Abstract: One embodiment of the present invention provides an ecotoxicity monitoring device using Aliivibrio fischeri, and an ecotoxicity monitoring method using the same. The ecotoxicity monitoring device includes a reaction tank module, an Aliivibrio fischeri culture unit, a diluted water supply unit, a sample supply unit, an optical measurement unit, a control unit and an analysis unit, wherein the analysis unit is configured to calculate a correction coefficient based on the initial light quantity value of a reference reaction tank measured through the optical measurement unit and the final light quantity value measured after a predetermined time has elapsed, and calculate the corrected light quantity values of a sample reaction tank and a dilution reaction tank based on the calculated correction coefficient.

Abstract: According to an aspect of the present disclosure, a cart for optical coherence tomography includes a rotary catheter unit; a main body including a receiving member configured to receive the rotary catheter unit; a mobile unit coupled to a lower part of the main body and configured to move the main body on the ground; and a display unit connected to an upper part of the main body and configured to output information generated by the rotary catheter unit. Wherein the display unit is located inside at least two side surfaces of the main body.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device may include: a substrate comprising an active pattern; a source/drain pattern on the active pattern; a device isolation layer at a lateral side of the active pattern; a lower power structure below a top surface of the substrate; a lower contact penetrating the device isolation layer and connecting the source/drain pattern to the lower power structure; and a power delivery network layer below the top surface of the substrate, wherein the lower power structure comprises a connecting portion connected to the lower contact, and wherein the lower contact comprises a protruding portion buried in the connecting portion.

Abstract: A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

Abstract: The present disclosure relates to an apparatus for preparing an oligomer, the apparatus including: a reactor for oligomerizing a feed stream containing a fed monomer; a stirrer inserted into a hole formed in an upper portion of the reactor; and a solvent transfer line extending inward from a side of the reactor, wherein the stirrer includes a rotating shaft vertically extending downward from the upper portion of the reactor, and a blade having a conical shape whose vertex is positioned at a lower end of the rotating shaft and outer diameter increases from a bottom toward a top, and the solvent transfer line has a plurality of spray nozzles formed in a direction toward the blade.

Abstract: A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

Abstract: The present invention provides a a nanostructure which includes: a core comprising one or more planes configured to come into planar contact with at least one plane of an ice crystal; and an oligopeptide which is conjugated to at least one plane of the core and comprises (Thr)n-, (Ala)n-, (Ser)n-, or (Gly)n-, wherein the nanostructure is a polyhedron-shaped nanostructure present in water in a colloidal form to control freezing, and n is an integer of 2 to 7.

Abstract: Provided is a pharmaceutical composition including attenuated Streptococcus pneumoniae strains, and a method thereof for prevention or treatment of inflammatory diseases, respiratory viral infections, bacterial infectious diseases, or allergic diseases.

Abstract: The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the gate structure, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern, wherein with respect to an upper surface of the active pattern, a height of an upper surface of the gate electrode is same as a height of an upper surface of the source/drain contact, and the source/drain contact comprises a lower source/drain contact and an upper source/drain contact on the lower source/drain contact, may be provided.

Abstract: An electronic device is provided. An electronic device includes a radio frequency integrated circuit (RFIC) chip, and an antenna array electrically connected to the RFIC chip, the antenna array including a first face and a second face facing each other in a first direction, and a third face and a fourth face connecting the first and second faces to each other and facing each other in a second direction intersecting the first direction, the antenna array including a plurality of substrates sequentially stacked in a third direction intersecting a plane defined by the first and second directions, first and second antenna modules on the plurality of substrates and sequentially arranged along the first direction, a first metal partition-wall including at least one metal via extending through the plurality of substrates in the third direction, and a second metal partition-wall surrounding the first to fourth faces.

Abstract: The present disclosure discloses a method for preparing a hybrid-type fluorine-based nonionic surfactant capable of producing a high purity material in a high yield. By preparing a hybrid-type fluorine-based nonionic surfactant according to the present disclosure, the surfactant is mass-produced in a high yield through controlling reaction conditions including a solvent.

Abstract: The present disclosure discloses a fluoroalkyl glycerin derivative usable as an excellent surfactant by having functional groups and the number of carbon atoms controlled in the molecular structure, and its use as a surfactant. A fluoroalkyl glycerin derivative according to the present disclosure is used as a fluorine-based nonionic surfactant, and replaces existing fluoro compounds as well as having excellent surfactant properties compared to existing surfactants having a linear alkyl group.

Abstract: A machine learning technology-based fault management system for network equipment that supports SDN OpenFlow protocol that includes an L2 switch or a router, which is network equipment connected to a client; and an Artificial Intelligence (AI)-based Software Defined Network (SDN) controller requested for management commands for each scenario when the L2 switch or the router, which is network equipment connected to the client, encounters a network fault so that a Simple Network Management System (SNMP) agent installed in the L2 switch and the router determines the type of fault occurred on a network and AI is employed to recover from a current fault through learning results from past data. An effect is achieved that not only service quality is improved through real-time fault management using an AI-based automatic response against a network fault but also a fault is precisely overcome by using the AI-based automatic response.

Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and that extends in a first horizontal direction, a field insulating layer disposed on the substrate and that surrounds a sidewall of the active pattern, a gate electrode disposed on the field insulating layer and that extends in a second horizontal direction, a source/drain region disposed on a side of the gate electrode, a first interlayer insulating layer disposed on the field insulating layer and that surrounds a portion of a sidewall of the source/drain region, a second interlayer insulating layer disposed on the first interlayer insulating layer and that surrounds a sidewall of the gate electrode, and a source/drain contact that penetrates through the second interlayer insulating layer and is electrically connected to the source/drain region. The source/drain contact includes a skirt that protrudes from a lower sidewall toward the second interlayer insulating.

Abstract: A semiconductor device includes: a substrate; an active pattern and a field insulating layer surrounding a sidewall of the active pattern on the substrate; first and second gate electrodes on the active pattern and extending in a direction different from that of the active pattern; an interlayer insulating layer surrounding a sidewall of each of the first and second gate electrodes; a gate spacer on opposing sidewalls of each of the first and second gate electrodes that includes a first sidewall and a second sidewall opposite the first sidewall in the first horizontal direction, each of which contacts the interlayer insulating layer; and a first gate cut dividing the second gate electrode into two portions, wherein the first gate cut includes a same material as the gate spacer; and wherein a first width of the first gate cut is smaller than a second width of the gate spacer.

Abstract: A semiconductor device is provided.

Abstract: The system for preparing silica aerogel according to the present invention comprises a raw material supply part transferring at least one raw material of de-ionized water, water glass, a surface modifier, an inorganic acid, and an organic solvent to a mixing part, the mixing part mixing the raw materials transferred from the raw material supply part to produce silica wet gel, a drying part drying the silica wet gel to produce the silica aerogel, a recovery part recovering a portion of the vaporized raw material of the raw materials used in at least one of the mixing part and the drying part, and a heat transfer part transferring heat to at least one of the mixing part and the drying part, wherein the system further comprises a pulverizing part that pulverizes the raw material from the row material supply part to the mixing part.

Abstract: A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

Abstract: A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

Abstract: A machine learning technology-based fault management system for network equipment that supports SDN OpenFlow protocol that includes an L2 switch or a router, which is network equipment connected to a client; and an Artificial Intelligence (AI)-based Software Defined Network (SDN) controller requested for management commands for each scenario when the L2 switch or the router, which is network equipment connected to the client, encounters a network fault so that a Simple Network Management System (SNMP) agent installed in the L2 switch and the router determines the type of fault occurred on a network and AI is employed to recover from a current fault through learning results from past data. An effect is achieved that not only service quality is improved through real-time fault management using an AI-based automatic response against a network fault but also a fault is precisely overcome by using the AI-based automatic response.