Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: Provided is an organic light emitting device which includes a light emitting layer between an anode and a cathode, the light emitting layer comprising a compound of Chemical Formula 1 and a compound of Chemical Formula 2: where A?1 represents Chemical Formula 2-a, the dotted line is fused with an adjacent ring, Ar?1 is substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S, D is deuterium, and the other substituents are as defined in the specification. The organic light emitting device has excellent driving voltage, efficiency and lifespan when the compound of Chemical Formula 1 and the compound of Chemical Formula 2 are combined and used as a host for a red light emitting layer.

Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.

Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.

Abstract: Provided is an organic light emitting device having improved driving voltage, efficiency and lifetime, the device comprising: an anode; a cathode; and a light emitting layer therebetween, wherein the light emitting layer comprises a compound of Chemical Formula 1 and a compound of Chemical Formula 2: wherein: any one of R?1 to R?12 is Chemical Formula 3, and the rest are hydrogen or deuterium: R1 is hydrogen, deuterium, or a substituted or unsubstituted C6-30 aryl or C2-60 heteroaryl containing one or more of N, O and S; Ar1, Ar2, Ar?1, and Ar?2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing one or more of N, O and S; and the other substituents are as defined in the specification.

Abstract: Provided is an organic light emitting device comprising an anode; a cathode; and a light emitting layer therebetween, the light emitting layer comprising a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency and lifetime: wherein: any one of R?1 to R?12 is Chemical Formula 3, and the rest are hydrogen or deuterium: Ar1, Ar2, Ar?1, and Ar?2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing any one or more of N, O and S; R1 is hydrogen, deuterium, or a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing any one or more of N, O and S; and the other substituents are as defined in the specification.

Abstract: Provided is an organic light-emitting device having improved driving voltage, efficiency and lifespan, the device comprising an anode, a cathode, and a light emitting layer including a light emitting layer that includes a compound of Chemical Formula 1 and a compound of Chemical Formula 2 between the anode and the cathode: where Ar1 and Ar2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; R1 is each independently hydrogen or deuterium; R2 to R6 and R9 to R11 are each independently hydrogen or deuterium; one of R7 and R8 is ?and the other is hydrogen or deuterium; Ar3 and Ar4 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; and the other substituents are as defined in the specification.

Abstract: A method includes providing packets to demodulate a modulated photon signal output from a light source, wherein each packet includes a first interval and a second interval, and providing oscillation signals respectively having different phases from one another to photogates during the first interval of each of the packets. The light source is disabled and a direct current (DC) voltage is provided to the photogates during the second interval of each of the packets.

Abstract: A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.

Abstract: A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.

Abstract: A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate adjacent to the gate insulation layer. At least a portion of the single crystalline silicon layer defines a channel region that extends in a direction substantially perpendicular to the surface of the substrate. The variable resistance layer is provided on the single crystalline silicon layer. The variable resistance layer is electrically insulated from the gate electrode. Related devices and fabrication methods are also discussed.

Abstract: Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.

Abstract: A phase change memory device includes a switching device, a phase change storage node connected to the switching device, and a gate electrode which is spaced apart from the phase change storage node and increases an electrical resistance of the storage node during a reset programming operation. The gate electrode may be disposed around the phase change storage node, and may be used for applying an electric field to the phase change storage node.

Abstract: A system for measuring a resistance of a memory cell in a resistive memory device can include a pulse generator configured to apply a data write pulse and a resistance read pulse to the resistive memory device with a delay time. A connecting member can be connected between the pulse generator and the resistive memory device. A test measurement device can be connected to the resistive memory device outputting a pulse waveform and a data-processing member can be configured to determine the resistance of the resistive memory device using the pulse waveform and an internal resistance of the test measurement device.

Abstract: A thermal image sensor including a chalcogenide material, and a method of fabricating the thermal image sensor are provided. The thermal image sensor includes a first metal layer formed on a substrate; a cavity exiting the first metal layer adapted for absorbing infrared rays; a bolometer resistor formed on the cavity and including a chalcogenide material; and a second metal layer formed on the bolometer resistor. The thermal image sensor includes a first metal layer formed on a substrate; an insulating layer formed on the first metal layer; a bolometer resistor formed on the insulating layer, including a chalcogenide material and having a thickness corresponding to ¼ of an infrared wavelength (?); the thermal image sensor further includes a second metal layer formed on the bolometer resistor.

Abstract: A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.

Abstract: A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse.

Abstract: A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above.

Abstract: In some embodiments, the present invention is directed to processes for the combination of injecting charge in a material electrochemically via non-faradaic (double-layer) charging, and retaining this charge and associated desirable properties changes when the electrolyte is removed. The present invention is also directed to compositions and applications using material property changes that are induced electrochemically by double-layer charging and retained during subsequent electrolyte removal. In some embodiments, the present invention provides reversible processes for electrochemically injecting charge into material that is not in direct contact with an electrolyte. Additionally, in some embodiments, the present invention is directed to devices and other material applications that use properties changes resulting from reversible electrochemical charge injection in the absence of an electrolyte.

Abstract: A phase change random access memory device is disclosed including a first electrode, a second electrode, a phase change material layer between the first and second electrode, a plurality of gate layers formed along the phase change material layer, an insulating film between the phase change material layer and the plurality of gate layers, and a plurality of interlayer insulating layers between the plurality of gate layers and between the first and second electrode and the plurality of gate layers, in which multiple bits of information may be stored in a single memory cell corresponding to the positions of the plurality of gate layers.