Abstract: Provided is a method of fabricating a mold, the method including: forming a first preliminary layer and a second preliminary layer, which are spaced apart from each other and stacked on a substrate; forming a first pattern by patterning the first preliminary layer; forming a first spacer on both sidewalls of the first pattern; forming a second pattern by etching the second preliminary layer by using the first spacer as an etching mask; forming a multilayer structure including the first pattern and the second pattern on the substrate by removing the first spacer; and forming a mold layer covering the multilayer structure.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided is a thermoelectric device. The thermoelectric device includes a substrate; first and second electrodes disposed at one side of the substrate, wherein the first and second electrodes are apart from each other; a common electrode formed on the other side of the substrate, wherein the common electrode is separated from the first and second electrodes; first and second legs connecting the common electrode to the first electrode, and the common electrode to the second electrode, respectively; and first and second barrier patterns covering the first and second legs and the substrate between the common electrode and the first electrode and between the common electrode and the second electrode, wherein the first and second barrier patterns prevents the short between the first and second legs and the common electrode and between the first and second legs and the first and second electrodes.

Abstract: Provided are a thermoelectric conductivity measurement instrument of a thermoelectric device and a measuring method of the same. The thermoelectric conductivity measurement instrument of the thermoelectric device includes a sample piece fixing module configured to provide an environment for measuring physical properties of the thermoelectric device as a sample piece and comprising an electrode part configured to provide contact points which are respectively in contact with both ends of the sample piece, and a measuring circuit module configured to provide a source AC voltage of a first frequency heating the sample piece to the electrode part, detect a first thermoelectric AC voltage of a second frequency greater than the first frequency and a second thermoelectric AC voltage of a third frequency greater than the second frequency, which are generated by a temperature change occurring at the contact points, and then obtain the thermoelectric conductivity.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided is an apparatus for measuring a thermoelectric device. The apparatus includes a high temperature heater controlling a temperature of a first side of a sample, a low temperature heater controlling a temperature of a second side of the sample, a fine control heater controlling the temperature of the first side of the sample by a smaller unit than the high temperature heater, a temperature control and voltage measuring unit controlling the high temperature heater, the low temperature heater, and the fine control heater and measuring voltages of the first and second sides of the sample, and a thermal conductivity measuring unit measuring thermal conductivity of the sample by using a high temperature output voltage generated in the first side of the sample and a low temperature output voltage generated in the second side of the sample.

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract: Provided is a terahertz health checker. The terahertz health checker includes a terahertz wave transmitter generating terahertz waves in a terahertz band, a lens outputting the terahertz waves and receiving terahertz waves reflected from the outputted terahertz waves, an imaging chip connected to the lens, detecting the received terahertz waves, and generating a digital image signal based on the detected terahertz waves, a readout circuit reading out the digital image signal, and a transceiver outputting the read-out digital image signal to the outside.

Abstract: A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

Abstract: Provided is a sensing device having a multi beam antenna array. The sensing device includes an antenna array including a plurality of antennas, a plurality of low noise amplifiers respectively connected to the antennas to amplify radio frequency signals received from the respective antennas, a delay line box including a plurality of delay lines, each delay line delaying the signals amplified by the low noise amplifiers for a predetermined time, and a detector detecting the output signals of the delay ling box.

Abstract: A sensing device may include an antenna. The antenna may include a top wafer and a bottom wafer coupled to the top wafer. The antenna may further include an air cavity between the top wafer and the bottom wafer. The sensing device may further include a substrate and an interposer disposed between the antenna and the substrate.

Abstract: A device characteristics measurement method using an all-optoelectronic terahertz photomixing system includes: calculating power of an antenna of a transmitter by adding a matching condition between output impedance of the photomixer and input impedance of the antenna of the transmitter to power of the photomixer of the transmitter; calculating power of an antenna of a receiver based on the power of the antenna of the transmitter; and outputting the power of the antenna of the transmitter and the power of the antenna of the receiver so as to analyze device characteristics of the photomixer and the antenna of the transmitter.

Abstract: A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract: Provided is a method for fabricating a device package. The method includes: preparing a substrate where respectively corresponding device structures and input and output pads are disposed on an active surface; preparing a carrier substrate where a metal lid corresponding to the device structure is disposed on one surface; and contacting the active surface of the substrate with the metal lid of the carrier substrate to cover and seal the device structure corresponding to the metal lid.

Abstract: Provided is a package structure. The package structure includes a first substrate, a first device, a second substrate, a first via contact, and at least one second device. The first device is formed on the first substrate. The second substrate has an air gap over the first substrate and covers the first device. The first via contact is connected to the first device through the second substrate. At least one second device is electrically connected to the first via contact, and is stacked on the second substrate.

Abstract: Provided is a sensing device having a multi beam antenna array. The sensing device includes an antenna array including a plurality of antennas, a plurality of low noise amplifiers respectively connected to the antennas to amplify radio frequency signals received from the respective antennas, a delay line box including a plurality of delay lines, each delay line delaying the signals amplified by the low noise amplifiers for a predetermined time, and a detector detecting the output signals of the delay ling box.

Abstract: Provided is a microstrip patch antenna. The microstrip patch antenna includes a dielectric layer, a feed circuit disposed in the dielectric layer, at least one slot disposed in the dielectric layer and vertically spaced apart from the feed circuit, and a patch antenna disposed outside the dielectric layer and vertically spaced apart from the at least one slot.

Abstract: Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor.