Abstract: A junction-breakdown protection semiconductor device provides a well region which prevents the junction between a metal conductor and a diffused region from breakdown even under a high voltage or high current input. The junction-breakdown protection semiconductor device includes a metal conductor to which a high voltage is applied a semiconductor region of high impurity concentration having a conductivity type which is opposite to the conductivity type of the substrate is connected to the metal conductor through an opening in an insulating film. A second semiconductor region of the same conductivity type as the first semiconductor region is formed deeper in junction depth than the first semiconductor region under the opening in the insulator for ohmic connection on the surface of the first semiconductor region.

Abstract: A sense amplifier and high performance DRAM, in combination, has in the DRAM at least one row of memory cells, whereby the memory cells of the row may be arranged in respective columns with memory cells of other rows. Each of the memory cells has a transistor and a capacitor connected serially between one of bit lines successively along the row and a fixed voltage source. Word lines are respectively connected to gates of the transistors of the memory cells for activating the memory cell selectively according to row address. The sense amplifier has a cross-coupled bistable flip-flop connecting the bit lines to each other in the row. A latch transistor connected to the flip-flop detects and amplifies a voltage difference between the bit lines. The bit lines are equalized and precharged with a reference voltage in response to a clock control signal. A cross-coupled pair of transistors also connecting the bit lines to each other transfer a charging voltage to the bit lines.