Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

Abstract: A forming capacitor method performing two steps of thermal treatment processes for preventing to generate a residual product having low permittivity at an interface between a dielectric and a bottom-electrode is disclosed. The method includes the steps of forming a bottom-electrode of a substrate, forming a dielectric on the bottom-electrode, performing a first thermal treatment process for crystallizing he dielectric, performing a second thermal treatment process for supplying oxygen to the dielectric and forming an upper-electrode on the dielectric. The above-mentioned processes of the present invention can restrain to produce the oxide having low permittivity, therefore a reliability of capacitor and electrical characteristics would be increased and improved.

Abstract: A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

Abstract: A semiconductor devices includes: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and oxygen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.