Patents by Inventor Dong-kuk Lee
Dong-kuk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482653Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.Type: GrantFiled: January 31, 2019Date of Patent: October 25, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Kuk Lee, Dae Young Lee, Moon Sub Kim, Sung Jin Ahn, Seung Hwan Lee, Dong Kyun Yim, Woo Seok Jang
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Patent number: 10644205Abstract: A light-emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmissive layer directing light from the LED in an upward direction; a wavelength conversion layer changing a wavelength of the light emitted through the light-transmissive layer; and a coating layer covering the light-transmissive layer and reflecting the light emitted through the light-transmissive layer in the upward direction. In a plan view of the light-transmissive layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to an end of an extension of a diagonal of the LED is greater than or equal to a length from the first point to a third point corresponding to an end of an extension of a side of the LED.Type: GrantFiled: September 12, 2018Date of Patent: May 5, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-kuk Lee, Moon-sub Kim, Sung-jin Ahn, Suk-ho Yoon, Seung-hwan Lee
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Publication number: 20190371988Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.Type: ApplicationFiled: January 31, 2019Publication date: December 5, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Kuk LEE, Dae Young LEE, Moon Sub KIM, Sung Jin AHN, Seung Hwan LEE, Dong Kyun YIM, Woo Seok JANG
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Publication number: 20190280162Abstract: A light-emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmissive layer directing light from the LED in an upward direction; a wavelength conversion layer changing a wavelength of the light emitted through the light-transmissive layer; and a coating layer covering the light-transmissive layer and reflecting the light emitted through the light-transmissive layer in the upward direction. In a plan view of the light-transmissive layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to an end of an extension of a diagonal of the LED is greater than or equal to a length from the first point to a third point corresponding to an end of an extension of a side of the LED.Type: ApplicationFiled: September 12, 2018Publication date: September 12, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-kuk LEE, Moon-sub KIM, Sung-jin AHN, Suk-ho YOON, Seung-hwan LEE
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Patent number: 10276629Abstract: A light emitting device package and a method of manufacturing the light emitting device package are provided. The light emitting package includes a light emitting stack including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer sequentially stacked, and having a first surface provided by the first conductivity-type semiconductor layer and a second surface provided by the second conductivity-type semiconductor layer and opposing the first surface; a first electrode structure disposed on a portion of the first surface and connected to the first conductivity-type semiconductor layer; a sealing portion disposed adjacent to the light emitting stack; an insulating layer disposed between the light emitting stack and the sealing portion; and a first metal pad disposed on the second surface and passing through the insulating layer at a side of the light emitting stack to connect to the first electrode structure.Type: GrantFiled: July 1, 2016Date of Patent: April 30, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Kuk Lee, Yong Min Kwon, Hyung Kun Kim
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Patent number: 9997670Abstract: A semiconductor light emitting device package includes a light emitting structure having a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first surface, and a second surface, a first electrode and a second electrode disposed on the second surface of the light emitting structure; an insulating layer, a first metal pad and a second metal pad disposed on the insulating layer, and each having a surface with a first fine uneven pattern so as to have a first surface roughness, a first bonding pad and a second bonding pad disposed on the first metal pad and the second metal pad, respectively, and each having a surface with a second fine uneven pattern so as to have a second surface roughness, and an encapsulant encapsulating the first bonding pad, the second bonding pad, the first metal pad, and the second metal pad.Type: GrantFiled: January 19, 2017Date of Patent: June 12, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Won Park, Yong Min Kwon, Hyung Kun Kim, Dong Kuk Lee, Dae Yeop Han
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Publication number: 20170365739Abstract: A semiconductor light emitting device package includes a light emitting structure having a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first surface, and a second surface, a first electrode and a second electrode disposed on the second surface of the light emitting structure; an insulating layer, a first metal pad and a second metal pad disposed on the insulating layer, and each having a surface with a first fine uneven pattern so as to have a first surface roughness, a first bonding pad and a second bonding pad disposed on the first metal pad and the second metal pad, respectively, and each having a surface with a second fine uneven pattern so as to have a second surface roughness, and an encapsulant encapsulating the first bonding pad, the second bonding pad, the first metal pad, and the second metal pad.Type: ApplicationFiled: January 19, 2017Publication date: December 21, 2017Inventors: Ki Won PARK, Yong Min KWON, Hyung Kun KIM, Dong Kuk LEE, Dae Yeop HAN
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Patent number: 9691954Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillarType: GrantFiled: May 24, 2016Date of Patent: June 27, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-kuk Lee, Si-han Kim, Hyung-kun Kim, Yong-min Kwon, Geun-woo Ko
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Patent number: 9601665Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.Type: GrantFiled: August 17, 2015Date of Patent: March 21, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Hyun Sim, Geon Wook Yoo, Mi Hyun Kim, Dong Hoon Lee, Jin Bock Lee, Je Won Kim, Hye Seok Noh, Dong Kuk Lee
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Publication number: 20170069681Abstract: A light emitting device package and a method of manufacturing the light emitting device package are provided. The light emitting package includes a light emitting stack including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer sequentially stacked, and having a first surface provided by the first conductivity-type semiconductor layer and a second surface provided by the second conductivity-type semiconductor layer and opposing the first surface; a first electrode structure disposed on a portion of the first surface and connected to the first conductivity-type semiconductor layer; a sealing portion disposed adjacent to the light emitting stack; an insulating layer disposed between the light emitting stack and the sealing portion; and a first metal pad disposed on the second surface and passing through the insulating layer at a side of the light emitting stack to connect to the first electrode structure.Type: ApplicationFiled: July 1, 2016Publication date: March 9, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Kuk LEE, Yong Min KWON, Hyung Kun KIM
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Publication number: 20170033268Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillarType: ApplicationFiled: May 24, 2016Publication date: February 2, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-kuk LEE, Si-han KIM, Hyung-kun KIM, Yong-min KWON, Geun-woo KO
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Patent number: 9559260Abstract: There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.Type: GrantFiled: May 28, 2015Date of Patent: January 31, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Kuk Lee, Geun Woo Ko, Geon-Wook Yoo, Nam Goo Cha
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Patent number: 9537051Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: GrantFiled: August 28, 2015Date of Patent: January 3, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Goo Cha, Jin Bock Lee, Dong Kuk Lee, Dong Hyun Cho, Min Wook Choi
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Patent number: 9525100Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.Type: GrantFiled: February 12, 2016Date of Patent: December 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Geon-Wook Yoo, Nam-goo Cha, Dong-kuk Lee, Dong-hoon Lee
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Publication number: 20160351755Abstract: In one embodiment, a light emitting device package includes a light emitting device including a substrate and a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, stacked on the substrate; a reflective conductive layer provided on the light emitting structure; and a first electrode and a second electrode overlying the reflective conductive layer separated from each other in a first region. The first electrode and the second electrode are electrically insulated from the reflective metal layer and penetrate through the reflective metal layer to be electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively.Type: ApplicationFiled: May 26, 2016Publication date: December 1, 2016Inventors: Dong Kuk LEE, Yong Min KWON, Hyung Kun KIM, Dae Yeop HAN
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Publication number: 20160064609Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: ApplicationFiled: August 28, 2015Publication date: March 3, 2016Inventors: Nam Goo CHA, Jin Bock LEE, Dong Kuk LEE, Dong Hyun CHO, Min Wook CHOI
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Publication number: 20160064607Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.Type: ApplicationFiled: April 28, 2015Publication date: March 3, 2016Inventors: Geon Wook YOO, Sung Hyun SIM, Dong Kuk LEE, Hye Seok NOH
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Publication number: 20160049553Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.Type: ApplicationFiled: August 17, 2015Publication date: February 18, 2016Inventors: Sung Hyun SIM, Geon Wook YOO, Mi Hyun KIM, Dong Hoon LEE, Jin Bock LEE, Je Won KIM, Hye Seok NOH, Dong Kuk LEE
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Publication number: 20160020358Abstract: There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.Type: ApplicationFiled: May 28, 2015Publication date: January 21, 2016Inventors: Dong Kuk LEE, Geun Woo KO, Geon-Wook YOO, Nam Goo CHA
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Patent number: 6486016Abstract: A method for forming a self aligned contact of a semiconductor device, comprises the steps of: forming a conductive line and a hard mask on a structure of a semiconductor substrate; forming spacers constructed by an insulation material on the sidewalls of the conductive line and the hard mask; forming an interlayer insulating layer on the resultant material and then etching the interlayer insulating layer at the contact part; forming an etching barrier layer on the surface of the substrate between the spacers; forming an uneven buffer layer on the resultant material, the uneven buffer deposited on the hard mask thickly and on the etching barrier layer thinly by using a material having a bad step coverage; and forming a self aligned contact by sequentially etching the uneven buffer layer and the etching barrier layer and then opening the surface of the substrate between the spacers.Type: GrantFiled: August 27, 2001Date of Patent: November 26, 2002Assignee: Hynix Semiconductor, Inc.Inventors: Jong-sam Kim, Il-wook Kim, Dong-kuk Lee, Phil-goo Kong