Abstract: A method of making a light emitting diode includes forming a plurality of electrically conductive members at intervals on a first surface of an epitaxial layer which generates light so that the electrically conductive members are in ohmic contact with the epitaxial layer, forming a light incident layer on the first surface at regions where none of the electrically conductive members are formed, forming a light reflecting layer on the light incident layer and the electrically conductive members, providing an adhesive on the light reflecting layer, and bonding a permanent substrate to the light reflecting layer through the adhesive and through a wafer bonding process.

Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 ?m rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Abstract: An LED light emitter with heat sink holder and a method for manufacturing it are both disclosed. The LED light emitter with heat sink holder includes a heat sink holder and at least an LED chip. The heat sink holder is made of high thermal conductivity coefficient, and includes a reflecting mirror having a central portion and a reflecting portion surrounding the central portion. A normal of a top surface of the reflecting portion forms an acute angle relative to a normal of a top surface of the central portion. The LED chip is unitarily connected with a top surface of the central portion, and an electrode unit connecting with and Ohmic contacting the light emitting film for supplying power for the light emitting film. The LED light emitter with heat sink holder improves heat dissipation and working duration.

Abstract: A light emitting device includes: a light-enhancing layered structure of a hexagonal crystal system, the light-enhancing layered structure including a light-enhancing layer having a planar surface that is formed with a plurality of light-enhancing units thereon, each of the light-enhancing units extending in a normal direction relative to the planar surface, being tapered from the planar surface, and having three inclined faces that are adjoined side-by-side and that are respectively parallel to corresponding symmetrical ones of the crystal planes {11 2 k} of the hexagonal crystal system, where k=2 to 5; and a light emitting layered structure formed on the light-enhancing layered structure.

Abstract: This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Abstract: A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the second primary wavelength range differing from the first primary wavelength range; and a semiconductor photon-recycling member associated with the first LED in such a manner to convert a portion of the first primary light into a secondary light in a secondary wavelength range through photon-recycling mechanism and to permit the remainder of the first primary light to pass therethrough. The secondary wavelength range is different from the first and second primary wavelength ranges, thereby enabling the light emitting device to emit a multiple-chromatic light.

Abstract: A method for making a light emitting device includes: (a) preparing a chip-mounting board having a conductive surface; (b) mounting a plurality of vertical-feedthrough-LED chips on the conductive surface of the chip-mounting board; (c) forming a photoresist layer that cooperates with the chip-mounting board to enclose the vertical-feedthrough-LED chips; (d) patterning the photoresist layer by photolithography techniques to form a plurality of holes in the photoresist layer in such a manner that each of the holes exposes an electrode of a respective one of the vertical-feedthrough-LED chips; and (e) forming a conductive layer that covers the patterned photoresist layer and the vertical-feedthrough-LED chips.

Abstract: A flexible light emitting module includes: a flexible substrate; and a flexible multi-layer structure formed on the flexible substrate, and including a plurality of light emitting bare chips that are disposed on the same level and that cooperatively define a spacing thereamong, a dielectric material that fills the spacing and that cooperates with the bare chips to form a light emitting layer, and first and second conductive layers sandwiching and adapted to connect the light emitting layer to a power source.

Abstract: A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the patterned surface of the substrate, and formed with a plurality of protrusions that protrude from the patterned surface of the epitaxial layer and that are respectively received in the cavities. Each of the protrusions is polygonal in shape and defines a plurality of vertices. The vertices of each of the protrusions contact the cavity-defining wall of the respective one of the cavities so as to form a plurality of closed pores between each of the protrusions and the cavity-defining wall of the respective one of the cavities.

Abstract: A semiconductor structure includes: a base layer formed with an array of recesses; a first epitaxial layer stacked on the base layer and extending into the recesses in the base layer; a patterned mask layer stacked on the first epitaxial layer; and a second epitaxial layer having a first portion that corresponds to the recesses in the base layer and that extends through the mask layer to contact the first epitaxial layer, and a second portion that is stacked on the mask layer.

Abstract: A light emitting device includes: a substrate; a current diffusion layer; and a light emitting structure sandwiched between the substrate and the current diffusion layer, and including a plurality of light emitting protrusions extending between the substrate and the current diffusion layer, a plurality of interconnected spaces disposed among and separating the light emitting protrusions from each other, and a dielectric material filling the spaces. Each of the light emitting protrusions includes first and second cladding layers and a light-emitting active layer sandwiched between the first and second cladding layers.

Abstract: A light emitting device includes: a light-enhancing layered structure of a hexagonal crystal system, the light-enhancing layered structure including a light-enhancing layer having a planar surface that is formed with a plurality of light-enhancing units thereon, each of the light-enhancing units extending in a normal direction relative to the planar surface, being tapered from the planar surface, and having three inclined faces that are adjoined side-by-side and that are respectively parallel to corresponding symmetrical ones of the crystal planes {11 2 k} of the hexagonal crystal system, where k=2 to 5; and a light emitting layered structure formed on the light-enhancing layered structure.

Abstract: A method for manufacturing a light emitting device includes forming an epitaxial layer on a substrate, forming first and second electrodes that are electrically coupled to said epitaxial layer, forming a transparent layer on the epitaxial layer, forming particles of a mask material that are randomly scattered on a surface of the transparent layer, etching and texturing the surface of the transparent layer so as to form dents, that are scattered among the particles of the mask material, in the textured surface of the transparent layer, and removing the particles of the mask material from the textured surface of the transparent layer.

Abstract: A method for manufacturing a light emitting device includes: preparing a light emitting diode including an epitaxial substrate, an n-type cladding layer, an active layer, a p-type cladding layer, and first and second electrodes; thinning the epitaxial substrate; and forming a reflecting layer and a heat dissipating substrate on the thinned epitaxial substrate. A light emitting device manufactured from the above method is also disclosed.

Abstract: A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the second primary wavelength range differing from the first primary wavelength range; and a semiconductor photon-recycling member associated with the first LED in such a manner to convert a portion of the first primary light into a secondary light in a secondary wavelength range through photon-recycling mechanism and to permit the remainder of the first primary light to pass therethrough. The secondary wavelength range is different from the first and second primary wavelength ranges, thereby enabling the light emitting device to emit a multiple-chromatic light.

Abstract: A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the patterned surface of the substrate, and formed with a plurality of protrusions that protrude from the patterned surface of the epitaxial layer and that are respectively received in the cavities. Each of the protrusions is polygonal in shape and defines a plurality of vertices. The vertices of each of the protrusions contact the cavity-defining wall of the respective one of the cavities so as to form a plurality of closed pores between each of the protrusions and the cavity-defining wall of the respective one of the cavities.

Abstract: A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a laser-transmissive substrate and a laser-dissociable layer formed on the laser-transmissive substrate, (b) attaching the laser-dissociable layer of the temporary element to the epitaxial layer of the semiconductor element through a adhesive layer, (c) thinning the crystalline substrate, (d) applying a laser beam to the temporary element so as to dissociate the laser-dissociable layer of the temporary element, and removing the temporary element from the adhesive layer, and (e) removing the adhesive layer from the epitaxial layer of the semiconductor element.

Abstract: A manufacturing method of monolithic integrated thermal bubble inkjet print heads and the structure for the same. The method utilizes semiconductor manufacturing technologies to configure various elements in a thermal bubble inkjet print head, such as ink channels, an ink slot, an energy transducer, an orifice plate, on a single substrate. The ink channels are formed on an top surface of the substrate using the anisotropic etching technique. The ink slot is formed on a back surface of the substrate using the anisotropic etching technique. The energy transducer and the orifice plate are formed in order above the ink channels using the coating and etching techniques. This thermal bubble inkjet print head manufacturing method is particularly useful in the all batch process without employing the steps of precision alignment joint for the orifice plate in a conventional inkjet print head. Therefore, the method can greatly increase production efficiency and lower production costs.

Abstract: A manufacturing method of monolithic integrated thermal bubble inkjet print heads and the structure for the same. The method utilizes semiconductor manufacturing technologies to configure various elements in a thermal bubble inkjet print head, such as ink channels, an ink slot, an energy transducer, an orifice plate, on a single substrate. The ink channels are formed on an top surface of the substrate using the anisotropic etching technique. The ink slot is formed on a back surface of the substrate using the anisotropic etching technique. The energy transducer and the orifice plate are formed in order above the ink channels using the coating and etching techniques. This thermal bubble inkjet print head manufacturing method is particularly useful in the all batch process without employing the steps of precision alignment joint for the orifice plate in a conventional inkjet print head. Therefore, the method can greatly increase production efficiency and lower production costs.

Abstract: A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a metal-coated reflective permanent substrate and then removing the temporary substrate. The reflective metal layer also serves as a bonding agent for bonding the permanent substrate. The bonded LED element and permanent substrate are heated in a wafer bonding tool that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the bonded structure during the heating process to assist the bonding of the permanent substrate.