Abstract: A semiconductor device having a gate and a fabrication method therefor is disclosed, which can improve a thermal stability, has a low resistance, and assure an easy fabrication process. The fabrication method includes the steps of (1) forming a first insulating film and a conductive film on a semiconductor substrate, (2) patterning the first insulating film and a conductive film on a semiconductor substrate, (2) patterning the first insulating film and the conductive film, to form a gate, (3) forming a second insulating film thicker than the gate on an entire surface, (4) planarizing the second insulating film, to expose the gate, (5) depositing a refractory metal layer on an entire surface, (6 ) forming a silicide layer on an upper surface of the gate by heat treatment, and (7) etching the refractory metal layer and the second insulating film.

Abstract: Method for fabricating a polycide dual gate in a semiconductor device fabricates a dual gate having polycide gate electrodes. The polycide can be a cobalt polycide, for example. The method can include forming polysilicon pattern layers on a first and a second regions of a semiconductor substrate, forming a blocking layer to expose top surfaces of the polysilicon pattern layers and mask the substrate, and forming a metal layer on an entire surface and then is annealed to form a gate electrode having a stack of the polysilicon pattern layer under a silicide layer. Impurity ions of opposite conductivities in the first and second regions can be respectively deposited and diffused to form source/drain regions in surfaces of the substrate on both sides of the gate electrode. The implanted impurity ions can further implant ions in the silicide/polysilicon pattern layer gate to reduce fabrication steps or simplify the fabrication process.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a refractory metal film on a semiconductor substrate, forming a capping film on the refractory metal film, injecting IV group atoms into the capping film to knock atoms of the capping film into the refractory metal film, and forming a metal silicide film at an interface between the semiconductor substrate and the refractory metal film.

Abstract: The method of forming a polycide that includes the steps of forming an insulating layer on a substrate, forming a first semiconductor layer on the insulating layer and forming a metal-ion buried layer in the first semiconductor layer; wherein the metal-ion buried layer is formed to be located to a predetermined depth from an upper surface of the first semiconductor layer. An impurity-ion buried layer is formed under the metal-ion buried layer in the first semiconductor layer such that the impurity-ion buried layer makes the first conductive layer electrically-conductive. A silicide layer and a conductive second semiconductor layer are formed by carrying out thermal treatment on the metal-ion buried layer and the impurity-ion buried layer.

Abstract: The present invention relates to forming epitaxial Co self-align silicide for a semiconductor device. An epitaxial Co self-align suicide layer for a semiconductor device is formed by forming a buffer layer on a silicon substrate, depositing cobalt thereon and applying an annealing process thereto to restrain silicon and cobalt from radically reacting on each other when applying the annealing process after depositing cobalt on the silicon substrate. The buffer layer is formed by performing a surface treatment using CHF.sub.3 or O.sub.2 onto the silicon substrate, applying an ion implantation using carbon, fluorine or oxygen to the silicon substrate, or exposing the silicon substrate to oxygen plasma. The present invention has an effect of forming shallow junction for a scaling down process to improve the integration of the semiconductor device.