Abstract: A compound for an organic optoelectric device represented by Chemical Formula I, an organic optoelectric device including the same, and a display device are disclosed. Details of Chemical Formula I are defined in the specification.

Abstract: The present invention relates to a Myoviridae bacteriophage Esc-COP-4 that is isolated from the nature and can kill specifically enteroinvasive E. coli strains, which has a genome represented by the nucleotide sequence of SEQ. ID. NO: 1 (Accession NO: KCTC 12663BP), and a method for preventing and treating the infections of enteroinvasive E. coli using the composition comprising said bacteriophage as an active ingredient.

Abstract: Provided are a compound for an organic optoelectric device represented by Chemical Formula 1, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The structure of the compound for an organic optoelectric device represented by Chemical Formula 1 is described in the specification. The compound for an organic photoelectric device provides an organic light emitting diode having excellent electrochemical and thermal stability and improved life-span characteristics, and high luminous efficiency at a low driving voltage, and the compound for an organic photoelectric device may be appropriate for a solution process.

Abstract: The present invention relates to a compound for an organic optoelectronic element represented by Chemical Formula 1, an element comprising the same, and a display device comprising the organic optoelectronic element (details of Chemical Formula 1 are as described in the specification).

Abstract: The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.

Abstract: An organic compound represented by a combination of a moiety represented by the following Chemical Formula 1, a moiety represented by the following Chemical Formula 2, and a moiety represented by the following Chemical Formula 3,

Abstract: Provided herein is a patch antenna including a multilayered substrate on which a plurality of dielectric layers are laminated; at least one metal pattern layer disposed between the plurality of dielectric layers outside a central area of the multilayered substrate; an antenna patch disposed on an upper surface of the multilayered substrate and within the central area; a ground layer disposed on a lower surface of the multilayered substrate; a plurality of connection via patterns penetrating the plurality of dielectric layers to connect the metal pattern layer and the ground layer, and surrounding the central area; a transmission line comprising a first transmission line unit disposed on the upper surface of the multilayered substrate and located outside the central area, and a second transmission line unit disposed on the upper surface of the multilayered substrate and located within the central area; and an impedance transformer located below the second transmission line unit within the central area of the m

Abstract: A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through the first surface and the second surface, an active layer on the first surface, a cap layer on the active layer and including a gate recess region exposing a portion of the active layer, a source electrode and a drain electrode on one of the cap layer and the active layer, an insulating layer on the source electrode and the drain electrode and having on opening corresponding to the gate recess region to expose the gate recess region, a first field electrode on the insulating layer, a gate electrode electrically connected to the first field electrode on the insulating layer, and a second field electrode on the second surface and contacting the active layer through the via hole.

Abstract: Disclosed are an organic compound represented by the Chemical Formula 1, an organic optoelectric device including the organic compound, and a display device including the organic optoelectric device.

Abstract: Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

Abstract: Provided are a compound, a composition, a light emitting material including the same, an organic optoelectric device and a display device including the organic optoelectric device, and the compound is represented by the following Chemical Formula I, in the Chemical Formula I, X1 to X8, L and R1 to R5 are the same as defined in the specification.

Abstract: An organic compound represented by Chemical Formula 1, an organic optoelectric device including the organic compound, and a display device are disclosed.

Abstract: The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.

Abstract: A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a ?-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the ?-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.

Abstract: Embodiments relate to a compound represented by Formula 1, an organic optoelectronic diode comprising the same, and a display device comprising the organic optoelectronic diode. Formula 1 is as defined in the specification of the present invention.

Abstract: A compound for an organic optoelectronic device is represented by Chemical Formula 1: and, in Chemical Formula 1, one of Ar1 or Ar2 is a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, and the other of Ar1 or Ar2 is a substituent represented by the Chemical Formula 2:

Abstract: A compound for an organic optoelectric device, an organic optoelectric device including the same, and a display device including the organic optoelectric device, the compound including a combination of a moiety represented by the following Chemical Formula I and a moiety represented by the following Chemical Formula II:

Abstract: Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal.

Abstract: Disclosed are a luminescent material for an organic optoelectric device represented by Chemical Formula 1, an organic optoelectric device including the luminescent material for an organic optoelectric device, and a display device including the organic optoelectric device.

Abstract: In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).