Patents by Inventor Dong-Mo Im
Dong-Mo Im has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230343801Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.Type: ApplicationFiled: February 8, 2023Publication date: October 26, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Ju Hee LEE, Dong Mo IM, Ji Hee YANG, Tae-Hun LEE, Ji-Hun LIM
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Patent number: 11594577Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: GrantFiled: November 5, 2021Date of Patent: February 28, 2023Inventors: Gwi-Deok Ryan Lee, Jung Hun Kim, Chang Hwa Kim, Sang Su Park, Sang Hoon Uhm, Beom Suk Lee, Tae Yon Lee, Dong Mo Im
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Patent number: 11335732Abstract: Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.Type: GrantFiled: December 9, 2019Date of Patent: May 17, 2022Inventors: Kwang-min Lee, Kyoung-won Na, Dong-mo Im, Jung-wook Lim, Seok-jin Kwon
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Publication number: 20220149088Abstract: An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.Type: ApplicationFiled: July 23, 2021Publication date: May 12, 2022Inventors: Dong Mo IM, Ja Meyung KIM, Jong Eun PARK, Beom Suk LEE, Kwan Sik CHO
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Patent number: 11284028Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.Type: GrantFiled: November 17, 2020Date of Patent: March 22, 2022Inventors: Tae-Yon Lee, Gwi-Deok Ryan Lee, Masaru Ishii, Dong-Mo Im
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Publication number: 20220059621Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: ApplicationFiled: November 5, 2021Publication date: February 24, 2022Inventors: Gwi-Deok Ryan LEE, Jung Hun KIM, Chang Hwa KIM, Sang Su PARK, Sang Hoon UHM, Beom Suk LEE, Tae Yon LEE, Dong Mo IM
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Patent number: 11177322Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: GrantFiled: October 22, 2019Date of Patent: November 16, 2021Inventors: Gwi-Deok Ryan Lee, Jung Hun Kim, Chang Hwa Kim, Sang Su Park, Sang Hoon Uhm, Beom Suk Lee, Tae Yon Lee, Dong Mo Im
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Patent number: 11101327Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: GrantFiled: March 25, 2020Date of Patent: August 24, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Mo Im, Gwi-Deok Lee, Tae-Yon Lee, Masaru Ishii
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Publication number: 20210075985Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.Type: ApplicationFiled: November 17, 2020Publication date: March 11, 2021Inventors: TAE-YON LEE, GWI-DEOK RYAN LEE, MASARU ISHII, DONG-MO IM
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Patent number: 10879286Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.Type: GrantFiled: August 27, 2019Date of Patent: December 29, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Mo Im, Seung Sik Kim, Ji Yoon Kim, Dae Hoon Kim, Min Woong Seo
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Patent number: 10868988Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.Type: GrantFiled: January 4, 2019Date of Patent: December 15, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Yon Lee, Gwi-Deok Ryan Lee, Masaru Ishii, Dong-Mo Im
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Publication number: 20200251512Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.Type: ApplicationFiled: August 27, 2019Publication date: August 6, 2020Inventors: Dong Mo IM, Seung Sik KIM, Ji Yoon KIM, Dae Hoon KIM, Min Woong SEO
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Publication number: 20200227482Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: ApplicationFiled: March 25, 2020Publication date: July 16, 2020Inventors: Dong-Mo IM, Gwi-Deok LEE, Tae-Yon LEE, Masaru ISHII
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Publication number: 20200111841Abstract: Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.Type: ApplicationFiled: December 9, 2019Publication date: April 9, 2020Inventors: Kwang-min Lee, Kyoung-won Na, Dong-mo Im, Jung-wook Lim, Seok-jin Kwon
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Patent number: 10615228Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: GrantFiled: August 21, 2018Date of Patent: April 7, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Mo Im, Gwi-Deok Lee, Tae-Yon Lee, Masaru Ishii
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Publication number: 20200052041Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: ApplicationFiled: October 22, 2019Publication date: February 13, 2020Inventors: Gwi-Deok Ryan LEE, Jung Hun KIM, Chang Hwa KIM, Sang Su PARK, Sang Hoon UHM, Beom Suk LEE, Tae Yon LEE, Dong Mo IM
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Patent number: 10535715Abstract: Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.Type: GrantFiled: February 4, 2019Date of Patent: January 14, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-min Lee, Kyoung-won Na, Dong-mo Im, Jung-wook Lim, Seok-jin Kwon
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Patent number: 10497754Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: GrantFiled: January 11, 2019Date of Patent: December 3, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gwi-Deok Ryan Lee, Jung Hun Kim, Chang Hwa Kim, Sang Su Park, Sang Hoon Uhm, Beom Suk Lee, Tae Yon Lee, Dong Mo Im
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Publication number: 20190260952Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.Type: ApplicationFiled: January 4, 2019Publication date: August 22, 2019Inventors: TAE-YON LEE, Gwi-Deok Ryan Lee, Masaru Ishii, Dong-Mo Im
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Publication number: 20190181183Abstract: Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.Type: ApplicationFiled: February 4, 2019Publication date: June 13, 2019Inventors: Kwang-min Lee, Kyoung-won Na, Dong-mo Im, Jung-wook Lim, Seok-jin Kwon