Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A sealing glass composition for providing a glass seal in an electrochemical cell is presented. The sealing glass composition includes boron oxide, aluminum oxide, barium oxide, and zirconium oxide, and the glass composition is substantially free of silicon oxide and titanium oxide. The electrochemical cell incorporating the glass seal is also provided.

Abstract: A sealing glass composition for providing a glass seal in an electrochemical cell is presented. The sealing glass composition includes boron oxide, aluminum oxide, barium oxide, and zirconium oxide, and the glass composition is substantially free of silicon oxide and titanium oxide. The electrochemical cell incorporating the glass seal is also provided.

Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Abstract: A seal structure is provided for an energy storage device. The seal structure includes a first sealing glass composition and a second sealing glass composition joining an ion-conducting first ceramic to an electrically insulating second ceramic. The first sealing glass composition includes less than or equal to about 20 weight percent silica based on the weight of the first sealing glass composition. The second sealing glass composition includes greater than or equal to about 40 weight percent silica based on the weight of the second sealing glass composition. A method for making the seal structure is provided. An article comprising the seal structure is also provided.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A sealing glass for an energy storage device is provided. The sealing glass includes silicon dioxide, boron oxide, aluminum oxide, sodium oxide and zirconium oxide. Methods for preparing the sealing glass and the energy storage device incorporating the sealing glass are also provided.

Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride.

Abstract: A seal structure is provided for an energy storage device. The seal structure includes a sealing glass joining an ion-conducting first ceramic to an electrically insulating second ceramic. The sealing glass has a composition that includes about 48 weight percent silica, about 20 weight percent to about 25 weight percent boria, about 20 weight percent to about 24 weight percent alumina, and about 8 weight percent to about 12 weight percent sodium oxide based on the total weight of the sealing glass composition. A method for making the seal structure is provided. An article comprising the seal structure is also provided.

Abstract: A metalized ceramic comprising a ceramic substrate comprising a first ceramic and a ceramic metallization layer disposed on the ceramic substrate. The ceramic metallization layer comprises a mixture of (i) a second ceramic and (ii) a metal comprising nickel or a refractory metal. The refractory metal may consist one or more of molybdenum, tungsten, niobium and tantalum. The first ceramic and the second ceramic have a purity of greater than about 95 percent. A method of making the metalized ceramic is provided. An electrochemical cell including the metalized ceramic is also provided.

Abstract: A seal structure is provided for an energy storage device. The seal structure includes a sealing glass joining an ion-conducting first ceramic to an electrically insulating second ceramic, wherein the ion-conducting first ceramic has an anode surface defining an anode compartment and a cathode surface defining a cathode compartment, wherein the sealing glass has an exposed portion, wherein the exposed portion is open to one or more of the anode compartment and the cathode compartment, wherein the exposed portion of the sealing glass is coated with a coating composition comprising one or more of boria, alumina, titania, zirconia, yttria, and ceria. Methods for forming the seal structure and article made therefrom are also provided.

Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. An apparatus for preparing a metal nitride is provided. The apparatus may include a housing having an interior surface that defines a chamber and an energy source to supply energy to the chamber. A first inlet may be provided to flow a nitrogen-containing gas into the chamber. Raw materials may be introduced into the chamber through a raw material inlet. A second inlet may be provided to flow in a halide-containing gas in the chamber. The apparatus may further include a controller, which communicates with the various components of the apparatus such as, sensors, valves, and energy source, and may optimize and control the reaction.

Abstract: A method of making a metal nitride is provided. The method may include introducing a metal in a chamber. A nitrogen-containing material may be flowed into the chamber. Further, a hydrogen halide may be introduced. The nitrogen-containing material may react with the metal in the chamber to form the metal nitride.

Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.

Abstract: A seal structure is provided for an energy storage device. The seal structure includes a first sealing glass composition and a second sealing glass composition joining an ion-conducting first ceramic to an electrically insulating second ceramic. The first sealing glass composition includes less than or equal to about 20 weight percent silica based on the weight of the first sealing glass composition. The second sealing glass composition includes greater than or equal to about 40 weight percent silica based on the weight of the second sealing glass composition. A method for making the seal structure is provided. An article comprising the seal structure is also provided.