Abstract: A liquid crystal display (LCD) device and a manufacturing method thereof are provided. An alignment layer and a seal pattern are formed to overlap to reduce a width of a bezel, and one or more alignment layer spreading preventing means are formed to prevent a degradation of adhesive strength between the seal pattern and a substrate due to the characteristics of the alignment layer.

Abstract: Disclosed herein are a printed circuit board and a method for manufacturing the same. The printed circuit board includes: a base substrate having a metal pattern for a circuit; and a surface roughness provided on the metal pattern, wherein the surface roughness has a first surface roughness in an anchor structure and a second surface roughness having a black oxide layer in a needle structure formed on the first surface roughness.

Abstract: A display device including: an organic light emitting display unit formed on a first substrate, the organic light emitting display unit comprising first and second electrodes facing each other, and an organic emissive layer formed between the first and second electrodes; and a liquid crystal display unit formed on a second substrate facing the first substrate, the liquid crystal display unit configured to operate as a liquid crystal shutter in response to an electrical potential difference, wherein a resonance structure of the organic light emitting display unit enables the liquid crystal display unit to form an image in a color reflected from each pixel of the organic light emitting display unit.

Abstract: Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.

Abstract: In image processing, a color fringe is removed. The processing includes selecting a maximum gradient magnitude among gradient magnitudes for each of color components in an image, calculating a boundary of a dilated near-saturation region in the image, detecting a transition region in the image according to the maximum gradient magnitude and the dilated near-saturation region, and removing a color fringe from the transition region.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A method for fabricating a semiconductor device includes preparing a substrate in which a first active region and a second active region are defined by a device isolation region, forming a channel region in the first active region and the second active region, respectively, forming a gate insulating layer on the first active region and a gate insulating layer on the second active region, a thickness of the gate insulating layer on the first active region being different from a thickness of the gate insulating layer on the second active region, and forming a first interface layer between the substrate and the gate insulating layer on the first active region and a second interface layer between the substrate and the gate insulating layer on the second active region.

Abstract: An electrophotographic image forming apparatus including first and second developing devices to develop electrostatic latent images formed on first and second photosensitive bodies, each of the first and second developing devices comprise a first toner containing unit to contain a toner, the second developing device further including a second toner containing unit that is connected to the first toner containing unit by a connecting unit.

Abstract: A method of manufacturing an organic light-emitting display apparatus and an organic light-emitting display apparatus manufactured by using the method. A method of manufacturing an organic light-emitting display apparatus includes continuously depositing an organic layer of a linear pattern on a substrate; depositing a second electrode on the organic layer; and forming a passivation layer on the second electrode to cover the second electrode.

Abstract: Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.

Abstract: An exhaust manifold includes: an inlet portion which collects exhaust gas discharged through a first to a fourth exhaust ports; an outlet portion discharging the exhaust gas; and a tube portion connecting the inlet and the outlet portions. The inlet portion comprises: a first inlet portion one end of which communicates with the first and the second exhaust ports; and a second inlet portion one end of which communicates with the third and the fourth exhaust ports. Since the inlet portion is provided as two considering the combustion sequence, the productability and the economic feasibility can be enhanced, and the surrounding space can be enlarged to enhance the workability, and a simple exterior appearance can be obtained, and interference between exhaust gases can be effectively prevented, and since the size of the exhaust manifold can be increased, an engine load can be reduced to improve the fuel mileage.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

Abstract: An organic layer deposition apparatus and a method of manufacturing an organic light-emitting display device by using the apparatus. In particular, an organic layer deposition apparatus that is more easily manufactured and is suitable for use in mass production of large substrates while performing high-definition patterning thereon, as well as a method of manufacturing an organic light-emitting display device by using such an apparatus.

Abstract: A liquid crystal display (LCD) device and a manufacturing method thereof are provided. An alignment layer and a seal pattern are formed to overlap to reduce a width of a bezel, and one or more alignment layer spreading preventing means are formed to prevent a degradation of adhesive strength between the seal pattern and a substrate due to the characteristics of the alignment layer.

Abstract: An organic layer deposition apparatus for forming an organic layer on a substrate includes: a deposition source configured to discharge a deposition material; a deposition source nozzle unit arranged at a side of the deposition source and including a plurality of deposition source nozzles; and a patterning slit sheet facing the deposition source nozzle unit and including a plurality of patterning slits and at least one spacer arranged between a pair of adjacent patterning slits of the plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction, and the substrate is spaced apart from the organic layer deposition apparatus by a predetermined distance, and at least one of the substrate or the organic layer deposition apparatus is movable relative to the other.

Abstract: A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.

Abstract: An organic light emitting display apparatus in which image quality can be improved. The organic light emitting display apparatus includes: a substrate; a first electrode disposed on the substrate; a pixel definition layer formed on the first electrode and having an opening portion through which a region of the first electrode is exposed; an intermediate layer connected to the first electrode through the opening portion and including an organic emission layer; a second electrode electrically connected to the intermediate layer; and an inorganic planarization pattern portion disposed between the substrate and the first electrode and formed to at least correspond to the opening portion.

Abstract: An image forming apparatus having an improved configuration to prevent foreign substances from accumulating on a space maintaining member used to maintain a constant distance between a photoconductor and a developer delivery member. The image forming apparatus includes a photoconductor, a developer delivery member to deliver and feed developer to the photoconductor, a cleaning member to remove the developer and foreign substances remaining on a surface of the photoconductor while coming into contact with the photoconductor, and a space maintaining member arranged to come into contact with the photoconductor so as to maintain a constant developing gap or developing nip between the photoconductor and the developer delivery member. The space maintaining member is located between both ends of the cleaning member.