Abstract: Provided herein is a component package including a matching unit and a matching method thereof, the matching unit including: a substrate; a transmission line formed on the substrate, the transmission line being connected to a terminal of the component package; a bonding wire electrically connecting the transmission line and a central component; and a capacitor unit having a plurality of capacitors electrically connected with the transmission line by wiring connection, wherein an inductance of the matching unit is variable by adjusting a length of the bonding wire, and a capacitance of the matching unit is variable by increasing or reducing the number of capacitors electrically connected to the transmission line, of among the capacitors inside the capacitor unit, by extending or cutting off the wiring connection.

Abstract: A compound for an organic optoelectronic device, an organic light-emitting device including the same, and a display device including the organic light-emitting device are disclosed, the compound for an organic optoelectronic device being represented by Chemical Formula 1,

Abstract: A compound for an organic photoelectric device, an organic photoelectric device including the same, and a display device including the organic photoelectric device, the compound being represented by the following Chemical Formula 1:

Abstract: Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 ?m or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.

Abstract: A compound for an organic photoelectric device, the compound being represented by Chemical Formula 1 or 2:

Abstract: A network emulator, a network system having the same, and a method for providing a simulated mobile communication network using the same is disclosed. The network emulator connects an external device and at least one wireless terminal and transfers data, stores data transfer environment for at least a target mobile communication network, and changes a data transfer environment to one of a first simulated mobile communication network transfer environment based on data transferred from the external device or a second simulated mobile communication network transfer environment based on data transferred from the mobile device.

Abstract: Disclosed are a field effect transistor for high voltage driving including a gate electrode structure in which a gate head extended in a direction of a drain is supported by a field plate embedded under a region of the gate head so as to achieve high voltage driving, and a manufacturing method thereof. Accordingly, the gate head extended in the direction of the drain is supported by the field plate electrically spaced by using an insulating layer, so that it is possible to stably manufacture a gate electrode including the extended gate head, and gate resistance is decreased by the gate head extended in the direction of the drain and an electric field peak value between the gate and the drain is decreased by the gate electrode including the gate head extended in the direction of the drain and the field plate proximate to the gate, thereby achieving an effect in that a breakdown voltage of a device is increased.

Abstract: Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %.hydroxide based on a total weight of the cleaning composition and deionized water.

Abstract: A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a ?-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the ?-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.

Abstract: A high frequency device includes: a capping layer formed on an epitaxial structure; source and drain electrodes formed on the capping layer; a multilayer insulating pattern formed on entire surfaces of the source and drain electrodes and the capping layer in a step shape; a T-shaped gate passing through the multilayer insulating pattern and the capping layer to be in contact with the epitaxial structure; and a passivation layer formed along entire surfaces of the T-shaped gate and the multilayer insulating pattern.

Abstract: Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded.

Abstract: A compound for an organic photoelectric device and an organic photoelectric device including the same, the compound being represented by the following Chemical Formula 1:

Abstract: Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.

Abstract: The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.

Abstract: A compound for an organic optoelectric device, an organic optoelectric device including the same, and a display device including the organic optoelectric device, the compound including a combination of a moiety represented by the following Chemical Formula I and a moiety represented by the following Chemical Formula II:

Abstract: A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed and the compound for an organic optoelectronic device represented by the following Chemical Formula 1 or 2 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.

Abstract: An organic compound represented by a combination of a moiety represented by the following Chemical Formula 1, a moiety represented by the following Chemical Formula 2, and a moiety represented by the following Chemical Formula 3,

Abstract: A composition includes a first host compound including moieties represented by Chemical Formulae 1 to 3 that are sequentially bonded with each other, and a second host compound including at least one carbazole group with a substituent having hole characteristics,

Abstract: Disclosed are a compound for an organic optoelectric device, an organic optoelectric device including the same and a display device including the organic optoelectric device, wherein the compound for an organic optoelectric device is represented by the following Chemical Formula 1, In the above Chemical Formula 1, R1 to R7, X, L1 and L2 are the same as described in the detailed description.

Abstract: A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode. The second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode to be in contact with the third insulating layer. The first insulating layer and another portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode to be in contact with the second insulating layer.