer to measure the residual stress in high resolution and at high speed.

Abstract: Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

Abstract: An objective lens drive apparatus configured to drive an objective lens that focuses a laser beam on an optical disk is disclosed, the apparatus including a holding member that holds the objective lens; at least one pair of drive magnets arranged to face each other at opposite sides of the holding member with respect a tangential direction that is parallel to a tangential line of the optical disk, the drive magnets having protruding end portions that protrude from each side of the holding member with respect to a tracking direction that is parallel to a radial direction of the optical disk; and plural drive coils configured to drive the holding member through interaction with the drive magnets, at least one of the drive coils being arranged on each side of the drive magnets with respect to the tangential direction.

Abstract: A display device and manufacturing method thereof suitable for providing a slim and lightweight display device with a low manufacturing cost includes a display panel having first and second substrates opposing each other, a first sensor electrode on the first substrate, a third substrate spaced apart from the first substrate, a second sensor electrode on a backside of a third substrate to come into contact with the first sensor electrode upon a user's touch, a contact electrode on each of the second and third substrates, and a short-circuit point between the contact electrodes on the second and third substrates to connect together the contact electrodes.

Abstract: There is provided a compact optical disc apparatus having a small footprint actuator. A tracking coil of a swing arm-type actuator is disposed substantially perpendicular to an arm and on the opposite side to an optical disc loading slot with respect to the line connecting the center of rotation of the optical disc to the center of swing movement of the actuator. A pair of permanent magnets are disposed such that they face the tracking coil and they are opposite in polarity. The tracking coil is disposed on both the permanent magnets such that the tracking coil straddles the boundary of the pair of permanent magnets.

Abstract: Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

Abstract: A small-sized optical disc drive includes one voice coil motor magnet within which a tracking coil and two focusing coils are disposed such that the tracking coil straddles the two poles of permanent magnets that are adjacently disposed. The two focusing coils are disposed on either side of the tracking coil, with each of the two focusing coils being only disposed over one of the permanent magnets.

Abstract: An automatic voice announcement apparatus for sending an automatic voice announcement message to a subscriber connected to an exchange from the beginning of the message includes: a message receiving memory for receiving a voice message recording and playback commands from a high-level processor; a digital signal processor for receiving the commands from the message receiving memory, and for generating control signals for recording and playing back a voice message; a message controller for sequentially recording a voice message in corresponding areas in response to a voice message recording control signal from the digital signal processor, and for playing back the voice message from the beginning of the message by selecting a specific channel in response to a voice message playback control signal from the digital signal processor; and a voice memory having a plurality of cards to which channels are assigned, the voice message being stored in one of the channels.

Abstract: The apparatus for controlling a power supply, which supplies power to loads, includes a low frequency clock generator generating a low frequency clock, a high frequency clock generator generating a high frequency clock, and a controller. The controller controls operation of the power supply. While operating at the low frequency clock in a first mode, if the controller receives an input signal, the controller determines if the input signal includes a predetermined portion. The controller then switches to operation at the high frequency clock in a second mode if the input signal is determined to include the predetermined portion.

Abstract: A power supply circuit includes a power converter and a control circuit. The power converter converts AC power to DC power, and the control circuit controls operation of the power converter. The control circuit repeatedly enables the conversion operation of the power converter for a first predetermined period of time and disables the conversion operation for a second predetermined period of time, greater than said first predetermined period of time, in a power saving mode of operation.

Abstract: A signaling test apparatus for testing a trunk register transmitting/receiving signaling, a subscriber service signal tone, a subscriber DTMF transmitting/receiving signaling, and a CCT transmitting/receiving signaling in a switching system. The signaling test apparatus includes a computer interface for communicating with a computer, a PCM interface for communicating with the switching system, a microprocessor for receiving a test command transmitted from the computer through the computer interface and generating a control signal to perform a corresponding test mode, a test signal storage memory for supplying a plurality of test signals having a predetermined frequency to the switching system through the PCM interface under the control of the microprocessor, and a digital signal processor for analyzing the test signal which is fed back from the switching system and received through the PCM interface under the control of the microprocessor.