Abstract: A method for forming a self aligned contact of a semiconductor device, comprises the steps of: forming a conductive line and a hard mask on a structure of a semiconductor substrate; forming spacers constructed by an insulation material on the sidewalls of the conductive line and the hard mask; forming an interlayer insulating layer on the resultant material and then etching the interlayer insulating layer at the contact part; forming an etching barrier layer on the surface of the substrate between the spacers; forming an uneven buffer layer on the resultant material, the uneven buffer deposited on the hard mask thickly and on the etching barrier layer thinly by using a material having a bad step coverage; and forming a self aligned contact by sequentially etching the uneven buffer layer and the etching barrier layer and then opening the surface of the substrate between the spacers.

Abstract: There is disclosed a method for removing cholesterol from milk and cream at a high efficiency without deleteriously affecting the product quality. After homogenization, milk is added with .beta.-cyclodextrin at an amount of 0.5-5% (w/v). The milk is stirred at 4-30.degree. C. and at 200-2,000 rpm for 5-30 min, followed by centrifugation at 22-555.times.g for 5-30 min. Similarly, cream is added with .beta.-cyclodextrin at an amount of 1-20% (w/v) and then, treated by stirring at 20-60.degree. C. and at 400-4,000 rpm for 5-60 min and centrifuging at 222-444.times.g.