Abstract: A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n++ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.

Abstract: A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n+ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.

Abstract: A textured semiconductor wafer for a solar cell includes a plurality of grooves being formed on a surface of the semiconductor wafer. The grooves are formed in the step of depositing a protector in the form of islands on the surface by spray process or screen-printing process, dipping the wafer into an isotropic etching solution to etch a portion of the surface where the protector is not deposited, and removing the protector.

Abstract: A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rear contact electrode formed on a rear surface of the pn structure. The front contact electrode is reduced in its width as it goes away from a terminal.

Abstract: A self-biased solar cell and a module adopting the solar cell. The self-biased solar cell includes a semiconductor substrate of first conductivity type, a semiconductor layer of second conductivity type disposed adjacent to the first surface of the semiconductor substrate, at least one more first electrodes formed adjacent to the semiconductor layer; at least one more dielectric layers formed on the second surface of the semiconductor substrate, at least one or more second electodes formed on the second surface of the semiconductor substrate, the second electodes being disposed adjacent to the dielectric layers, and at least one or more voltage applying electrode formed on the dielectric layers. Therefore, recombination loss of the carriers according to the formation of a back surface field is comparatively decreased, and open voltage and quantum efficiency at a long wavelength are increased.