Abstract: The present invention relates to a slot die coating device and a control method therefor.

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Abstract: The system for preparing silica aerogel according to the present invention comprises a raw material supply part transferring at least one raw material of de-ionized water, water glass, a surface modifier, an inorganic acid, and an organic solvent to a mixing part, the mixing part mixing the raw materials transferred from the raw material supply part to produce silica wet gel, a drying part drying the silica wet gel to produce the silica aerogel, a recovery part recovering a portion of the vaporized raw material of the raw materials used in at least one of the mixing part and the drying part, and a heat transfer part transferring heat to at least one of the mixing part and the drying part, wherein the system further comprises a pulverizing part that pulverizes the raw material from the row material supply part to the mixing part.

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Abstract: A display device includes a first substrate defining a top surface thereof, a bottom surface thereof facing the top surface, and side surfaces thereof connecting the top and bottom surfaces to each other. The side surfaces included: a first side surface defined by: a first patterned surface including a first pattern of which a length thereof extends in a diagonal direction in a plan view of the first patterned surface, and a second patterned surface which extends obliquely from an upper end of the first patterned surface, the second patterned surface including a second pattern of which a length thereof extends in a perpendicular direction from the upper end of the first patterned surface in a plan view of the second patterned surface.

Abstract: Provided are a method of manufacturing a cathode active material coating solution for a secondary battery including preparing a mixed solution by dispersing a metal precursor and a chelating agent in a glycol-based solvent, performing primary heating on the mixed solution, and performing secondary heating on the mixed solution, and a cathode active material coating solution for a secondary battery manufactured by the above method.

Abstract: Disclosed is a heterophasic polymer composition for environmentally friendly cable insulation layers that exhibits excellent electrical, mechanical, and thermal properties while realizing the flexibility, bendability, and impact resistance performance characteristics of polypropylene. The heterophasic polymer composition for cable insulation layers is configured such that propylene copolymer particles each having a predetermined size are dispersed in a polypropylene matrix.

Abstract: A method of fabricating a semiconductor device is provided as follows. A strain relaxed buffer (SRB) layer is formed on a substrate. The SRB layer is formed of a first silicon germanium alloy (SiGe) layer which has a first atomic percent of germanium (Ge) atoms. A heterogeneous channel layer is formed on the SRB layer. The heterogeneous channel layer includes a silicon layer on a first region of the SRB layer and a second SiGe layer on a second region of the SRB layer. The second SiGe layer includes a second atomic percent of germanium greater than the first atomic percent of germanium atoms. The silicon layer is in contact with the second SiGe layer.

Abstract: The present invention relates to a slot die coating apparatus. A slot die coating apparatus according to an embodiment of the present invention includes: a slot die configured to perform a coating process by applying ink to a substrate; an image capturing unit disposed adjacent to the slot die and configured to capture a state of the slot die and a state of ink applied to the substrate during the coating process; and a control unit configured to compare an image captured by the image capturing unit with a reference image and control an operation of the slot die and a transfer of the substrate.

Abstract: Disclosed is a positioning system and a node network. A terminal included in the present invention is characterized by an invisible light sensing unit that detects invisible light signals, that were emitted from one or more signaling nodes with the same intensity, carrying the location data of each signaling node; and a controller that calculates the user's position based on the location data included in one or more invisible light signals and their received signal strength.

Abstract: The present invention relates to a cathode active material including a lithium-containing transition metal oxide and two or more metal composite oxide layers selected from the group consisting of Chemical Formulae 1 to 3 which are coated on the surface of the lithium-containing transition metal oxide, a method of manufacturing the same, and a cathode for a secondary battery including the cathode active material, M(C2H5O2)n??[Chemical Formula 1] M(C6H(8-n)O7)??[Chemical Formula 2] M(C6H(8-n)O7)(C2H5O2)??[Chemical Formula 3] (where M, as a metal desorbed from a metal precursor, represents at least one metal selected from the group consisting of Mg, Ca, Sr, Ba, Y, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ir, Ni, Zn, Al, Ga, In, Si, Ge, Sn, La, and Ce, and n is an integer between 1 and 4).

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.