Abstract: Disclosed herein are a method and device for sensing avian influenza viruses, using terahertz electromagnetic waves. By the method, even a trace amount of avian influenza viruses in a liquid state can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, avian influenza viruses even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto avian influenza viruses through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of an avian influenza virus of interest.

Abstract: An apparatus for cooling a spent fuel pool having a heat exchanger includes a cooling water pool positioned above the spent fuel pool; a floating device configured to be elevated according to a water level of a cooling water in the spent fuel pool; and an emergency cooling water supply pipe configured to form a path through which the cooling water of the cooling water pool is moved to the spent fuel pool and configured to include a floating valve that opens or closes a flow passage of the cooling water in connection with the elevation of the floating device.

Abstract: Disclosed herein are a method and device for sensing avian influenza viruses, using terahertz electromagnetic waves. By the method, even a trace amount of avian influenza viruses in a liquid state can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, avian influenza viruses even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto avian influenza viruses through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of an avian influenza virus of interest.

Abstract: Disclosed herein are a method and a device for sensing sugars, using terahertz electromagnetic waves. By the method, even a trace amount of sugars in a liquid state can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, sugars even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto sugars through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of a sugar of interest.

Abstract: Disclosed herein are a method and device for sensing pesticide residues, using terahertz electromagnetic waves. By the method, even a trace amount of pesticide residues on objects such as fruits can be accurately discriminated and sensed, with high sensitivity and selectivity, using a sensing chip that works in a terahertz electromagnetic wave band. Using the method, pesticide residues even at low concentrations can be accurately analyzed with high sensitivity and selectivity in which terahertz electromagnetic waves are irradiated onto pesticide residues through a sensing chip having a meta unit in which a pattern is formed to amplify a frequency corresponding to an absorption frequency of a pesticide residue of interest.

Abstract: A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.

Abstract: Disclosed herein are a printed circuit board and a method for manufacturing the same. The printed circuit board includes: a base substrate having a metal pattern for a circuit; and a surface roughness provided on the metal pattern, wherein the surface roughness has a first surface roughness in an anchor structure and a second surface roughness having a black oxide layer in a granular structure formed on the first surface roughness.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

Abstract: An ion concentration measuring method and apparatus are provided. The ion concentration measuring apparatus includes an ion sensing layer in contact with a solution, a plurality of transistors having gate electrodes connected to the ion sensing layer, and a reading unit configured to change frequency information by using drain currents from the plurality of transistors and generate ion concentration information by using the frequency information.

Abstract: A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

Abstract: A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

Abstract: Provided is a cell sorting platform including a housing, a first electrode substrate extending inside the housing, and a second electrode substrate extending inside the housing and disposed parallel to the first electrode substrate with a predetermined gap, facing the first electrode substrate, wherein each electrode is formed at one side of the first electrode substrate and the second electrode substrate, and a plurality of electrode arrays is formed extending with an inclination from each of the electrodes, and a cell sorting method using the same.

Abstract: A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.

Abstract: A deposition source and an organic layer deposition apparatus that may be simply applied to the manufacture of large-sized display apparatuses on a mass scale and may prevent or substantially prevent deposition source nozzles from being blocked during deposition of a deposition material, thereby improving manufacturing yield and deposition efficiency. A deposition source includes a first deposition source including a plurality of first deposition source nozzles, and a second deposition source including a plurality of second deposition source nozzles wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other.

Abstract: A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.

Abstract: The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a duct including a suction fan therein; a UV LED lamp disposed in the air inlet portion of the duct and comprising a printed circuit board (PCB) that has a UV LED chip mounted thereon; and a trapping portion provided in the air outlet portion of the duct.

Abstract: The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a UV LED lamp disposed in an air inlet portion of the duct, and including a printed circuit board (PCB) that has a UV LED chip mounted thereon; an installing portion for installing the UV LED lamp on; and a trapping portion provided near the installing portion.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

Abstract: Disclosed herein are a printed circuit board and a method for manufacturing the same. The printed circuit board includes: a base substrate having a metal pattern for a circuit; and a surface roughness provided on the metal pattern, wherein the surface roughness has a first surface roughness in an anchor structure and a second surface roughness having a black oxide layer in a needle structure formed on the first surface roughness.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.